Inventor · disambiguated record
Charles E. May
Also filed as: MAY CHARLES · MAY CHARLES E · MAY CHARLES ELIJAH · MAY CHARLES H
118 granted patents·7 pending applications·3,255 citations·filing 1974–2010
99Inventor score
Files withADVANCED MICRO DEVICES INC91LSI LOGIC CORP23NASA2ADVANCED MICRO SERVICES1ADVANCED MICRON DEVICES INC1
Top patents by PatentIndex Score
125 records- 0198US6225168B1Semiconductor device having metal gate electrode and titanium or tantalum nitride gate dielectric barrier layer and process of fabrication thereofADVANCED MICRO DEVICES INC·Filed 1998·Granted May 1, 2001·239 cites·20 claims
- 0295US6210999B1Method and test structure for low-temperature integration of high dielectric constant gate dielectrics into self-aligned semiconductor devicesADVANCED MICRO DEVICES INC·Filed 1998·Granted Apr 3, 2001·211 cites·28 claims
- 0392US6452412B1Drop-in test structure and methodology for characterizing an integrated circuit process flow and topographyADVANCED MICRO DEVICES INC·Filed 1999·Granted Sep 17, 2002·136 cites·8 claims
- 0492US6150222AMethod of making a high performance transistor with elevated spacer formation and self-aligned channel regionsADVANCED MICRO DEVICES INC·Filed 1999·Granted Nov 21, 2000·106 cites·39 claims
- 0591US6130012AIon beam milling to generate custom reticlesADVANCED MICRO DEVICES INC·Filed 1999·Granted Oct 10, 2000·80 cites·29 claims
- 0691US5963803AMethod of making N-channel and P-channel IGFETs with different gate thicknesses and spacer widthsADVANCED MICRO DEVICES INC·Filed 1998·Granted Oct 5, 1999·90 cites·33 claims
- 0790US6084280ATransistor having a metal silicide self-aligned to the gateADVANCED MICRO DEVICES INC·Filed 1998·Granted Jul 4, 2000·82 cites·41 claims
- 0889US6008095AProcess for formation of isolation trenches with high-K gate dielectricsADVANCED MICRO DEVICES INC·Filed 1998·Granted Dec 28, 1999·76 cites·30 claims
- 0988US5943585ATrench isolation structure having low K dielectric spacers arranged upon an oxide liner incorporated with nitrogenADVANCED MICRO DEVICES INC·Filed 1997·Granted Aug 24, 1999·92 cites·12 claims
- 1087US7358594B1Method of forming a low k polymer E-beam printable mechanical supportLSI LOGIC CORP·Filed 2005·Granted Apr 15, 2008·12 cites·9 claims
- 1187US6323519B1Ultrathin, nitrogen-containing MOSFET sidewall spacers using low-temperature semiconductor fabrication processADVANCED MICRO DEVICES INC·Filed 1998·Granted Nov 27, 2001·90 cites·4 claims
- 1287US6100173AForming a self-aligned silicide gate conductor to a greater thickness than junction silicide structures using a dual-salicidation processADVANCED MICRO DEVICES INC·Filed 1998·Granted Aug 8, 2000·68 cites·19 claims
- 1386US6410967B1Transistor having enhanced metal silicide and a self-aligned gate electrodeADVANCED MICRO DEVICES INC·Filed 1998·Granted Jun 25, 2002·76 cites·14 claims
- 1486US6067154AMethod and apparatus for the molecular identification of defects in semiconductor manufacturing using a radiation scattering technique such as raman spectroscopyADVANCED MICRO DEVICES INC·Filed 1998·Granted May 23, 2000·75 cites·15 claims
- 1584US6268637B1Method of making air gap isolation by making a lateral EPI bridge for low K isolation advanced CMOS fabricationADVANCED MICRO DEVICES INC·Filed 1998·Granted Jul 31, 2001·73 cites·21 claims
- 1684US6207485B1Integration of high K spacers for dual gate oxide channel fabrication techniqueADVANCED MICRO DEVICES INC·Filed 1998·Granted Mar 27, 2001·58 cites·8 claims
- 1784US6150708AAdvanced CMOS circuitry that utilizes both sides of a wafer surface for increased circuit densityADVANCED MICRO DEVICES INC·Filed 1998·Granted Nov 21, 2000·56 cites·26 claims
- 1883US6144071AUltrathin silicon nitride containing sidewall spacers for improved transistor performanceADVANCED MICRO DEVICES INC·Filed 1998·Granted Nov 7, 2000·54 cites·20 claims
- 1982US6274442B1Transistor having a nitrogen incorporated epitaxially grown gate dielectric and method of making sameADVANCED MICRO DEVICES INC·Filed 1998·Granted Aug 14, 2001·48 cites·5 claims
- 2079US6151119AApparatus and method for determining depth profile characteristics of a dopant material in a semiconductor deviceADVANCED MICRO DEVICES INC·Filed 1997·Granted Nov 21, 2000·67 cites·22 claims
- 2178US6127251ASemiconductor device with a reduced width gate dielectric and method of making sameADVANCED MICRO DEVICES INC·Filed 1998·Granted Oct 3, 2000·48 cites·24 claims
- 2277US6875693B1Via and metal line interface capable of reducing the incidence of electro-migration induced voidsLSI LOGIC CORP·Filed 2003·Granted Apr 5, 2005·21 cites·17 claims
- 2377US5915195AIon implantation process to improve the gate oxide quality at the edge of a shallow trench isolation structureADVANCED MICRO DEVICES INC·Filed 1997·Granted Jun 22, 1999·48 cites·11 claims
- 2476US6087705ATrench isolation structure partially bound between a pair of low K dielectric structuresADVANCED MICRO DEVICES INC·Filed 1998·Granted Jul 11, 2000·42 cites·11 claims
- 2576US4218280AMethod of cross-linking polyvinyl alcohol and other water soluble resinsNASA·Filed 1978·Granted Aug 19, 1980·23 cites·6 claims
- 2675US6531364B1Advanced fabrication technique to form ultra thin gate dielectric using a sacrificial polysilicon seed layerADVANCED MICRO DEVICES INC·Filed 1998·Granted Mar 11, 2003·34 cites·24 claims
- 2775US6005285AArgon doped epitaxial layers for inhibiting punchthrough within a semiconductor deviceADVANCED MICRO DEVICES INC·Filed 1998·Granted Dec 21, 1999·37 cites·14 claims
- 2874US6566244B1Process for improving mechanical strength of layers of low k dielectric materialLSI LOGIC CORP·Filed 2002·Granted May 20, 2003·20 cites·14 claims
- 2974US6168958B1Semiconductor structure having multiple thicknesses of high-K gate dielectrics and process of manufacture thereforADVANCED MICRO DEVICES INC·Filed 1998·Granted Jan 2, 2001·35 cites·24 claims
- 3073US6967177B1Temperature control systemLSI LOGIC CORP·Filed 2000·Granted Nov 22, 2005·14 cites·7 claims
- 3173US6560504B1Use of contamination-free manufacturing data in fault detection and classification as well as in run-to-run controlADVANCED MICRO DEVICES INC·Filed 1999·Granted May 6, 2003·47 cites·13 claims
- 3273US6140674ABuried trench capacitorADVANCED MICRO DEVICES INC·Filed 1998·Granted Oct 31, 2000·42 cites·20 claims
- 3372US6432812B1Method of coupling capacitance reductionLSI LOGIC CORP·Filed 2001·Granted Aug 13, 2002·12 cites·10 claims
- 3472US6077749AMethod of making dual channel gate oxide thickness for MOSFET transistor designADVANCED MICRO DEVICES INC·Filed 1998·Granted Jun 20, 2000·32 cites·17 claims
- 3571US5882983ATrench isolation structure partially bound between a pair of low K dielectric structuresADVANCED MICRO DEVICES INC·Filed 1997·Granted Mar 16, 1999·34 cites·7 claims
- 3670US5949126ATrench isolation structure employing protective sidewall spacers upon exposed surfaces of the isolation trenchADVANCED MICRO DEVICES INC·Filed 1997·Granted Sep 7, 1999·37 cites·6 claims
- 3769US6362510B1Semiconductor topography having improved active device isolation and reduced dopant migrationADVANCED MICRO DEVICES INC·Filed 1998·Granted Mar 26, 2002·35 cites·16 claims
- 3869US5950106AMethod of patterning a metal substrate using spin-on glass as a hard maskADVANCED MICRO DEVICES INC·Filed 1996·Granted Sep 7, 1999·34 cites·29 claims
- 3968US6544829B1Polysilicon gate salicidationLSI LOGIC CORP·Filed 2002·Granted Apr 8, 2003·15 cites·20 claims
- 4068US6261908B1Buried local interconnectADVANCED MICRO DEVICES INC·Filed 1998·Granted Jul 17, 2001·34 cites·15 claims
- 4168US6127235AMethod for making asymmetrical gate oxide thickness in channel MOSFET regionADVANCED MICRO DEVICES INC·Filed 1998·Granted Oct 3, 2000·26 cites·18 claims
- 4268US5981368AEnhanced shallow junction design by polysilicon line width reduction using oxidation with integrated spacer formationADVANCED MICRO DEVICES INC·Filed 1998·Granted Nov 9, 1999·27 cites·21 claims
- 4367US6251800B1Ultrathin deposited gate dielectric formation using low-power, low-pressure PECVD for improved semiconductor device performanceADVANCED MICRO DEVICES INC·Filed 1999·Granted Jun 26, 2001·31 cites·20 claims
- 4465US6117739ASemiconductor device with layered doped regions and methods of manufactureADVANCED MICRO DEVICES INC·Filed 1998·Granted Sep 12, 2000·28 cites·24 claims
- 4564US7361965B2Method and apparatus for redirecting void diffusion away from vias in an integrated circuit designLSI LOGIC CORP·Filed 2005·Granted Apr 22, 2008·2 cites·18 claims
- 4664US6620729B1Ion beam dual damascene processLSI LOGIC CORP·Filed 2001·Granted Sep 16, 2003·7 cites·17 claims
- 4764US6194768B1High dielectric constant gate dielectric with an overlying tantalum gate conductor formed on a sidewall surface of a sacrificial structureADVANCED MICRO DEVICES INC·Filed 1998·Granted Feb 27, 2001·21 cites·10 claims
- 4863US7023067B2Bond pad designLSI LOGIC CORP·Filed 2003·Granted Apr 4, 2006·11 cites·13 claims
- 4963US6159804ADisposable sidewall oxidation fabrication method for making a transistor having an ultra short channel lengthADVANCED MICRO DEVICES INC·Filed 1998·Granted Dec 12, 2000·22 cites·34 claims
- 5063US5904539ASemiconductor trench isolation process resulting in a silicon mesa having enhanced mechanical and electrical propertiesADVANCED MICRO DEVICES INC·Filed 1996·Granted May 18, 1999·28 cites·15 claims
Showing the top 50 of 125 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Charles E. May files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →