Implant Optimization Scheme

Abstract

The present invention provides a method for implanting ions in a substrate and a method for manufacturing an integrated circuit. The method for implanting ions in a substrate, among other steps, including placing a substrate ( 410 ) on an implant platen ( 405 ) such that a predominant axes ( 430 ) of the substrate ( 410 ) is rotated about 30 degrees to about 60 degrees or about 120 degrees to about 150 degrees offset from a radial with respect to the implant platen ( 405 ), and further wherein the substrate ( 410 ) is not tilted. The method further includes implanting ions into the substrate ( 410 ), the rotated position of the predominant axes ( 430 ) reducing shadowing.

1 . A method for implanting ions in a substrate, comprising: 
 placing a substrate on an implant platen such that predominant axes of the substrate are chordal with respect to the implant platen and implanting about ¼ of a desired amount of ions into the substrate;    rotating the substrate in a direction by about 90 degrees to a second position and implanting about another ¼ of the desired amount of ions into the substrate;    rotating the substrate located in the second position in the direction by about 90 degrees to a third position and implanting about another ¼ of the desired amount of ions into the substrate; and    rotating the substrate located in the third position in the direction by about 90 degrees to a fourth position and implanting a remaining amount of ions into the substrate.    
   
   
       2 . The method as recited in  claim 1  wherein placing a substrate includes placing a substrate such that one of the predominant axes is about 30 degrees to about 60 degrees or about 120 degrees to about 150 degrees offset from a radial with respect to the platen.  
   
   
       3 . The method as recited in  claim 1  wherein placing a substrate includes placing a substrate such that one of the predominant axes is about 45 degrees or about 135 degrees offset from a radial with respect to the platen.  
   
   
       4 . The method as recited in  claim 1  wherein the substrate is not tilted.