Inventor · disambiguated record
Cristian Cismaru
Also filed as: CISMARU CRISTIAN
7 granted patents·7 pending applications·15 citations·filing 2000–2025
79Inventor score
Top patents by PatentIndex Score
14 records- 0187US12113125B2Bipolar transistor having collector with doping concentration discontinuitySKYWORKS SOLUTIONS INC·Filed 2022·Granted Oct 8, 2024·1 cites·28 claims
- 0281US9461153B2Devices and methods related to a barrier for metallization of a gallium based semiconductorSKYWORKS SOLUTIONS INC·Filed 2012·Granted Oct 4, 2016·4 cites·20 claims
- 0380US10121780B2Devices related to barrier for metallization of gallium based semiconductorSKYWORKS SOLUTIONS INC·Filed 2016·Granted Nov 6, 2018·2 cites·21 claims
- 0479US2025081487A1Bipolar junction transistor with varying concentration of narrow bandgap material in base structureSKYWORKS SOLUTIONS INC·Filed 2024·Application pending·0 cites
- 0579US2025081488A1Bipolar junction transistor with narrow bandgap baseSKYWORKS SOLUTIONS INC·Filed 2024·Application pending·0 cites
- 0679US2025081555A1Bipolar junction transistor with narrow ledge between emitter and base contactSKYWORKS SOLUTIONS INC·Filed 2024·Application pending·0 cites
- 0779US2025081560A1Bipolar junction transistor with multi-layer base structure having narrow bandgap layerSKYWORKS SOLUTIONS INC·Filed 2024·Application pending·0 cites
- 0873US2025380477A1Bipolar transistor having collector with a retrograde doping profileSKYWORKS SOLUTIONS INC·Filed 2025·Application pending·0 cites
- 0964US12363931B2Bipolar transistor having collector with doping concentration gradingSKYWORKS SOLUTIONS INC·Filed 2022·Granted Jul 15, 2025·0 cites·24 claims
- 1062US9847407B2Devices and methods related to a gallium arsenide Schottky diode having low turn-on voltageSKYWORKS SOLUTIONS INC·Filed 2012·Granted Dec 19, 2017·1 cites·23 claims
- 1158US6440756B2Reduction of plasma charge-induced damage in microfabricated devicesWISCONSIN ALUMNI RES FOUND·Filed 2000·Granted Aug 27, 2002·7 cites·18 claims
- 1258US2020035816A1Semiconductor structure with gallium arsenide and tantalum nitrideSKYWORKS SOLUTIONS INC·Filed 2019·Application pending·0 cites
- 1357US10439051B2Methods related to a semiconductor structure with gallium arsenide and tantalum nitrideSKYWORKS SOLUTIONS INC·Filed 2017·Granted Oct 8, 2019·0 cites·20 claims
- 1456US2019123045A1Devices related to barrier for metallization of gallium based semiconductorSKYWORKS SOLUTIONS INC·Filed 2018·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →