Inventor · disambiguated record
Joseph Xie
Also filed as: XIE JOSEPH · XIE JOSEPH Z · XIE JOSEPH ZHIFENG
8 granted patents·1 pending application·381 citations·filing 2000–2020
90Inventor score
Files withCHARTERED SEMICONDUCTOR MFG4INST OF MICROELECTRONICS3ICLEAGUE TECH CO LTD1RUDOLPH TECHNOLOGIES INC1
Top patents by PatentIndex Score
9 records- 0194US6424044B1Use of boron carbide as an etch-stop and barrier layer for copper dual damascene metallizationCHARTERED SEMICONDUCTOR MFG·Filed 2002·Granted Jul 23, 2002·99 cites·13 claims
- 0292US6472962B1Inductor-capacitor resonant RF switchINST OF MICROELECTRONICS·Filed 2001·Granted Oct 29, 2002·85 cites·30 claims
- 0391US6352921B1Use of boron carbide as an etch-stop and barrier layer for copper dual damascene metallizationCHARTERED SEMICONDUCTOR MFG·Filed 2000·Granted Mar 5, 2002·64 cites·20 claims
- 0485US6387798B1Method of etching trenches for metallization of integrated circuit devices with a narrower width than the design mask profileINST OF MICROELECTRONICS·Filed 2001·Granted May 14, 2002·63 cites·35 claims
- 0585US6242344B1Tri-layer resist method for dual damascene processINST OF MICROELECTRONICS·Filed 2000·Granted Jun 5, 2001·50 cites·28 claims
- 0669US6429129B1Method of using silicon rich carbide as a barrier material for fluorinated materialsCHARTERED SEMICONDUCTOR MFG·Filed 2000·Granted Aug 6, 2002·11 cites·21 claims
- 0760US6730591B2Method of using silicon rich carbide as a barrier material for fluorinated materialsCHARTERED SEMICONDUCTOR MFG·Filed 2002·Granted May 4, 2004·6 cites·27 claims
- 0847US7002689B2Optically-based method and apparatus for detecting and characterizing surface pits in a metal film during chemical mechanical polishRUDOLPH TECHNOLOGIES INC·Filed 2002·Granted Feb 21, 2006·3 cites·27 claims
- 0940US2020364547A1Chip including neural network processors and methods for manufacturing the sameICLEAGUE TECH CO LTD·Filed 2020·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →