Magnetic memory including memory cells incorporating data recording layer with perpendicular magnetic anisotropy film

Abstract

A magnetic memory includes a magnetic memory, including a ferromagnetic underlayer including a magnetic material, a non-magnetic intermediate layer disposed on the underlayer, a ferromagnetic data recording layer formed on the intermediate layer and having a perpendicular magnetic anisotropy, a reference layer connected to the data recording layer across a non-magnetic layer, and first and second magnetization fixed layers disposed in contact with a bottom face of the underlayer. The data recording layer includes a magnetization free region having a reversible magnetization and opposed to the reference layer, a first magnetization fixed region coupled to a first border of the magnetization free layer and having a magnetization fixed in a first direction, and a second magnetization fixed region coupled to a second border of the magnetization free layer and having a magnetization fixed in a second direction opposite to the first direction.

What is claimed is: 
     
         1 . A magnetic memory, comprising:
 a ferromagnetic underlayer comprising a magnetic material;   a non-magnetic intermediate layer disposed on said underlayer;   a ferromagnetic data recording layer formed on said intermediate layer and having a perpendicular magnetic anisotropy;   a reference layer connected to said data recording layer across a non-magnetic layer; and   first and second magnetization fixed layers disposed in contact with a bottom face of said underlayer,   wherein said data recording layer includes:
 a magnetization free region having a reversible magnetization and opposed to said reference layer; 
 a first magnetization fixed region coupled to a first border of said magnetization free layer and having a magnetization fixed in a first direction; and 
 a second magnetization fixed region coupled to a second border of said magnetization free layer and having a magnetization fixed in a second direction opposite to said first direction, and 
   wherein said intermediate layer comprises a Ta film having a thickness of 0.1 to 2.0 nm.   
     
     
         2 . The magnetic memory according to  claim 1 , wherein said underlayer is amorphous or includes a microcrystalline structure. 
     
     
         3 . The magnetic memory according to  claim 1 , wherein said underlayer includes at least one of Ni, Fe, and Co as a major constitution, and further includes at least one non-magnetic element selected from the group consisting of Zr, Hf, Ti, V, Nb, Ta, W, B, and N. 
     
     
         4 . The magnetic memory according to  claim 1 , wherein said data recording layer comprises n film stacks in each of which first and second layers are layered, where n is a natural number,
 wherein said first layer includes at least one material selected from the group consisting of Fe, Co, and Ni, and   wherein said second layer comprises a material different from that of said first layer and includes at least one material selected from the group consisting of Fe, Co, and Ni.