Inventor · disambiguated record
Mitsuhiro Tomoeda
Also filed as: TOMOEDA MITSUHIRO
9 granted patents·1 pending application·216 citations·filing 1995–2015
88Inventor score
Files withRENESAS ELECTRONICS CORP3RENESAS TECH CORP2MITSUBISHI ELEC SEMICONDUCTOR1MITSUBISHI ELECTRIC CORP1OGAWA TOMOYA1
Top patents by PatentIndex Score
10 records- 0192US5574684AFlash memory having data refresh function and data refresh method of flash memoryMITSUBISHI ELEC SEMICONDUCTOR·Filed 1995·Granted Nov 12, 1996·127 cites·14 claims
- 0283US6515908B2Nonvolatile semiconductor memory device having reduced erase time and method of erasing data of the sameMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Feb 4, 2003·37 cites·17 claims
- 0374US6781882B2Nonvolatile semiconductor storage device having a shortened time required for a data erasing operation and data erasing method thereofRENESAS TECH CORP·Filed 2002·Granted Aug 24, 2004·22 cites·18 claims
- 0462US7969200B2Decoder circuitRENESAS ELECTRONICS CORP·Filed 2010·Granted Jun 28, 2011·2 cites·2 claims
- 0562US7050336B2Nonvolatile semiconductor memory device having reduced erasing timeRENESAS DEVICES DESIGN CORP·Filed 2004·Granted May 23, 2006·15 cites·13 claims
- 0660US9177657B2Semiconductor device having non-volatile memory with data erase schemeOGAWA TOMOYA·Filed 2012·Granted Nov 3, 2015·2 cites·10 claims
- 0757US7795922B2Decoder circuitRENESAS ELECTRONICS CORP·Filed 2009·Granted Sep 14, 2010·2 cites·4 claims
- 0850US6870771B2Nonvolatile semiconductor memory device that can suppress effect of threshold voltage variation of memory cell transistorRENESAS TECH CORP·Filed 2002·Granted Mar 22, 2005·9 cites·18 claims
- 0940US2016012900A1Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2015·Application pending·0 cites
- 1034US8242808B2Decoder circuitTOMOEDA MITSUHIRO·Filed 2011·Granted Aug 14, 2012·0 cites·2 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →