Inventor · disambiguated record
Thomas Jongwan Kwon
Also filed as: KWON THOMAS · KWON THOMAS J · KWON THOMAS JONGWAN
26 granted patents·9 pending applications·106 citations·filing 2004–2023
94Inventor score
Files withAPPLIED MATERIALS INC18SEMES CO LTD8CHANGXIN MEMORY TECH INC3SANDISK TECHNOLOGIES INC2KIM KI-CHUL1
Top patents by PatentIndex Score
35 records- 0197US10622214B2Tungsten defluorination by high pressure treatmentAPPLIED MATERIALS INC·Filed 2017·Granted Apr 14, 2020·15 cites·20 claims
- 0296US9806090B2Vertical floating gate NAND with selectively deposited ALD metal filmsSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Oct 31, 2017·18 cites·11 claims
- 0396US9379124B2Vertical floating gate NAND with selectively deposited ALD metal filmsSANDISK TECHNOLOGIES INC·Filed 2014·Granted Jun 28, 2016·24 cites·19 claims
- 0495US9524779B2Three dimensional vertical NAND device with floating gatesSANDISK TECHNOLOGIES INC·Filed 2014·Granted Dec 20, 2016·21 cites·20 claims
- 0588US9991118B2Hybrid carbon hardmask for lateral hardmask recess reductionAPPLIED MATERIALS INC·Filed 2017·Granted Jun 5, 2018·4 cites·19 claims
- 0686US10246772B2Plasma enhanced chemical vapor deposition of films for improved vertical etch performance in 3D NAND memory devicesAPPLIED MATERIALS INC·Filed 2016·Granted Apr 2, 2019·5 cites·20 claims
- 0785US10157787B2Method and apparatus for depositing cobalt in a featureAPPLIED MATERIALS INC·Filed 2016·Granted Dec 18, 2018·4 cites·5 claims
- 0880US11164882B23-D NAND control gate enhancementAPPLIED MATERIALS INC·Filed 2020·Granted Nov 2, 2021·1 cites·9 claims
- 0974US10410864B2Hybrid carbon hardmask for lateral hardmask recess reductionAPPLIED MATERIALS INC·Filed 2018·Granted Sep 10, 2019·1 cites·19 claims
- 1072US11365476B2Plasma enhanced chemical vapor deposition of films for improved vertical etch performance in 3D NAND memory devicesAPPLIED MATERIALS INC·Filed 2019·Granted Jun 21, 2022·1 cites·20 claims
- 1171US12317493B2Methods of forming 3D NAND structures with decreased pitchAPPLIED MATERIALS INC·Filed 2022·Granted May 27, 2025·0 cites·20 claims
- 1271US12108604B2Vertical transistor fabrication for memory applicationsAPPLIED MATERIALS INC·Filed 2021·Granted Oct 1, 2024·0 cites·10 claims
- 1370US8481396B2Memory cell that includes a carbon-based reversible resistance switching element compatible with a steering element, and methods of forming the sameXU HUIWEN·Filed 2010·Granted Jul 9, 2013·2 cites·17 claims
- 1467US6992346B2Integrated circuit devices with metal-insulator-metal capacitorsSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jan 31, 2006·9 cites·28 claims
- 1564US11705337B2Tungsten defluorination by high pressure treatmentAPPLIED MATERIALS INC·Filed 2019·Granted Jul 18, 2023·0 cites·22 claims
- 1663US11384428B2Carbon layer covered mask in 3D applicationsAPPLIED MATERIALS INC·Filed 2020·Granted Jul 12, 2022·0 cites·20 claims
- 1762US11622489B23-D NAND control gate enhancementAPPLIED MATERIALS INC·Filed 2021·Granted Apr 4, 2023·0 cites·9 claims
- 1862US10879177B2PVD deposition and anneal of multi-layer metal-dielectric filmAPPLIED MATERIALS INC·Filed 2015·Granted Dec 29, 2020·1 cites·19 claims
- 1959US11515324B23D NAND structures with decreased pitchAPPLIED MATERIALS INC·Filed 2019·Granted Nov 29, 2022·0 cites·17 claims
- 2057US11127760B2Vertical transistor fabrication for memory applicationsAPPLIED MATERIALS INC·Filed 2019·Granted Sep 21, 2021·0 cites·20 claims
- 2157US2024072142A1Semiconductor device and method of manufacturing the sameSEMES CO LTD·Filed 2023·Application pending·0 cites
- 2256US10714388B2Method and apparatus for depositing cobalt in a featureAPPLIED MATERIALS INC·Filed 2018·Granted Jul 14, 2020·0 cites·13 claims
- 2353US2024179885A1Method of fabricating semiconductor deviceSEMES CO LTD·Filed 2023·Application pending·0 cites
- 2453US2024105456A1Method of forming semiconductor device and substrate processing system for forming semiconductor deviceSEMES CO LTD·Filed 2023·Application pending·0 cites
- 2552US2024186135A1Apparatus and method for processing substrate using supercritical fluidSEMES CO LTD·Filed 2023·Application pending·0 cites
- 2651US12342535B2Memory forming method and memoryCHANGXIN MEMORY TECH INC·Filed 2020·Granted Jun 24, 2025·0 cites·6 claims
- 2751US2024183037A1Apparatus and method for processing substrate using supercritical fluidSEMES CO LTD·Filed 2023·Application pending·0 cites
- 2851US2024183030A1Substrate treatment apparatus using supercritical fluidSEMES CO LTD·Filed 2023·Application pending·0 cites
- 2949US2024064967A1Semiconductor device and method of manufacturing the sameSEMES CO LTD·Filed 2023·Application pending·0 cites
- 3048US12178036B2Method for forming memory and memoryCHANGXIN MEMORY TECH INC·Filed 2021·Granted Dec 24, 2024·0 cites·7 claims
- 3148US2006060907A1Methods of forming integrated circuit devices with metal-insulator-metal capacitorsKIM KI-CHUL·Filed 2005·Application pending·0 cites
- 3247US12127397B2Memory device and method for forming the sameCHANGXIN MEMORY TECH INC·Filed 2021·Granted Oct 22, 2024·0 cites·10 claims
- 3347US2024213041A1Substrate processing deviceSEMES CO LTD·Filed 2023·Application pending·0 cites
- 3440US10446392B2Self-aligned nanodots for 3D NAND flash memoryAPPLIED MATERIALS INC·Filed 2018·Granted Oct 15, 2019·0 cites·1 claims
- 3536US10825681B23D CTF integration using hybrid charge trap layer of sin and self aligned SiGe nanodotAPPLIED MATERIALS INC·Filed 2017·Granted Nov 3, 2020·0 cites·18 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →