Inventor · disambiguated record
Hajime Fujikura
Also filed as: FUJIKURA HAJIME
47 granted patents·15 pending applications·122 citations·filing 2003–2025
97Inventor score
Top patents by PatentIndex Score
62 records- 0191US7663138B2Nitride semiconductor light emitting elementHITACHI CABLE·Filed 2007·Granted Feb 16, 2010·21 cites·16 claims
- 0290US11339053B2Nitride crystalSCIOCS CO LTD·Filed 2019·Granted May 24, 2022·2 cites·12 claims
- 0389US7504667B2Light emitting diode having surface containing flat portion and plurality of boresHITACHI CABLE·Filed 2005·Granted Mar 17, 2009·33 cites·27 claims
- 0487US10978296B2Nitride semiconductor substrate, semiconductor laminate, laminated structure, method for manufacturing nitride semiconductor substrate and method for manufacturing semiconductor laminateSCIOCS CO LTD·Filed 2018·Granted Apr 13, 2021·4 cites·9 claims
- 0585US10209203B2Wafer inspection apparatus and wafer inspection methodSUMITOMO CHEMICAL CO·Filed 2017·Granted Feb 19, 2019·2 cites·10 claims
- 0685US9175417B2Method for manufacturing a nitride semiconductor substrateFUJIKURA HAJIME·Filed 2012·Granted Nov 3, 2015·2 cites·19 claims
- 0785US8664663B2Nitride semiconductor template and light-emitting diode including oxygen-doped layer and silicon-doped layer formed on the oxygen-doped layerKONNO TAICHIROO·Filed 2012·Granted Mar 4, 2014·7 cites·20 claims
- 0881US7294200B2Method for producing nitride semiconductor crystal, and nitride semiconductor wafer and nitride semiconductor deviceHITACHI CABLE·Filed 2003·Granted Nov 13, 2007·19 cites·22 claims
- 0979US10472715B2Nitride semiconductor template, manufacturing method thereof, and epitaxial waferSUMITOMO CHEMICAL CO·Filed 2016·Granted Nov 12, 2019·3 cites·26 claims
- 1078US8310029B2Group III nitride semiconductor free-standing substrate and method of manufacturing the same, group III nitride semiconductor device and method of manufacturing the sameFUJIKURA HAJIME·Filed 2010·Granted Nov 13, 2012·6 cites·11 claims
- 1177US8030682B2Zinc-blende nitride semiconductor free-standing substrate, method for fabricating same, and light-emitting device employing sameHITACHI CABLE·Filed 2007·Granted Oct 4, 2011·5 cites·7 claims
- 1272US9779934B2Nitride semiconductor free-standing substrate, method of manufacturing the same and nitride semiconductor deviceFUJIKURA HAJIME·Filed 2009·Granted Oct 3, 2017·3 cites·6 claims
- 1371US8829489B2Nitride semiconductor template and light-emitting diodeHITACHI CABLE·Filed 2012·Granted Sep 9, 2014·2 cites·9 claims
- 1470US12378694B2Nitride crystal, semiconductor laminate, and method for manufacturing nitride crystalSUMITOMO CHEMICAL CO·Filed 2022·Granted Aug 5, 2025·0 cites·10 claims
- 1569US10060047B2Nitride semiconductor crystal producing method including growing nitride semiconductor crystal over seed crystal substrateSUMITOMO CHEMICAL CO·Filed 2014·Granted Aug 28, 2018·0 cites·31 claims
- 1669US2025198051A1Nitride crystal substrate and production method for nitride crystal substrateSUMITOMO CHEMICAL CO·Filed 2024·Application pending·0 cites
- 1769US2025129513A1Production method for nitride crystal substrate and nitride crystal substrateSUMITOMO CHEMICAL CO·Filed 2024·Application pending·0 cites
- 1868US11549196B2Aluminum nitride laminate member and aluminum nitride layerSUMITOMO CHEMICAL CO·Filed 2020·Granted Jan 10, 2023·0 cites·16 claims
- 1967US7932107B2Method for growing nitride semiconductorHITACHI CABLE·Filed 2007·Granted Apr 26, 2011·2 cites·20 claims
- 2066US10084113B2Nitride semiconductor template and light emitting elementSUMITOMO CHEMICAL CO·Filed 2017·Granted Sep 25, 2018·1 cites·18 claims
- 2166US9397232B2Nitride semiconductor epitaxial substrate and nitride semiconductor deviceHITACHI METALS LTD·Filed 2015·Granted Jul 19, 2016·1 cites·14 claims
- 2266US8786052B2Nitride semiconductor crystal producing method, nitride semiconductor epitaxial wafer, and nitride semiconductor freestanding substrateFUJIKURA HAJIME·Filed 2012·Granted Jul 22, 2014·0 cites·3 claims
- 2366US2024271320A1Seed substrate for nitride crystal growth, production method for nitride crystal substrate, and peeled intermediateSUMITOMO CHEMICAL CO·Filed 2024·Application pending·0 cites
- 2465US12488985B2Semiconductor laminate and method for manufacturing semiconductor laminateSUMITOMO CHEMICAL CO·Filed 2023·Granted Dec 2, 2025·0 cites·14 claims
- 2564US11008671B2Nitride crystalSCIOCS CO LTD·Filed 2019·Granted May 18, 2021·0 cites·3 claims
- 2663US11552218B2Aluminum nitride laminate member and light-emitting deviceSUMITOMO CHEMICAL CO·Filed 2020·Granted Jan 10, 2023·0 cites·14 claims
- 2763US9105755B2Method of manufacturing a nitride semiconductor epitaxial substrateFUJIKURA HAJIME·Filed 2012·Granted Aug 11, 2015·1 cites·4 claims
- 2862US2025054754A1Production method for nitride crystal substrate, and peeled intermediateSUMITOMO CHEMICAL CO·Filed 2024·Application pending·0 cites
- 2962US2024387181A1Method for manufacturing semiconductor memberSUMITOMO CHEMICAL CO·Filed 2024·Application pending·0 cites
- 3061US8026523B2Nitride semiconductor free-standing substrate and device using the sameHITACHI CABLE·Filed 2008·Granted Sep 27, 2011·1 cites·15 claims
- 3160US11631785B2Group-III nitride laminated substrate and semiconductor light-emitting elementSUMITOMO CHEMICAL CO·Filed 2020·Granted Apr 18, 2023·0 cites·14 claims
- 3260US6989287B2Method for producing nitride semiconductor, semiconductor wafer and semiconductor deviceHITACHI CABLE·Filed 2004·Granted Jan 24, 2006·7 cites·15 claims
- 3359US11908902B2Group III nitride laminate, semiconductor element, and method for producing group III nitride laminateSUMITOMO CHEMICAL CO·Filed 2021·Granted Feb 20, 2024·0 cites·13 claims
- 3458US2025132151A1Semiconductor laminate, semiconductor element, and semiconductor laminate production methodSUMITOMO CHEMICAL CO·Filed 2024·Application pending·0 cites
- 3557US12002903B2Group-III nitride laminated substrate and semiconductor elementSUMITOMO CHEMICAL CO·Filed 2020·Granted Jun 4, 2024·0 cites·13 claims
- 3657US9359692B2Metal chloride gas generator, hydride vapor phase epitaxy growth apparatus, and method for fabricating a nitride semiconductor templateHITACHI CABLE·Filed 2013·Granted Jun 7, 2016·0 cites·8 claims
- 3756US11522105B2Nitride semiconductor laminated structure, nitride semiconductor light emitting element, and method for manufacturing nitride semiconductor laminated structureSUMITOMO CHEMICAL CO·Filed 2020·Granted Dec 6, 2022·0 cites·7 claims
- 3853US10903074B2GaN laminate and method of manufacturing the sameSCIOCS CO LTD·Filed 2019·Granted Jan 26, 2021·0 cites·9 claims
- 3951US10978294B2Semi-insulating crystal, N-type semiconductor crystal and P-type semiconductor crystalSCIOCS CO LTD·Filed 2017·Granted Apr 13, 2021·0 cites·7 claims
- 4051US10418241B2Metal chloride gas generator, hydride vapor phase epitaxy growth apparatus, and nitride semiconductor templateSUMITOMO CHEMICAL CO·Filed 2015·Granted Sep 17, 2019·0 cites·20 claims
- 4150US10707309B2GaN laminate and method of manufacturing the sameSCIOCS CO LTD·Filed 2019·Granted Jul 7, 2020·0 cites·10 claims
- 4250US9236252B2Metal chloride gas generator, hydride vapor phase epitaxy growth apparatus, and nitride semiconductor templateKONNO TAICHIROO·Filed 2012·Granted Jan 12, 2016·0 cites·17 claims
- 4350US2010272141A1Nitride semiconductor freestanding substrate and manufacturing method of the same, and laser diodeHITACHI CABLE·Filed 2009·Application pending·0 cites
- 4449US11600704B2Nitride semiconductor laminate, semiconductor device, method of manufacturing nitride semiconductor laminate, method of manufacturing nitride semiconductor free-standing substrate and method of manufacturing semiconductor deviceSUMITOMO CHEMICAL CO·Filed 2018·Granted Mar 7, 2023·0 cites·16 claims
- 4549US2012305935A1Apparatus for producing metal chloride gas and method for producing metal chloride gas, and apparatus for hydride vapor phase epitaxy, nitride semiconductor wafer, nitride semiconductor device, wafer for nitride semiconductor light emitting diode, method for manufacturing nitride semiconductor freestanidng substrate and nitride semiconductor crystalFUJIKURA HAJIME·Filed 2012·Application pending·0 cites
- 4648US2013092950A1Nitride semiconductor growth substrate and manufacturing method of the same, nitride semiconductor epitaxial substrate and nitride semiconductor elementFUJIKURA HAJIME·Filed 2012·Application pending·0 cites
- 4747US10062807B2Method for manufacturing nitride semiconductor templateSUMITOMO CHEMICAL CO·Filed 2015·Granted Aug 28, 2018·0 cites·8 claims
- 4847US9812607B2Method for manufacturing nitride semiconductor templateSUMITOMO CHEMICAL CO·Filed 2015·Granted Nov 7, 2017·0 cites·5 claims
- 4946US8237245B2Nitride semiconductor crystal, manufacturing method of the nitride semiconductor freestanding substrate and nitride semiconductor deviceFUJIKURA HAJIME·Filed 2010·Granted Aug 7, 2012·0 cites·17 claims
- 5046US2015140791A1Apparatus for producing metal chloride gas and method for producing metal chloride gas, and apparatus for hydride vapor phase epitaxy, nitride semiconductor wafer, nitride semiconductor device, wafer for nitride semiconductor light emitting diode, method for manufacturing nitride semiconductor freestanidng substrate and nitride semiconductor crystalHITACHI METALS LTD·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →