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FUJIKURA HAJIME
JP7 patents
Top patents by PatentIndex Score
US8310029B2Nov 13, 2012
Group III nitride semiconductor free-standing substrate and method of manufacturing the same, group III nitride semiconductor device and method of manufacturing the same
FUJIKURA HAJIME6 citations80
US9779934B2Oct 3, 2017
Nitride semiconductor free-standing substrate, method of manufacturing the same and nitride semiconductor device
FUJIKURA HAJIME3 citations72
US9175417B2Nov 3, 2015
Method for manufacturing a nitride semiconductor substrate
FUJIKURA HAJIME2 citations62
US8786052B2Jul 22, 2014
Nitride semiconductor crystal producing method, nitride semiconductor epitaxial wafer, and nitride semiconductor freestanding substrate
FUJIKURA HAJIME0 citations51
US8664123B2Mar 4, 2014
Method for manufacturing nitride semiconductor substrate
FUJIKURA HAJIME0 citations51
US8237245B2Aug 7, 2012
Nitride semiconductor crystal, manufacturing method of the nitride semiconductor freestanding substrate and nitride semiconductor device
FUJIKURA HAJIME0 citations51
US9105755B2Aug 11, 2015
Method of manufacturing a nitride semiconductor epitaxial substrate
FUJIKURA HAJIME1 citations50