Inventor · disambiguated record
Klaus Hempel
Also filed as: HEMPEL KLAUS
22 granted patents·6 pending applications·86 citations·filing 2004–2023
94Inventor score
Top patents by PatentIndex Score
28 records- 0190US8247281B2Technique for exposing a placeholder material in a replacement gate approach by modifying a removal rate of stressed dielectric overlayersHEMPEL KLAUS·Filed 2010·Granted Aug 21, 2012·13 cites·18 claims
- 0290US8048792B2Superior fill conditions in a replacement gate approach by corner rounding prior to completely removing a placeholder materialGLOBALFOUNDRIES INC·Filed 2010·Granted Nov 1, 2011·14 cites·19 claims
- 0385US8367495B2Method for forming CMOS transistors having metal-containing gate electrodes formed on a high-K gate dielectric materialGLOBALFOUNDRIES INC·Filed 2010·Granted Feb 5, 2013·8 cites·20 claims
- 0485US8232188B2High-K metal gate electrode structures formed by separate removal of placeholder materials using a masking regime prior to gate patterningBEYER SVEN·Filed 2010·Granted Jul 31, 2012·8 cites·9 claims
- 0584US8298894B2Work function adjustment in high-k metal gate electrode structures by selectively removing a barrier layerLENSKI MARKUS·Filed 2010·Granted Oct 30, 2012·8 cites·12 claims
- 0678US8735236B2High-k metal gate electrode structure formed by removing a work function on sidewalls in replacement gate technologyHEMPEL KLAUS·Filed 2011·Granted May 27, 2014·5 cites·17 claims
- 0778US8440559B2Work function adjustment in high-K metal gate electrode structures by selectively removing a barrier layerGLOBALFOUNDRIES INC·Filed 2012·Granted May 14, 2013·4 cites·20 claims
- 0877US8420519B1Methods for fabricating integrated circuits with controlled P-channel threshold voltageTRIYOSO DINA·Filed 2011·Granted Apr 16, 2013·5 cites·19 claims
- 0976US8652956B2High-k metal gate electrode structures formed by separate removal of placeholder materials using a masking regime prior to gate patterningBEYER SVEN·Filed 2012·Granted Feb 18, 2014·4 cites·16 claims
- 1075US8664103B2Metal gate stack formation for replacement gate technologyHEMPEL KLAUS·Filed 2011·Granted Mar 4, 2014·4 cites·27 claims
- 1173US7358150B2Trench isolation structure for a semiconductor device with reduced sidewall stress and a method of manufacturing the sameADVANCED MICRO DEVICES INC·Filed 2006·Granted Apr 15, 2008·7 cites·18 claims
- 1269US8735270B2Method for making high-K metal gate electrode structures by separate removal of placeholder materialsGLOBALFOUNDRIES INC·Filed 2013·Granted May 27, 2014·2 cites·20 claims
- 1364US8450163B2Semiconductor device comprising metal gates and semiconductor resistors formed on the basis of a replacement gate approachBEYER SVEN·Filed 2010·Granted May 28, 2013·2 cites·19 claims
- 1461US2023248621A1Powder/granules for making a shower gel or shampooMANN & SCHROEDER GMBH·Filed 2023·Application pending·0 cites
- 1559US8716120B2High-k metal gate electrode structures formed by reducing a gate fill aspect ratio in replacement gate technologyHEMPEL KLAUS·Filed 2012·Granted May 6, 2014·1 cites·21 claims
- 1651US10121665B2Short-channel NFET deviceGLOBALFOUNDRIES INC·Filed 2017·Granted Nov 6, 2018·0 cites·15 claims
- 1751US8158486B2Trench isolation structure having different stressVAN BENTUM RALF·Filed 2006·Granted Apr 17, 2012·1 cites·29 claims
- 1849US8357575B2Technique for exposing a placeholder material in a replacement gate approach by modifying a removal rate of stressed dielectric overlayersGLOBALFOUNDRIES INC·Filed 2012·Granted Jan 22, 2013·0 cites·12 claims
- 1947US9917016B2Integrated circuits and methods of forming the same with effective dummy gate cap removalGLOBALFOUNDRIES INC·Filed 2014·Granted Mar 13, 2018·0 cites·11 claims
- 2046US9735012B2Short-channel nFET deviceGLOBALFOUNDRIES INC·Filed 2015·Granted Aug 15, 2017·0 cites·20 claims
- 2142US2011101470A1High-k metal gate electrode structures formed by separate removal of placeholder materials in transistors of different conductivity typeHEMPEL KLAUS·Filed 2010·Application pending·0 cites
- 2241US2007081420A1Static mixing device, discharge device and supply container comprising said mixing device, use of said mixing device and discharge methodEFTEC EUROPE HOLDING AG·Filed 2004·Application pending·0 cites
- 2338US8697530B2Drain/source extension structure of a field effect transistor with reduced boron diffusionPRUEFER EKKEHARD·Filed 2007·Granted Apr 15, 2014·0 cites·20 claims
- 2437US2012238086A1Reducing equivalent thickness of high-k dielectrics in field effect transistors by performing a low temperature annealHEMPEL KLAUS·Filed 2012·Application pending·0 cites
- 2537US2013302974A1Replacement gate electrode fill at reduced temperaturesHAHN JENS·Filed 2012·Application pending·0 cites
- 2633US8324091B2Enhancing integrity of a high-k gate stack by confining a metal cap layer after depositionMETZGER JOACHIM·Filed 2010·Granted Dec 4, 2012·0 cites·24 claims
- 2732US8673759B2Dry etch polysilicon removal for replacement gatesPRINDLE CHRIS M·Filed 2012·Granted Mar 18, 2014·0 cites·20 claims
- 2829US2011127590A1Increasing stability of a high-k gate dielectric of a high-k gate stack by an oxygen rich titanium nitride cap layerBINDER ROBERT·Filed 2010·Application pending·0 cites
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