Assignee

ADVANCED MICRO SERVICES

US·1 granted patent·19 citations·filing 1998–1998

Technology mixH10D1

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1 record

0158US6255215B1Semiconductor device having silicide layers formed using a collimated metal layerADVANCED MICRO SERVICES·Filed 1998·Granted Jul 3, 2001·19 cites·23 claims

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