Assignee
SICRYSTAL GMBH
DE·10 granted patents·18 pending applications·6 citations·filing 2018–2025
Top patents by PatentIndex Score
28 records- 0192US11236438B2Silicon carbide substrate and method of growing SiC single crystal boulesSICRYSTAL GMBH·Filed 2018·Granted Feb 1, 2022·4 cites·5 claims
- 0276US12157955B2Method for simultaneously manufacturing more than one single crystal of a semiconductor material by physical vapor transportSICRYSTAL GMBH·Filed 2022·Granted Dec 3, 2024·0 cites·15 claims
- 0373US11781245B2Silicon carbide substrate and method of growing SiC single crystal boulesSICRYSTAL GMBH·Filed 2021·Granted Oct 10, 2023·0 cites·6 claims
- 0469US11041254B2Chamfered silicon carbide substrate and method of chamferingSICRYSTAL GMBH·Filed 2019·Granted Jun 22, 2021·1 cites·18 claims
- 0567US2025198046A1Crucible for producing a sic volume mono crystal and a method for growing a sic volume mono crystalSICRYSTAL GMBH·Filed 2024·Application pending·0 cites
- 0666US11624124B2Silicon carbide substrate and method of growing SiC single crystal boulesSICRYSTAL GMBH·Filed 2018·Granted Apr 11, 2023·1 cites·4 claims
- 0765US11560643B2System for efficient manufacturing of a plurality of high-quality semiconductor single crystals by physical vapor transportSICRYSTAL GMBH·Filed 2020·Granted Jan 24, 2023·0 cites·12 claims
- 0864US12460314B2Silicon carbide substrate and method of growing SiC single crystal boulesSICRYSTAL GMBH·Filed 2023·Granted Nov 4, 2025·0 cites·15 claims
- 0964US2024263347A1System for manufacturing a high-quality semiconductor single crystal, and method of manufacturing sameSICRYSTAL GMBH·Filed 2024·Application pending·0 cites
- 1064US2024263346A1System for manufacturing a high-quality semiconductor single crystal, and method of manufacturing sameSICRYSTAL GMBH·Filed 2024·Application pending·0 cites
- 1164US2024309546A1Sublimation System And Method Of Growing At Least One Single CrystalSICRYSTAL GMBH·Filed 2024·Application pending·0 cites
- 1264US2024318352A1Method and apparatus for the thermal post-treatment of at least one sic volume monocrystalSICRYSTAL GMBH·Filed 2024·Application pending·0 cites
- 1364US2024309545A1Sublimation System and Method of Growing at Least One Single Crystal of a Semiconductor MaterialSICRYSTAL GMBH·Filed 2024·Application pending·0 cites
- 1463US2025198048A1Arrangement for growing a sic volume monocrystal and growing methodSICRYSTAL GMBH·Filed 2024·Application pending·0 cites
- 1562US2024003054A1Production method for an sic volume monocrystal of inhomogeneous screw dislocation distribution and sic substrateSICRYSTAL GMBH·Filed 2023·Application pending·0 cites
- 1662US2023416939A1Production method for an sic volume monocrystal of homogeneous screw dislocation distribution and sic substrateSICRYSTAL GMBH·Filed 2023·Application pending·0 cites
- 1760US2024392471A1Method for Producing a Bulk SiC Single Crystal with Improved Quality Using a SiC Seed Crystal with a Temporary Protective Oxide Layer, and SiC Seed Crystal with Protective Oxide LayerSICRYSTAL GMBH·Filed 2023·Application pending·0 cites
- 1856US2025283247A1Seed unit and apparatus for growing a bulk sic single crystalSICRYSTAL GMBH·Filed 2025·Application pending·0 cites
- 1952US2025313990A1Layered Substrate, Method of Fabrication of a Layered Substrate and Method for Growing an Epitaxial Layer with the Layered SubstrateSICRYSTAL GMBH·Filed 2025·Application pending·0 cites
- 2052US2025313987A1Layered Seed, Method of Fabrication of a Layered Seed and Method for Growing a Volume Mono Crystal with the Layered SeedSICRYSTAL GMBH·Filed 2025·Application pending·0 cites
- 2152US2025313988A1Multilayer Seed for Single-Crystal Growth, Method of Producing a Multilayer Seed, Use of the Multilayer Seed in a PVT Process for Growing a Single-Crystal and PVT Process Using the SameSICRYSTAL GMBH·Filed 2025·Application pending·0 cites
- 2252US2023317780A1Monocrystalline SIC Substrates Having an Asymmetrical Geometry and Method of Producing SameSICRYSTAL GMBH·Filed 2022·Application pending·0 cites
- 2352US2025283246A1Production method for a bulk sic single crystalSICRYSTAL GMBH·Filed 2025·Application pending·0 cites
- 2448US11479875B2System for horizontal growth of high-quality semiconductor single crystals by physical vapor transportSICRYSTAL GMBH·Filed 2020·Granted Oct 25, 2022·0 cites·9 claims
- 2545US2023349071A1Crystal Structure Orientation in Semiconductor Semi-Finished Products and Semiconductor Substrates for Fissure Reduction and Method of Setting SameSICRYSTAL GMBH·Filed 2021·Application pending·0 cites
- 2641US12195878B2SiC crystals with an optimal orientation of lattice planes for fissure reduction and method of producing sameSICRYSTAL GMBH·Filed 2021·Granted Jan 14, 2025·0 cites·14 claims
- 2740US11515140B2Chamfered silicon carbide substrate and method of chamferingSICRYSTAL GMBH·Filed 2019·Granted Nov 29, 2022·0 cites·6 claims
- 2839US2022025545A1Sic crystalline substrates with an optimal orientation of lattice planes for fissure reduction and method of producing sameSICRYSTAL GMBH·Filed 2021·Application pending·0 cites
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