Inventor · disambiguated record
Ingo Daumiller
Also filed as: DAUMILLER INGO
9 granted patents·3 pending applications·22 citations·filing 2001–2024
82Inventor score
Top patents by PatentIndex Score
12 records- 0185US11289593B2Breakdown resistant HEMT substrate and deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2015·Granted Mar 29, 2022·4 cites·12 claims
- 0265US2022173235A1Breakdown Resistant HEMT Substrate and DeviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2022·Application pending·0 cites
- 0364US2025072033A1Type iii-v semiconductor device with multi-layer barrier regionINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2024·Application pending·0 cites
- 0460US7939994B2Micromechanical actuators comprising semiconductors on a group III nitride basisMICROGAN GMBH·Filed 2007·Granted May 10, 2011·3 cites·53 claims
- 0557US7394112B2Heterostructure with rear-face donor dopingMICROGAN GMBH·Filed 2006·Granted Jul 1, 2008·2 cites·23 claims
- 0656US7352008B2Heterostructure with rear-face donor dopingMICROGAN GMBH·Filed 2001·Granted Apr 1, 2008·9 cites·20 claims
- 0752US12183816B2Type III-V semiconductor device with multi-layer barrier regionINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2021·Granted Dec 31, 2024·0 cites·20 claims
- 0852US11557670B2Type III-V semiconductor device with improved leakageINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2021·Granted Jan 17, 2023·0 cites·15 claims
- 0949US8698319B2Electronic componentFIX RICHARD·Filed 2009·Granted Apr 15, 2014·0 cites·9 claims
- 1043US7504658B2Sensor elements with cantilevered bar structures made of semiconductors based on group III-nitrideKUNZE MIKE·Filed 2004·Granted Mar 17, 2009·4 cites·53 claims
- 1130US8748944B2Electric circuit with vertical contactsDAUMILLER INGO·Filed 2008·Granted Jun 10, 2014·0 cites·27 claims
- 1227US2012038058A1Vertically contacted electronic component and method for producing sameDAUMILLER INGO·Filed 2010·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →