Inventor · disambiguated record
Bryan Pu
Also filed as: PU BRYAN · PU BRYAN Y
42 granted patents·7 pending applications·3,909 citations·filing 1995–2016
99Inventor score
Files withAPPLIED MATERIALS INC33LEE WONCHUL2WANG JUDY2ADVANCED MICRO FABRICATION EQUIPMENT INC SHANGHAI1APPLLIED MATERIALS INC1
Top patents by PatentIndex Score
49 records- 0198US8231799B2Plasma reactor apparatus with multiple gas injection zones having time-changing separate configurable gas compositions for each zoneBERA KALLOL·Filed 2006·Granted Jul 31, 2012·557 cites·18 claims
- 0297US7316761B2Apparatus for uniformly etching a dielectric layerAPPLIED MATERIALS INC·Filed 2003·Granted Jan 8, 2008·178 cites·20 claims
- 0397US6403491B1Etch method using a dielectric etch chamber with expanded process windowAPPLIED MATERIALS INC·Filed 2000·Granted Jun 11, 2002·396 cites·24 claims
- 0497US5891350AAdjusting DC bias voltage in plasma chambersAPPLIED MATERIALS INC·Filed 1996·Granted Apr 6, 1999·186 cites·21 claims
- 0597US5674321AMethod and apparatus for producing plasma uniformity in a magnetic field-enhanced plasma reactorAPPLIED MATERIALS INC·Filed 1995·Granted Oct 7, 1997·150 cites·9 claims
- 0696US6716302B2Dielectric etch chamber with expanded process windowAPPLIED MATERIALS INC·Filed 2002·Granted Apr 6, 2004·91 cites·18 claims
- 0796US6568346B2Distributed inductively-coupled plasma source and circuit for coupling induction coils to RF power supplyAPPLIED MATERIALS INC·Filed 2001·Granted May 27, 2003·66 cites·22 claims
- 0896US6364957B1Support assembly with thermal expansion compensationAPPLIED MATERIALS INC·Filed 2000·Granted Apr 2, 2002·368 cites·55 claims
- 0996US5843847AMethod for etching dielectric layers with high selectivity and low microloadingAPPLIED MATERIALS INC·Filed 1996·Granted Dec 1, 1998·319 cites·51 claims
- 1095US6825618B2Distributed inductively-coupled plasma source and circuit for coupling induction coils to RF power supplyFiled 2003·Granted Nov 30, 2004·60 cites·4 claims
- 1195US6284093B1Shield or ring surrounding semiconductor workpiece in plasma chamberAPPLIED MATERIALS INC·Filed 2000·Granted Sep 4, 2001·133 cites·46 claims
- 1295US6273022B1Distributed inductively-coupled plasma sourceAPPLIED MATERIALS INC·Filed 1998·Granted Aug 14, 2001·96 cites·42 claims
- 1394US6829056B1Monitoring dimensions of features at different locations in the processing of substratesFiled 2003·Granted Dec 7, 2004·107 cites·19 claims
- 1494US6797639B2Dielectric etch chamber with expanded process windowAPPLIED MATERIALS INC·Filed 2002·Granted Sep 28, 2004·63 cites·30 claims
- 1593US6451703B1Magnetically enhanced plasma etch process using a heavy fluorocarbon etching gasAPPLIED MATERIALS INC·Filed 2000·Granted Sep 17, 2002·96 cites·47 claims
- 1692US8609546B2Pulsed bias plasma process to control microloadingLEE WONCHUL·Filed 2008·Granted Dec 17, 2013·24 cites·21 claims
- 1792US6916399B1Temperature controlled window with a fluid supply systemAPPLIED MATERIALS INC·Filed 1999·Granted Jul 12, 2005·168 cites·20 claims
- 1892US6113731AMagnetically-enhanced plasma chamber with non-uniform magnetic fieldAPPLIED MATERIALS INC·Filed 1997·Granted Sep 5, 2000·152 cites·42 claims
- 1991US8187415B2Plasma etch reactor with distribution of etch gases across a wafer surface and a polymer oxidizing gas in an independently fed center gas zoneKIM JONG MUN·Filed 2006·Granted May 29, 2012·20 cites·9 claims
- 2091US6326307B1Plasma pretreatment of photoresist in an oxide etch processAPPLLIED MATERIALS INC·Filed 1999·Granted Dec 4, 2001·201 cites·28 claims
- 2190US7431859B2Plasma etch process using polymerizing etch gases with different etch and polymer-deposition rates in different radial gas injection zones with time modulationAPPLIED MATERIALS INC·Filed 2006·Granted Oct 7, 2008·18 cites·16 claims
- 2290US6513452B2Adjusting DC bias voltage in plasma chamberAPPLIED MATERIALS INC·Filed 2001·Granted Feb 4, 2003·29 cites·20 claims
- 2390US5740009AApparatus for improving wafer and chuck edge protectionAPPLIED MATERIALS INC·Filed 1996·Granted Apr 14, 1998·117 cites·24 claims
- 2489US7540971B2Plasma etch process using polymerizing etch gases across a wafer surface and additional polymer managing or controlling gases in independently fed gas zones with time and spatial modulation of gas contentAPPLIED MATERIALS INC·Filed 2006·Granted Jun 2, 2009·16 cites·19 claims
- 2589US6689249B2Shield or ring surrounding semiconductor workpiece in plasma chamberAPPLIED MATERIALS INC·Filed 2001·Granted Feb 10, 2004·48 cites·20 claims
- 2688US6022446AShallow magnetic fields for generating circulating electrons to enhance plasma processingFiled 1995·Granted Feb 8, 2000·63 cites·34 claims
- 2787US7879186B2Method and apparatus for shaping a magnetic field in a magnetic field-enhanced plasma reactorAPPLIED MATERIALS INC·Filed 2008·Granted Feb 1, 2011·7 cites·8 claims
- 2887US7541292B2Plasma etch process with separately fed carbon-lean and carbon-rich polymerizing etch gases in independent inner and outer gas injection zonesAPPLIED MATERIALS INC·Filed 2006·Granted Jun 2, 2009·12 cites·21 claims
- 2985US10593520B2Temperature adjusting apparatus and method for a focus ringADVANCED MICRO FABRICATION EQUIPMENT INC SHANGHAI·Filed 2016·Granted Mar 17, 2020·5 cites·9 claims
- 3084US6613689B2Magnetically enhanced plasma oxide etch using hexafluorobutadieneAPPLIED MATERIALS INC·Filed 2002·Granted Sep 2, 2003·38 cites·52 claims
- 3183US7432210B2Process to open carbon based hardmaskAPPLIED MATERIALS INC·Filed 2005·Granted Oct 7, 2008·9 cites·9 claims
- 3283US7374636B2Method and apparatus for providing uniform plasma in a magnetic field enhanced plasma reactorAPPLIED MATERIALS INC·Filed 2002·Granted May 20, 2008·21 cites·16 claims
- 3382US7807064B2Halogen-free amorphous carbon mask etch having high selectivity to photoresistAPPLIED MATERIALS INC·Filed 2007·Granted Oct 5, 2010·8 cites·17 claims
- 3482US7629255B2Method for reducing microloading in etching high aspect ratio structuresLAM RES CORP·Filed 2007·Granted Dec 8, 2009·8 cites·10 claims
- 3582US6221782B1Adjusting DC bias voltage in plasma chamberAPPLIED MATERIALS INC·Filed 1999·Granted Apr 24, 2001·31 cites·12 claims
- 3679US7422654B2Method and apparatus for shaping a magnetic field in a magnetic field-enhanced plasma reactorAPPLIED MATERIALS INC·Filed 2004·Granted Sep 9, 2008·11 cites·35 claims
- 3777US8518282B2Method of controlling etch microloading for a tungsten-containing layerLEE WONCHUL·Filed 2008·Granted Aug 27, 2013·5 cites·20 claims
- 3871US7316199B2Method and apparatus for controlling the magnetic field intensity in a plasma enhanced semiconductor wafer processing chamberAPPLIED MATERIALS INC·Filed 2002·Granted Jan 8, 2008·9 cites·11 claims
- 3970US7736914B2Plasma control using dual cathode frequency mixing and controlling the level of polymer formationAPPLIED MATERIALS INC·Filed 2007·Granted Jun 15, 2010·3 cites·20 claims
- 4066US7838430B2Plasma control using dual cathode frequency mixingAPPLIED MATERIALS INC·Filed 2004·Granted Nov 23, 2010·8 cites·27 claims
- 4164US6787475B2Flash step preparatory to dielectric etchFiled 2002·Granted Sep 7, 2004·12 cites·34 claims
- 4250US2007000611A1Plasma control using dual cathode frequency mixingAPPLIED MATERIALS INC·Filed 2006·Application pending·0 cites
- 4348US8936696B2Method and apparatus for shaping a magnetic field in a magnetic field-enhanced plasma reactorLINDLEY ROGER ALAN·Filed 2011·Granted Jan 20, 2015·0 cites·20 claims
- 4448US2008286977A1Process to open carbon based hardmask overlying a dielectric layerWANG JUDY·Filed 2008·Application pending·0 cites
- 4544US2005003675A1Dielectric etch chamber with expanded process windowFiled 2004·Application pending·0 cites
- 4643US2007254483A1Plasma etch process using polymerizing etch gases and an inert diluent gas in independent gas injection zones to improve etch profile or etch rate uniformityAPPLIED MATERIALS INC·Filed 2006·Application pending·0 cites
- 4742US2007249173A1Plasma etch process using etch uniformity control by using compositionally independent gas feedAPPLIED MATERIALS INC·Filed 2006·Application pending·0 cites
- 4840US2008203056A1Methods for etching high aspect ratio featuresWANG JUDY·Filed 2007·Application pending·0 cites
- 4937US2004027781A1Low loss RF bias electrode for a plasma reactor with enhanced wafer edge RF coupling and highly efficient wafer coolingFiled 2002·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →