Inventor · disambiguated record
Mitchell Taylor
Also filed as: TAYLOR MITCHELL · TAYLOR MITCHELL C
23 granted patents·10 pending applications·971 citations·filing 1996–2024
96Inventor score
Top patents by PatentIndex Score
33 records- 0197US5908313AMethod of forming a transistorINTEL CORP·Filed 1996·Granted Jun 1, 1999·297 cites·16 claims
- 0293US7314804B2Plasma implantation of impurities in junction region recessesINTEL CORP·Filed 2005·Granted Jan 1, 2008·21 cites·18 claims
- 0393US6121100AMethod of fabricating a MOS transistor with a raised source/drain extensionINTEL CORP·Filed 1997·Granted Sep 19, 2000·147 cites·12 claims
- 0492US7052978B2Arrangements incorporating laser-induced cleavingINTEL CORP·Filed 2003·Granted May 30, 2006·75 cites·38 claims
- 0591US6590271B2Extension of shallow trench isolation by ion implantationINTEL CORP·Filed 2001·Granted Jul 8, 2003·63 cites·25 claims
- 0691US5932882AIon implanter with post mass selection decelerationAPPLIED MATERIALS INC·Filed 1996·Granted Aug 3, 1999·75 cites·44 claims
- 0789US6432798B1Extension of shallow trench isolation by ion implantationINTEL CORP·Filed 2000·Granted Aug 13, 2002·53 cites·25 claims
- 0887US6198142B1Transistor with minimal junction capacitance and method of fabricationINTEL CORP·Filed 1998·Granted Mar 6, 2001·85 cites·9 claims
- 0986US6638802B1Forming strained source drain junction field effect transistorsINTEL CORP·Filed 2002·Granted Oct 28, 2003·35 cites·18 claims
- 1082US7211501B2Method and apparatus for laser annealingINTEL CORP·Filed 2002·Granted May 1, 2007·25 cites·19 claims
- 1181US7439113B2Forming dual metal complementary metal oxide semiconductor integrated circuitsINTEL CORP·Filed 2004·Granted Oct 21, 2008·23 cites·7 claims
- 1271US7015108B2Implanting carbon to form P-type drain extensionsINTEL CORP·Filed 2004·Granted Mar 21, 2006·14 cites·5 claims
- 1370US6794755B2Surface alteration of metal interconnect in integrated circuits for electromigration and adhesion improvementINTEL CORP·Filed 2003·Granted Sep 21, 2004·11 cites·6 claims
- 1468US6200883B1Ion implantation methodAPPLIED MATERIALS INC·Filed 1997·Granted Mar 13, 2001·33 cites·18 claims
- 1567US6936518B2Creating shallow junction transistorsINTEL CORP·Filed 2004·Granted Aug 30, 2005·8 cites·14 claims
- 1665US7235843B2Implanting carbon to form P-type source drain extensionsINTEL CORP·Filed 2006·Granted Jun 26, 2007·2 cites·2 claims
- 1763US8999798B2Methods for forming NMOS EPI layersTAYLOR MITCHELL C·Filed 2010·Granted Apr 7, 2015·2 cites·18 claims
- 1860US12212631B2Subscription management and web-based activity tracking in a computing environmentPushnami LLC·Filed 2023·Granted Jan 28, 2025·0 cites·21 claims
- 1954US7671358B2Plasma implantated impurities in junction region recessesINTEL CORP·Filed 2007·Granted Mar 2, 2010·0 cites·24 claims
- 2053US11677848B2Subscription management and web-based activity tracking in a computing environmentPushnami LLC·Filed 2021·Granted Jun 13, 2023·0 cites·20 claims
- 2152US12284257B2Systems and methods for delivery of content in association with notification messagesPushnami LLC·Filed 2023·Granted Apr 22, 2025·0 cites·18 claims
- 2251US2009142875A1Method of making an improved selective emitter for silicon solar cellsAPPLIED MATERIALS INC·Filed 2007·Application pending·0 cites
- 2350US12452188B2Systems and methods for managing message queuingPushnami LLC·Filed 2023·Granted Oct 21, 2025·0 cites·21 claims
- 2450US2024396911A1Systems and methods for detecting and preventing bot traffic in messaging systemsPushnami LLC·Filed 2024·Application pending·0 cites
- 2550US2009020825A1Forming dual metal complementary metal oxide semiconductor integrated circuitsDOCZY MARK·Filed 2008·Application pending·0 cites
- 2648US6911706B2Forming strained source drain junction field effect transistorsINTEL CORP·Filed 2003·Granted Jun 28, 2005·2 cites·5 claims
- 2748US2005191834A1Creating shallow junction transistorsFiled 2005·Application pending·0 cites
- 2847US2024146672A1System and method for dynamic signaling of online user activityPushnami LLC·Filed 2023·Application pending·0 cites
- 2940US2004056366A1A method of forming surface alteration of metal interconnect in integrated circuits for electromigration and adhesion improvementFiled 2002·Application pending·0 cites
- 3038US2008160683A1Source/drain extensions in nmos devicesVANDERPOOL AARON O·Filed 2006·Application pending·0 cites
- 3136US2004102013A1Codoping of source drains using carbon or fluorine ion implants to improve polysilicon depletionFiled 2002·Application pending·0 cites
- 3236US2002197885A1Method of making a semiconductor transistor by implanting ions into a gate dielectric layer thereofFiled 2001·Application pending·0 cites
- 3336US2002086502A1Method of forming a doped region in a semiconductor materialFiled 2000·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →