Inventor · disambiguated record
Norikazu Ohshima
Also filed as: OHSHIMA NORIKAZU
32 granted patents·2 pending applications·235 citations·filing 2006–2014
97Inventor score
Top patents by PatentIndex Score
34 records- 0192US7929342B2Magnetic memory cell, magnetic random access memory, and data read/write method for magnetic random access memoryNEC CORP·Filed 2006·Granted Apr 19, 2011·29 cites·43 claims
- 0290US8040724B2Magnetic domain wall random access memoryNEC CORP·Filed 2008·Granted Oct 18, 2011·22 cites·15 claims
- 0389US8379429B2Domain wall motion element and magnetic random access memoryNEC CORP·Filed 2009·Granted Feb 19, 2013·20 cites·15 claims
- 0488US8830735B2Magnetic memory including memory cells incorporating data recording layer with perpendicular magnetic anisotropy filmKARIYADA EIJI·Filed 2011·Granted Sep 9, 2014·10 cites·5 claims
- 0587US8120127B2Magnetic random access memory and method of manufacturing the sameNAGAHARA KIYOKAZU·Filed 2008·Granted Feb 21, 2012·19 cites·9 claims
- 0685US8154913B2Magnetoresistance effect element and magnetic random access memoryFUKAMI SHUNSUKE·Filed 2008·Granted Apr 10, 2012·11 cites·20 claims
- 0784US9379312B2Magnetoresistive effect element and magnetic random access memory using the sameSUGIBAYASHI TADAHIKO·Filed 2010·Granted Jun 28, 2016·7 cites·9 claims
- 0881US8559214B2Magnetic memory device and magnetic random access memoryFUKAMI SHUNSUKE·Filed 2009·Granted Oct 15, 2013·12 cites·23 claims
- 0980US8194436B2Magnetic random access memory, write method therefor, and magnetoresistance effect elementFUKAMI SHUNSUKE·Filed 2008·Granted Jun 5, 2012·8 cites·17 claims
- 1079US8923042B2Magnetic random access memoryNEC CORP·Filed 2013·Granted Dec 30, 2014·3 cites·3 claims
- 1179US8351249B2Magnetic random access memoryNEC CORP·Filed 2007·Granted Jan 8, 2013·6 cites·3 claims
- 1278US8174873B2Magnetic random access memory and initializing method for the sameSUZUKI TETSUHIRO·Filed 2008·Granted May 8, 2012·11 cites·13 claims
- 1377US8547733B2Magnetic random access memoryISHIWATA NOBUYUKI·Filed 2012·Granted Oct 1, 2013·3 cites·3 claims
- 1477US8526222B2Magnetic random access memoryISHIWATA NOBUYUKI·Filed 2012·Granted Sep 3, 2013·3 cites·3 claims
- 1576US8120950B2Semiconductor deviceFUKAMI SHUNSUKE·Filed 2009·Granted Feb 21, 2012·10 cites·14 claims
- 1673US8174086B2Magnetoresistive element, and magnetic random access memoryFUKAMI SHUNSUKE·Filed 2008·Granted May 8, 2012·8 cites·14 claims
- 1772US8687414B2Magnetic memory element and magnetic random access memoryNAGAHARA KIYOKAZU·Filed 2009·Granted Apr 1, 2014·8 cites·18 claims
- 1870US8791534B2Magnetic memory device and magnetic memoryFUKAMI SHUNSUKE·Filed 2011·Granted Jul 29, 2014·4 cites·14 claims
- 1970US8592930B2Magnetic memory element, magnetic memory and initializing methodFUKAMI SHUNSUKE·Filed 2010·Granted Nov 26, 2013·4 cites·20 claims
- 2066US8159872B2Magnetic random access memoryFUKAMI SHUNSUKE·Filed 2009·Granted Apr 17, 2012·8 cites·14 claims
- 2165US8363461B2Magnetic random access memory, method of initializing magnetic random access memory and method of writing magnetic random access memoryNEC CORP·Filed 2009·Granted Jan 29, 2013·5 cites·20 claims
- 2265US8315087B2Magnetic random access memoryKATOU YUUKOU·Filed 2008·Granted Nov 20, 2012·6 cites·20 claims
- 2363US8514616B2Magnetic memory element and magnetic memoryISHIWATA NOBUYUKI·Filed 2010·Granted Aug 20, 2013·3 cites·18 claims
- 2460US8300456B2Magnetic random access memory and method of manufacturing the sameHONJOU HIROAKI·Filed 2007·Granted Oct 30, 2012·5 cites·8 claims
- 2560US8149615B2Magnetic random access memoryFUKAMI SHUNSUKE·Filed 2009·Granted Apr 3, 2012·4 cites·10 claims
- 2652US8994130B2Magnetic memory element and magnetic memoryFUKAMI SHUNSUKE·Filed 2010·Granted Mar 31, 2015·1 cites·16 claims
- 2750US8238135B2MRAM utilizing free layer having fixed magnetization regions with larger damping coefficient than the switching regionSUZUKI TETSUHIRO·Filed 2008·Granted Aug 7, 2012·2 cites·9 claims
- 2850US2014346518A1Magnetic memory including memory cells incorporating data recording layer with perpendicular magnetic anisotropy filmRENESAS ELECTRONICS CORP·Filed 2014·Application pending·0 cites
- 2948US8787076B2Magnetic memory and method of manufacturing the sameFUKAMI SHUNSUKE·Filed 2009·Granted Jul 22, 2014·1 cites·11 claims
- 3047US8565011B2Method of initializing magnetic memory elementFUKAMI SHUNSUKE·Filed 2009·Granted Oct 22, 2013·1 cites·15 claims
- 3147US8477528B2Magnetic memory cell and magnetic random access memoryHONDA TAKESHI·Filed 2007·Granted Jul 2, 2013·1 cites·1 claims
- 3242US8737119B2Magnetic memory cell and magnetic random access memoryHONDA TAKESHI·Filed 2012·Granted May 27, 2014·0 cites·20 claims
- 3342US2012199470A1Mtj film and method for manufacturing the sameMORI KAORU·Filed 2012·Application pending·0 cites
- 3439US8537604B2Magnetoresistance element, MRAM, and initialization method for magnetoresistance elementSUZUKI TETSUHIRO·Filed 2009·Granted Sep 17, 2013·0 cites·19 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →