Inventor · disambiguated record
Hsun Chang
Also filed as: CHANG HSUN · CHANG HSUN-JUI
6 granted patents·3 pending applications·69 citations·filing 2006–2025
80Inventor score
Files withTAIWAN SEMICONDUCTOR MFG3TAIWAN SEMICONDUCTOR MFG CO LTD2KUO KEH-CHIANG1LEXTAR ELECTRONICS CORP1NIEH CHUN-FENG1
Top patents by PatentIndex Score
9 records- 0193US7838887B2Source/drain carbon implant and RTA anneal, pre-SiGe depositionTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted Nov 23, 2010·26 cites·10 claims
- 0292US8404546B2Source/drain carbon implant and RTA anneal, pre-SiGe depositionWOON WEI-YEN·Filed 2010·Granted Mar 26, 2013·35 cites·16 claims
- 0376US7494857B2Advanced activation approach for MOS devicesTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Feb 24, 2009·5 cites·19 claims
- 0471US2025386645A1Semiconductor elementLEXTAR ELECTRONICS CORP·Filed 2025·Application pending·0 cites
- 0570US7741699B2Semiconductor device having ultra-shallow and highly activated source/drain extensionsTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Jun 22, 2010·3 cites·11 claims
- 0669US2025254976A1Multi-functional transistors in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0765US12310092B2Multi-functional transistors in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 20, 2025·0 cites·20 claims
- 0842US2007298557A1Junction leakage reduction in SiGe process by tilt implantationNIEH CHUN-FENG·Filed 2006·Application pending·0 cites
- 0935US8273633B2Method of enhancing dopant activation without suffering additional dopant diffusionKUO KEH-CHIANG·Filed 2007·Granted Sep 25, 2012·0 cites·7 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →