Inventor · disambiguated record
Chien-Kuo Yang
Also filed as: YANG CHIEN-KUO
11 granted patents·2 pending applications·121 citations·filing 1999–2023
89Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD5LIANG VICTOR CHIANG2TAIWAN SEMICONDUCTOR MFG2UNITED MICROELECTRONICS CORP2TAIWAN SEMICONDUCTOR MFG COMANY LIMITED1
Top patents by PatentIndex Score
13 records- 0198US9389199B2Backside sensing bioFET with enhanced performanceTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jul 12, 2016·82 cites·17 claims
- 0295US9976982B2Backside sensing BioFET with enhanced performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 22, 2018·7 cites·20 claims
- 0385US10509008B2Biological device and biosensing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Dec 17, 2019·2 cites·26 claims
- 0482US11002704B2Biosensor devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG COMANY LIMITED·Filed 2016·Granted May 11, 2021·5 cites·20 claims
- 0577US8114752B2Structure of capacitor setLIANG VICTOR CHIANG·Filed 2010·Granted Feb 14, 2012·5 cites·20 claims
- 0673US2023375499A1Biological Device And Biosensing Method ThereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 0768US10184912B2Backside sensing BioFET with enhanced performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 22, 2019·0 cites·20 claims
- 0865US11828722B2Biological device and biosensing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 28, 2023·0 cites·20 claims
- 0960US8133792B2Method for reducing capacitance variation between capacitorsLIANG VICTOR-CHIANG·Filed 2006·Granted Mar 13, 2012·2 cites·26 claims
- 1057US9159741B2Structure and method for single gate non-volatile memory device having a capacitor well doping design with improved coupling efficiencyTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Oct 13, 2015·0 cites·20 claims
- 1155US6746883B2Direct determination of interface traps in MOS devicesUNITED MICROELECTRONICS CORP·Filed 2002·Granted Jun 8, 2004·7 cites·8 claims
- 1246US6204129B1Method for producing a high-voltage and low-voltage MOS transistor with salicide structureUNITED MICROELECTRONICS CORP·Filed 1999·Granted Mar 20, 2001·11 cites·22 claims
- 1333US2001020722A1Step-like silicon on isolation structureFiled 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →