Inventor · disambiguated record
Bernhard Ecker
Also filed as: ECKER BERNHARD
7 granted patents·15 pending applications·6 citations·filing 2018–2025
74Inventor score
Top patents by PatentIndex Score
22 records- 0192US11236438B2Silicon carbide substrate and method of growing SiC single crystal boulesSICRYSTAL GMBH·Filed 2018·Granted Feb 1, 2022·4 cites·5 claims
- 0273US11781245B2Silicon carbide substrate and method of growing SiC single crystal boulesSICRYSTAL GMBH·Filed 2021·Granted Oct 10, 2023·0 cites·6 claims
- 0369US11041254B2Chamfered silicon carbide substrate and method of chamferingSICRYSTAL GMBH·Filed 2019·Granted Jun 22, 2021·1 cites·18 claims
- 0467US2025198046A1Crucible for producing a sic volume mono crystal and a method for growing a sic volume mono crystalSICRYSTAL GMBH·Filed 2024·Application pending·0 cites
- 0566US11624124B2Silicon carbide substrate and method of growing SiC single crystal boulesSICRYSTAL GMBH·Filed 2018·Granted Apr 11, 2023·1 cites·4 claims
- 0664US12460314B2Silicon carbide substrate and method of growing SiC single crystal boulesSICRYSTAL GMBH·Filed 2023·Granted Nov 4, 2025·0 cites·15 claims
- 0764US2024263347A1System for manufacturing a high-quality semiconductor single crystal, and method of manufacturing sameSICRYSTAL GMBH·Filed 2024·Application pending·0 cites
- 0864US2024263346A1System for manufacturing a high-quality semiconductor single crystal, and method of manufacturing sameSICRYSTAL GMBH·Filed 2024·Application pending·0 cites
- 0964US2024309546A1Sublimation System And Method Of Growing At Least One Single CrystalSICRYSTAL GMBH·Filed 2024·Application pending·0 cites
- 1064US2024318352A1Method and apparatus for the thermal post-treatment of at least one sic volume monocrystalSICRYSTAL GMBH·Filed 2024·Application pending·0 cites
- 1164US2024309545A1Sublimation System and Method of Growing at Least One Single Crystal of a Semiconductor MaterialSICRYSTAL GMBH·Filed 2024·Application pending·0 cites
- 1263US2025198048A1Arrangement for growing a sic volume monocrystal and growing methodSICRYSTAL GMBH·Filed 2024·Application pending·0 cites
- 1362US2024003054A1Production method for an sic volume monocrystal of inhomogeneous screw dislocation distribution and sic substrateSICRYSTAL GMBH·Filed 2023·Application pending·0 cites
- 1462US2023416939A1Production method for an sic volume monocrystal of homogeneous screw dislocation distribution and sic substrateSICRYSTAL GMBH·Filed 2023·Application pending·0 cites
- 1560US2024392471A1Method for Producing a Bulk SiC Single Crystal with Improved Quality Using a SiC Seed Crystal with a Temporary Protective Oxide Layer, and SiC Seed Crystal with Protective Oxide LayerSICRYSTAL GMBH·Filed 2023·Application pending·0 cites
- 1656US2025283247A1Seed unit and apparatus for growing a bulk sic single crystalSICRYSTAL GMBH·Filed 2025·Application pending·0 cites
- 1752US2025313990A1Layered Substrate, Method of Fabrication of a Layered Substrate and Method for Growing an Epitaxial Layer with the Layered SubstrateSICRYSTAL GMBH·Filed 2025·Application pending·0 cites
- 1852US2025313987A1Layered Seed, Method of Fabrication of a Layered Seed and Method for Growing a Volume Mono Crystal with the Layered SeedSICRYSTAL GMBH·Filed 2025·Application pending·0 cites
- 1952US2025313988A1Multilayer Seed for Single-Crystal Growth, Method of Producing a Multilayer Seed, Use of the Multilayer Seed in a PVT Process for Growing a Single-Crystal and PVT Process Using the SameSICRYSTAL GMBH·Filed 2025·Application pending·0 cites
- 2052US2025283246A1Production method for a bulk sic single crystalSICRYSTAL GMBH·Filed 2025·Application pending·0 cites
- 2142US11261536B2Production method and growth arrangement for producing a bulk SiC single crystal by arranging at least two insulation cylinder components to control a variation in a volume element densitySI CRYSTAL GMBH·Filed 2020·Granted Mar 1, 2022·0 cites·21 claims
- 2240US11515140B2Chamfered silicon carbide substrate and method of chamferingSICRYSTAL GMBH·Filed 2019·Granted Nov 29, 2022·0 cites·6 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →