Inventor · disambiguated record
Zheng Xu
Also filed as: XU ZHENG · XU ZHENG-HUA
142 granted patents·43 pending applications·4,353 citations·filing 1994–2024
99Inventor score
Files withAPPLIED MATERIALS INC87SOLARCITY CORP20UNIV ZHEJIANG15SILEVO INC13HON HAI PREC IND CO LTD9
Top patents by PatentIndex Score
185 records- 0198US6413382B1Pulsed sputtering with a small rotating magnetronAPPLIED MATERIALS INC·Filed 2000·Granted Jul 2, 2002·171 cites·27 claims
- 0298US6277249B1Integrated process for copper via filling using a magnetron and target producing highly energetic ionsAPPLIED MATERIALS INC·Filed 2000·Granted Aug 21, 2001·273 cites·27 claims
- 0398US6274008B1Integrated process for copper via fillingAPPLIED MATERIALS INC·Filed 2000·Granted Aug 14, 2001·231 cites·19 claims
- 0498US6217721B1Filling narrow apertures and forming interconnects with a metal utilizing a crystallographically oriented liner layerAPPLIED MATERIALS INC·Filed 1996·Granted Apr 17, 2001·206 cites·59 claims
- 0597US9412884B2Module fabrication of solar cells with low resistivity electrodesSILEVO INC·Filed 2014·Granted Aug 9, 2016·41 cites·20 claims
- 0697US9343595B2Photovoltaic devices with electroplated metal gridsSOLARCITY CORP·Filed 2015·Granted May 17, 2016·26 cites·12 claims
- 0797US7253109B2Method of depositing a tantalum nitride/tantalum diffusion barrier layer systemAPPLIED MATERIALS INC·Filed 2005·Granted Aug 7, 2007·44 cites·67 claims
- 0897US6919275B2Method of preventing diffusion of copper through a tantalum-comprising barrier layerAPPLIED MATERIALS INC·Filed 2004·Granted Jul 19, 2005·87 cites·4 claims
- 0997US6451177B1Vault shaped target and magnetron operable in two sputtering modesAPPLIED MATERIALS INC·Filed 2000·Granted Sep 17, 2002·103 cites·26 claims
- 1096US9899554B2Method of installing a strain relief apparatus to a solar cellSOLARCITY CORP·Filed 2015·Granted Feb 20, 2018·23 cites·14 claims
- 1196US6051114AUse of pulsed-DC wafer bias for filling vias/trenches with metal in HDP physical vapor depositionAPPLIED MATERIALS INC·Filed 1997·Granted Apr 18, 2000·304 cites·20 claims
- 1296US5962923ASemiconductor device having a low thermal budget metal filling and planarization of contacts, vias and trenchesAPPLIED MATERIALS INC·Filed 1995·Granted Oct 5, 1999·142 cites·31 claims
- 1395US8686283B2Solar cell with oxide tunneling junctionsHENG JIUNN BENJAMIN·Filed 2010·Granted Apr 1, 2014·32 cites·37 claims
- 1494US6991709B2Multi-step magnetron sputtering processAPPLIED MATERIALS INC·Filed 2004·Granted Jan 31, 2006·46 cites·24 claims
- 1594US6787006B2Operating a magnetron sputter reactor in two modesAPPLIED MATERIALS INC·Filed 2002·Granted Sep 7, 2004·53 cites·31 claims
- 1694US6758947B2Damage-free sculptured coating depositionAPPLIED MATERIALS INC·Filed 2001·Granted Jul 6, 2004·47 cites·29 claims
- 1794US5763851ASlotted RF coil shield for plasma deposition systemAPPLIED MATERIALS INC·Filed 1996·Granted Jun 9, 1998·93 cites·64 claims
- 1893US9219174B2Module fabrication of solar cells with low resistivity electrodesSILEVO INC·Filed 2014·Granted Dec 22, 2015·11 cites·14 claims
- 1993US7048837B2End point detection for sputtering and resputteringAPPLIED MATERIALS INC·Filed 2003·Granted May 23, 2006·68 cites·26 claims
- 2093US6190513B1Darkspace shield for improved RF transmission in inductively coupled plasma sources for sputter depositionAPPLIED MATERIALS INC·Filed 1997·Granted Feb 20, 2001·90 cites·28 claims
- 2193US5736021AElectrically floating shield in a plasma reactorAPPLIED MATERIALS INC·Filed 1996·Granted Apr 7, 1998·91 cites·20 claims
- 2292US8668816B2Self-ionized and inductively-coupled plasma for sputtering and resputteringDING PEIJUN·Filed 2007·Granted Mar 11, 2014·19 cites·16 claims
- 2392US7381639B2Method of depositing a metal seed layer on semiconductor substratesAPPLIED MATERIALS INC·Filed 2006·Granted Jun 3, 2008·10 cites·13 claims
- 2492US6485618B2Integrated copper fill processAPPLIED MATERIALS INC·Filed 2001·Granted Nov 26, 2002·47 cites·26 claims
- 2591US9390970B2Method for depositing a diffusion barrier layer and a metal conductive layerCHIANG TONY·Filed 2007·Granted Jul 12, 2016·10 cites·69 claims
- 2691US6692617B1Sustained self-sputtering reactor having an increased density plasmaAPPLIED MATERIALS INC·Filed 1997·Granted Feb 17, 2004·79 cites·25 claims
- 2790US7074714B2Method of depositing a metal seed layer on semiconductor substratesAPPLIED MATERIALS INC·Filed 2004·Granted Jul 11, 2006·26 cites·3 claims
- 2890US6610184B2Magnet array in conjunction with rotating magnetron for plasma sputteringAPPLIED MATERIALS INC·Filed 2001·Granted Aug 26, 2003·44 cites·15 claims
- 2990US5902461AApparatus and method for enhancing uniformity of a metal film formed on a substrate with the aid of an inductively coupled plasmaAPPLIED MATERIALS INC·Filed 1997·Granted May 11, 1999·88 cites·39 claims
- 3089US7948771B2Electrical component and method for making the sameHON HAI PREC IND CO LTD·Filed 2008·Granted May 24, 2011·19 cites·11 claims
- 3189US6368469B1Coils for generating a plasma and for sputteringAPPLIED MATERIALS INC·Filed 1997·Granted Apr 9, 2002·48 cites·54 claims
- 3289US6080285AMultiple step ionized metal plasma deposition process for conformal step coverageAPPLIED MATERIALS INC·Filed 1998·Granted Jun 27, 2000·124 cites·32 claims
- 3388US11641109B2Grid-forming wind turbine control method for diode rectifier unit-based offshore wind power transmission systemUNIV ZHEJIANG·Filed 2022·Granted May 2, 2023·2 cites·8 claims
- 3488US6672864B2Method and apparatus for processing substrates in a system having high and low pressure areasAPPLIED MATERIALS INC·Filed 2002·Granted Jan 6, 2004·36 cites·20 claims
- 3588US6254746B1Recessed coil for generating a plasmaAPPLIED MATERIALS INC·Filed 1997·Granted Jul 3, 2001·47 cites·60 claims
- 3688US6238528B1Plasma density modulator for improved plasma density uniformity and thickness uniformity in an ionized metal plasma sourceAPPLIED MATERIALS INC·Filed 1998·Granted May 29, 2001·55 cites·30 claims
- 3787US9214576B2Transparent conducting oxide for photovoltaic devicesFU JIANMING·Filed 2011·Granted Dec 15, 2015·4 cites·18 claims
- 3887US7510441B2Electrical connector having improved based elementHON HAI PREC IND CO LTD·Filed 2008·Granted Mar 31, 2009·28 cites·11 claims
- 3987US6783639B2Coils for generating a plasma and for sputteringAPPLIED MATERIALS INC·Filed 2002·Granted Aug 31, 2004·21 cites·32 claims
- 4087US6136095AApparatus for filling apertures in a film layer on a semiconductor substrateAPPLIED MATERIALS INC·Filed 1997·Granted Oct 24, 2000·52 cites·10 claims
- 4187US6045666AAluminum hole filling method using ionized metal adhesion layerAPPLIED MATERIALS INC·Filed 1997·Granted Apr 4, 2000·61 cites·31 claims
- 4286US10047430B2Self-ionized and inductively-coupled plasma for sputtering and resputteringAPPLIED MATERIALS INC·Filed 2014·Granted Aug 14, 2018·5 cites·22 claims
- 4385US9773928B2Solar cell with electroplated metal gridFU JIANMING·Filed 2011·Granted Sep 26, 2017·5 cites·13 claims
- 4485US8398832B2Coils for generating a plasma and for sputteringNULMAN JAIM·Filed 2005·Granted Mar 19, 2013·10 cites·25 claims
- 4585US7485004B2Electrical connector having improved electrical elementHON HAI PREC IND CO LTD·Filed 2008·Granted Feb 3, 2009·25 cites·14 claims
- 4685US6399479B1Processes to improve electroplating fillAPPLIED MATERIALS INC·Filed 1999·Granted Jun 4, 2002·74 cites·20 claims
- 4784US7294574B2Sputter deposition and etching of metallization seed layer for overhang and sidewall improvementAPPLIED MATERIALS INC·Filed 2004·Granted Nov 13, 2007·36 cites·40 claims
- 4884US6875321B2Auxiliary magnet array in conjunction with magnetron sputteringAPPLIED MATERIALS INC·Filed 2003·Granted Apr 5, 2005·26 cites·20 claims
- 4984US6514390B1Method to eliminate coil sputtering in an ICP sourceAPPLIED MATERIALS INC·Filed 1996·Granted Feb 4, 2003·42 cites·21 claims
- 5084US5780357ADeposition process for coating or filling re-entry shaped contact holesAPPLIED MATERIALS INC·Filed 1997·Granted Jul 14, 1998·65 cites·16 claims
Showing the top 50 of 185 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →