Inventor · disambiguated record
Hua Chung
Also filed as: CHUNG HUA · CHUNG HUA-TING
145 granted patents·60 pending applications·6,099 citations·filing 1998–2025
99Inventor score
Files withAPPLIED MATERIALS INC130MATTSON TECH INC36CHEN LING6CHUNG HUA4BEIJING E TOWN SEMICONDUCTOR TECH CO LTD2
Top patents by PatentIndex Score
205 records- 0199US11018003B2Method of selective silicon germanium epitaxy at low temperaturesAPPLIED MATERIALS INC·Filed 2019·Granted May 25, 2021·312 cites·21 claims
- 0299US6551929B1Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniquesAPPLIED MATERIALS INC·Filed 2000·Granted Apr 22, 2003·396 cites·60 claims
- 0398US9929055B2Method to grow thin epitaxial films at low temperatureAPPLIED MATERIALS INC·Filed 2016·Granted Mar 27, 2018·313 cites·20 claims
- 0498US7591907B2Apparatus for hybrid chemical processingAPPLIED MATERIALS INC·Filed 2008·Granted Sep 22, 2009·375 cites·20 claims
- 0598US7465666B2Method for forming tungsten materials during vapor deposition processesAPPLIED MATERIALS INC·Filed 2007·Granted Dec 16, 2008·47 cites·33 claims
- 0698US7402210B2Apparatus and method for hybrid chemical processingAPPLIED MATERIALS INC·Filed 2007·Granted Jul 22, 2008·61 cites·13 claims
- 0798US7270709B2Method and apparatus of generating PDMAT precursorAPPLIED MATERIALS INC·Filed 2005·Granted Sep 18, 2007·50 cites·20 claims
- 0898US7241686B2Atomic layer deposition of tantalum-containing materials using the tantalum precursor TAIMATAAPPLIED MATERIALS INC·Filed 2005·Granted Jul 10, 2007·89 cites·31 claims
- 0998US7235486B2Method for forming tungsten materials during vapor deposition processesAPPLIED MATERIALS INC·Filed 2006·Granted Jun 26, 2007·43 cites·39 claims
- 1098US7204886B2Apparatus and method for hybrid chemical processingAPPLIED MATERIALS INC·Filed 2003·Granted Apr 17, 2007·525 cites·20 claims
- 1198US7049226B2Integration of ALD tantalum nitride for copper metallizationAPPLIED MATERIALS INC·Filed 2004·Granted May 23, 2006·514 cites·55 claims
- 1298US6916398B2Gas delivery apparatus and method for atomic layer depositionAPPLIED MATERIALS INC·Filed 2001·Granted Jul 12, 2005·646 cites·21 claims
- 1398US6905541B2Method and apparatus of generating PDMAT precursorAPPLIED MATERIALS INC·Filed 2003·Granted Jun 14, 2005·119 cites·32 claims
- 1497US11495437B2Surface pretreatment process to improve quality of oxide films produced by remote plasmaMATTSON TECH INC·Filed 2020·Granted Nov 8, 2022·4 cites·20 claims
- 1597US10269574B1Surface treatment of carbon containing films using organic radicalsMATTSON TECH INC·Filed 2018·Granted Apr 23, 2019·12 cites·25 claims
- 1697US9923081B1Selective process for source and drain formationAPPLIED MATERIALS INC·Filed 2017·Granted Mar 20, 2018·23 cites·20 claims
- 1797US8070879B2Apparatus and method for hybrid chemical processingCHEN LING·Filed 2009·Granted Dec 6, 2011·29 cites·11 claims
- 1897US7674715B2Method for forming tungsten materials during vapor deposition processesAPPLIED MATERIALS INC·Filed 2008·Granted Mar 9, 2010·35 cites·25 claims
- 1997US7595263B2Atomic layer deposition of barrier materialsAPPLIED MATERIALS INC·Filed 2007·Granted Sep 29, 2009·68 cites·42 claims
- 2097US7524762B2Atomic layer deposition of tantalum-containing materials using the tantalum precursor TAIMATAAPPLIED MATERIALS INC·Filed 2007·Granted Apr 28, 2009·61 cites·26 claims
- 2197US7405158B2Methods for depositing tungsten layers employing atomic layer deposition techniquesAPPLIED MATERIALS INC·Filed 2005·Granted Jul 29, 2008·105 cites·29 claims
- 2297US7265048B2Reduction of copper dewetting by transition metal depositionAPPLIED MATERIALS INC·Filed 2005·Granted Sep 4, 2007·47 cites·33 claims
- 2397US7115494B2Method and system for controlling the presence of fluorine in refractory metal layersAPPLIED MATERIALS INC·Filed 2006·Granted Oct 3, 2006·30 cites·54 claims
- 2497US7041335B2Titanium tantalum nitride silicide layerAPPLIED MATERIALS INC·Filed 2003·Granted May 9, 2006·152 cites·78 claims
- 2597US6838125B2Method of film deposition using activated precursor gasesAPPLIED MATERIALS INC·Filed 2002·Granted Jan 4, 2005·197 cites·24 claims
- 2697US6772072B2Method and apparatus for monitoring solid precursor deliveryAPPLIED MATERIALS INC·Filed 2002·Granted Aug 3, 2004·127 cites·35 claims
- 2796US11043393B2Ozone treatment for selective silicon nitride etch over siliconMATTSON TECH INC·Filed 2020·Granted Jun 22, 2021·5 cites·20 claims
- 2896US9209279B1Self aligned replacement fin formationAPPLIED MATERIALS INC·Filed 2014·Granted Dec 8, 2015·20 cites·11 claims
- 2996US8668776B2Gas delivery apparatus and method for atomic layer depositionCHEN LING·Filed 2010·Granted Mar 11, 2014·21 cites·14 claims
- 3096US7846840B2Method for forming tungsten materials during vapor deposition processesAPPLIED MATERIALS INC·Filed 2009·Granted Dec 7, 2010·19 cites·22 claims
- 3196US7745333B2Methods for depositing tungsten layers employing atomic layer deposition techniquesAPPLIED MATERIALS INC·Filed 2008·Granted Jun 29, 2010·47 cites·15 claims
- 3296US7699023B2Gas delivery apparatus for atomic layer depositionAPPLIED MATERIALS INC·Filed 2007·Granted Apr 20, 2010·34 cites·20 claims
- 3396US7605083B2Formation of composite tungsten filmsAPPLIED MATERIALS INC·Filed 2008·Granted Oct 20, 2009·39 cites·25 claims
- 3496US7597758B2Chemical precursor ampoule for vapor deposition processesAPPLIED MATERIALS INC·Filed 2007·Granted Oct 6, 2009·16 cites·20 claims
- 3596US7211508B2Atomic layer deposition of tantalum based barrier materialsAPPLIED MATERIALS INC·Filed 2004·Granted May 1, 2007·139 cites·25 claims
- 3696US7081271B2Cyclical deposition of refractory metal silicon nitrideAPPLIED MATERIALS INC·Filed 2002·Granted Jul 25, 2006·124 cites·57 claims
- 3796US6939804B2Formation of composite tungsten filmsAPPLIED MATERIALS INC·Filed 2002·Granted Sep 6, 2005·116 cites·61 claims
- 3896US6660126B2Lid assembly for a processing system to facilitate sequential deposition techniquesAPPLIED MATERIALS INC·Filed 2001·Granted Dec 9, 2003·128 cites·28 claims
- 3995US6972267B2Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursorAPPLIED MATERIALS INC·Filed 2003·Granted Dec 6, 2005·63 cites·20 claims
- 4095US6855368B1Method and system for controlling the presence of fluorine in refractory metal layersAPPLIED MATERIALS INC·Filed 2000·Granted Feb 15, 2005·58 cites·15 claims
- 4195US6797340B2Method for depositing refractory metal layers employing sequential deposition techniquesAPPLIED MATERIALS INC·Filed 2002·Granted Sep 28, 2004·167 cites·20 claims
- 4294US10804109B2Surface treatment of silicon and carbon containing films by remote plasma with organic precursorsMATTSON TECH INC·Filed 2018·Granted Oct 13, 2020·6 cites·27 claims
- 4394US7085616B2Atomic layer deposition apparatusAPPLIED MATERIALS INC·Filed 2001·Granted Aug 1, 2006·42 cites·39 claims
- 4493US11062910B2Surface treatment of silicon or silicon germanium surfaces using organic radicalsMATTSON TECH INC·Filed 2019·Granted Jul 13, 2021·4 cites·18 claims
- 4593US10403492B1Integration of materials removal and surface treatment in semiconductor device fabricationMATTSON TECH INC·Filed 2018·Granted Sep 3, 2019·8 cites·19 claims
- 4693US7780785B2Gas delivery apparatus for atomic layer depositionAPPLIED MATERIALS INC·Filed 2002·Granted Aug 24, 2010·61 cites·26 claims
- 4793US7780788B2Gas delivery apparatus for atomic layer depositionAPPLIED MATERIALS INC·Filed 2005·Granted Aug 24, 2010·17 cites·62 claims
- 4893US7422637B2Processing chamber configured for uniform gas flowAPPLIED MATERIALS INC·Filed 2006·Granted Sep 9, 2008·14 cites·19 claims
- 4993US6936906B2Integration of barrier layer and seed layerAPPLIED MATERIALS INC·Filed 2001·Granted Aug 30, 2005·56 cites·31 claims
- 5092US10950416B2Chamber seasoning to improve etch uniformity by reducing chemistryMATTSON TECH INC·Filed 2019·Granted Mar 16, 2021·5 cites·18 claims
Showing the top 50 of 205 patent records by PatentIndex Score.
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