Inventor · disambiguated record
Said Ghneim
Also filed as: GHNEIM SAID · GHNEIM SAID N
8 granted patents·2 pending applications·120 citations·filing 1995–2008
85Inventor score
Top patents by PatentIndex Score
10 records- 0183US5801076AMethod of making non-volatile memory device having a floating gate with enhanced charge retentionADVANCED MICRO DEVICES INC·Filed 1995·Granted Sep 1, 1998·67 cites·27 claims
- 0263US5795809ASemiconductor wafer fabrication process including gettering utilizing a combined oxidation techniqueADVANCED MICRO DEVICES INC·Filed 1995·Granted Aug 18, 1998·30 cites·10 claims
- 0358US7232744B2Method for implanting dopants within a substrate by tilting the substrate relative to the implant sourceTEXAS INSTRUMENTS INC·Filed 2004·Granted Jun 19, 2007·7 cites·20 claims
- 0454US7807978B2Divergent charged particle implantation for improved transistor symmetryTEXAS INSTRUMENTS INC·Filed 2008·Granted Oct 5, 2010·0 cites·10 claims
- 0552US2008142724A1Divergent Charged Particle Implantation for Improved Transistor SymmetryTEXAS INSTRUMENTS INC·Filed 2008·Application pending·0 cites
- 0649US7253072B2Implant optimization schemeTEXAS INSTRUMENTS INC·Filed 2004·Granted Aug 7, 2007·3 cites·22 claims
- 0748US5805013ANon-volatile memory device having a floating gate with enhanced charge retentionADVANCED MICRO DEVICES INC·Filed 1997·Granted Sep 8, 1998·13 cites·9 claims
- 0847US2007257211A1Implant Optimization SchemeTEXAS INSTRUMENTS INC·Filed 2007·Application pending·0 cites
- 0944US8138045B2Method of forming sidewall spacers to reduce formation of recesses in the substrate and increase dopant retention in a semiconductor deviceNANDAKUMAR MAHALINGAM·Filed 2008·Granted Mar 20, 2012·0 cites·8 claims
- 1043US7385202B2Divergent charged particle implantation for improved transistor symmetryTEXAS INSTRUMENTS INC·Filed 2004·Granted Jun 10, 2008·0 cites·5 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →