Inventor · disambiguated record
Keiji Horioka
Also filed as: HORIOKA KEIJI
50 granted patents·3 pending applications·3,627 citations·filing 1985–2011
99Inventor score
Files withTOSHIBA KK20TOKYO ELECTRON LTD15APPLIED MATERIALS INC14BENCHER CHRISTOPHER D1HOFFMAN DANIEL J1
Top patents by PatentIndex Score
53 records- 0199US7807578B2Frequency doubling using spacer maskAPPLIED MATERIALS INC·Filed 2007·Granted Oct 5, 2010·774 cites·10 claims
- 0298US7196283B2Plasma reactor overhead source power electrode with low arcing tendency, cylindrical gas outlets and shaped surfaceAPPLIED MATERIALS INC·Filed 2005·Granted Mar 27, 2007·118 cites·48 claims
- 0397US7575007B2Chamber recovery after opening barrier over copperAPPLIED MATERIALS INC·Filed 2006·Granted Aug 18, 2009·197 cites·19 claims
- 0497US5444207APlasma generating device and surface processing device and method for processing wafers in a uniform magnetic fieldTOSHIBA KK·Filed 1993·Granted Aug 22, 1995·132 cites·24 claims
- 0596US5429730AMethod of repairing defect of structureTOSHIBA KK·Filed 1993·Granted Jul 4, 1995·114 cites·54 claims
- 0695US5302240AMethod of manufacturing semiconductor deviceTOSHIBA KK·Filed 1993·Granted Apr 12, 1994·200 cites·22 claims
- 0795US4595601AMethod of selectively forming an insulation layerTOSHIBA KK·Filed 1985·Granted Jun 17, 1986·72 cites·20 claims
- 0894US8617351B2Plasma reactor with minimal D.C. coils for cusp, solenoid and mirror fields for plasma uniformity and device damage reductionHOFFMAN DANIEL J·Filed 2005·Granted Dec 31, 2013·26 cites·10 claims
- 0994US5627626AProjectin exposure apparatusTOSHIBA KK·Filed 1995·Granted May 6, 1997·102 cites·12 claims
- 1094US5621498AProjection exposure apparatusTOSHIBA KK·Filed 1995·Granted Apr 15, 1997·101 cites·5 claims
- 1193US5707501AFilter manufacturing apparatusTOSHIBA KK·Filed 1995·Granted Jan 13, 1998·81 cites·5 claims
- 1290US5356515ADry etching methodTOKYO ELECTRON LTD·Filed 1992·Granted Oct 18, 1994·139 cites·10 claims
- 1389US5660671AMagnetron plasma processing apparatus and processing methodTOKYO ELECTRON LTD·Filed 1994·Granted Aug 26, 1997·49 cites·5 claims
- 1489US5660744APlasma generating apparatus and surface processing apparatusTOSHIBA KK·Filed 1995·Granted Aug 26, 1997·65 cites·23 claims
- 1589US5290381APlasma etching apparatusTOKYO ELECTRON LTD·Filed 1991·Granted Mar 1, 1994·116 cites·16 claims
- 1688US5639699AFocused ion beam deposition using TMCTSTOSHIBA KK·Filed 1995·Granted Jun 17, 1997·62 cites·11 claims
- 1788US5298112AMethod for removing composite attached to material by dry etchingTOSHIBA KK·Filed 1992·Granted Mar 29, 1994·103 cites·36 claims
- 1887US7879186B2Method and apparatus for shaping a magnetic field in a magnetic field-enhanced plasma reactorAPPLIED MATERIALS INC·Filed 2008·Granted Feb 1, 2011·7 cites·8 claims
- 1987US5445710AMethod of manufacturing semiconductor deviceTOSHIBA KK·Filed 1994·Granted Aug 29, 1995·86 cites·18 claims
- 2087US5258332AMethod of manufacturing semiconductor devices including rounding of corner portions by etchingTOSHIBA KK·Filed 1993·Granted Nov 2, 1993·102 cites·26 claims
- 2185US6132551AInductive RF plasma reactor with overhead coil and conductive laminated RF window beneath the overhead coilAPPLIED MATERIALS INC·Filed 1997·Granted Oct 17, 2000·42 cites·54 claims
- 2284US5250137APlasma treating apparatusTOKYO ELECTRON LTD·Filed 1991·Granted Oct 5, 1993·87 cites·12 claims
- 2383US7972469B2Plasma processing apparatusAPPLIED MATERIALS INC·Filed 2007·Granted Jul 5, 2011·7 cites·23 claims
- 2483US7374636B2Method and apparatus for providing uniform plasma in a magnetic field enhanced plasma reactorAPPLIED MATERIALS INC·Filed 2002·Granted May 20, 2008·21 cites·16 claims
- 2581US6432318B1Dielectric etch process reducing striations and maintaining critical dimensionsAPPLIED MATERIALS INC·Filed 2000·Granted Aug 13, 2002·24 cites·16 claims
- 2681US5707487AMethod of manufacturing semiconductor deviceTOSHIBA KK·Filed 1994·Granted Jan 13, 1998·73 cites·20 claims
- 2781US5270266AMethod of adjusting the temperature of a semiconductor waferTOKYO ELECTRON LTD·Filed 1992·Granted Dec 14, 1993·75 cites·10 claims
- 2880US5717294APlasma process apparatusTOSHIBA KK·Filed 1995·Granted Feb 10, 1998·65 cites·10 claims
- 2980US5271788APlasma processing apparatusTOKYO ELECTRON LTD·Filed 1992·Granted Dec 21, 1993·38 cites·19 claims
- 3079US7422654B2Method and apparatus for shaping a magnetic field in a magnetic field-enhanced plasma reactorAPPLIED MATERIALS INC·Filed 2004·Granted Sep 9, 2008·11 cites·35 claims
- 3179US5234527ALiquid level detecting device and a processing apparatusTOKYO ELECTRON LTD·Filed 1991·Granted Aug 10, 1993·39 cites·18 claims
- 3276US5240554AMethod of manufacturing semiconductor deviceTOSHIBA KK·Filed 1992·Granted Aug 31, 1993·59 cites·23 claims
- 3375US5698070AMethod of etching film formed on semiconductor waferTOKYO ELECTRON LTD·Filed 1993·Granted Dec 16, 1997·56 cites·47 claims
- 3475US5259923ADry etching methodTOKYO ELECTRON LTD·Filed 1992·Granted Nov 9, 1993·61 cites·12 claims
- 3574US5310454ADry etching methodTOSHIBA KK·Filed 1993·Granted May 10, 1994·54 cites·9 claims
- 3672US5302236AMethod of etching object to be processed including oxide or nitride portionTOKYO ELECTRON LTD·Filed 1991·Granted Apr 12, 1994·50 cites·11 claims
- 3771US7316199B2Method and apparatus for controlling the magnetic field intensity in a plasma enhanced semiconductor wafer processing chamberAPPLIED MATERIALS INC·Filed 2002·Granted Jan 8, 2008·9 cites·11 claims
- 3870US6800213B2Precision dielectric etch using hexafluorobutadieneFiled 2002·Granted Oct 5, 2004·11 cites·22 claims
- 3969US5607599AMethod of processing a magnetic thin filmTOSHIBA KK·Filed 1995·Granted Mar 4, 1997·55 cites·18 claims
- 4065US5376211AMagnetron plasma processing apparatus and processing methodTOKYO ELECTRON LTD·Filed 1991·Granted Dec 27, 1994·14 cites·5 claims
- 4164US7846849B2Frequency tripling using spacer mask having interposed regionsAPPLIED MATERIALS INC·Filed 2007·Granted Dec 7, 2010·1 cites·20 claims
- 4263US5437961AMethod of manufacturing semiconductor deviceTOSHIBA KK·Filed 1994·Granted Aug 1, 1995·29 cites·18 claims
- 4361US5733713AMethod of manufacturing semiconductor deviceTOSHIBA KK·Filed 1995·Granted Mar 31, 1998·22 cites·18 claims
- 4459US5543252AMethod for manufacturing exposure mask and the exposure maskTOSHIBA KK·Filed 1994·Granted Aug 6, 1996·15 cites·55 claims
- 4556US6461533B1Etchant for silicon oxide and methodAPPLIED MATERIALS INC·Filed 1998·Granted Oct 8, 2002·20 cites·5 claims
- 4653US6261428B1Magnetron plasma process apparatusTOKYO ELECTRON LTD·Filed 1994·Granted Jul 17, 2001·10 cites·3 claims
- 4752US5320704APlasma etching apparatusTOKYO ELECTRON LTD·Filed 1991·Granted Jun 14, 1994·23 cites·19 claims
- 4850US5474643APlasma processing apparatusTOKYO ELECTRON LTD·Filed 1993·Granted Dec 12, 1995·10 cites·6 claims
- 4950US2008260966A1Plasma processing methodAPPLIED MATERIALS INC·Filed 2007·Application pending·0 cites
- 5048US8936696B2Method and apparatus for shaping a magnetic field in a magnetic field-enhanced plasma reactorLINDLEY ROGER ALAN·Filed 2011·Granted Jan 20, 2015·0 cites·20 claims
Showing the top 50 of 53 patent records by PatentIndex Score.
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