Inventor · disambiguated record
Junko Kobayashi
Also filed as: KOBAYASHI JUNKO
8 granted patents·2 pending applications·151 citations·filing 1996–2020
87Inventor score
Top patents by PatentIndex Score
10 records- 0195US11069525B2Methods for using remote plasma chemical vapor deposition (RP-CVD) and sputtering deposition to grow layers in light emitting devicesLUMILEDS LLC·Filed 2020·Granted Jul 20, 2021·3 cites·15 claims
- 0295US11069524B2Methods for using remote plasma chemical vapor deposition (RP-CVD) and sputtering deposition to grow layers in light emitting devicesLUMILEDS LLC·Filed 2020·Granted Jul 20, 2021·3 cites·16 claims
- 0393US10236409B2Methods for using remote plasma chemical vapor deposition (RP-CVD) and sputtering deposition to grow layers in light emitting devicesLUMILEDS LLC·Filed 2017·Granted Mar 19, 2019·6 cites·31 claims
- 0493US6900067B2Growth of III-nitride films on mismatched substrates without conventional low temperature nucleation layersLUMILEDS LIGHTING LLC·Filed 2002·Granted May 31, 2005·79 cites·23 claims
- 0592US10622206B2Methods for using remote plasma chemical vapor deposition (RP-CVD) and sputtering deposition to grow layers in light emitting devicesLUMILEDS LLC·Filed 2019·Granted Apr 14, 2020·5 cites·19 claims
- 0677US6683327B2Nucleation layer for improved light extraction from light emitting devicesLUMILEDS LIGHTING LLC·Filed 2001·Granted Jan 27, 2004·30 cites·26 claims
- 0764US5741601APolyamide film and process for producing the sameUNITIKA LTD·Filed 1996·Granted Apr 21, 1998·24 cites·8 claims
- 0860US7906357B2P-type layer for a III-nitride light emitting deviceKONINKL PHILIPS ELECTRONICS NV·Filed 2006·Granted Mar 15, 2011·1 cites·15 claims
- 0951US2011121358A1P-type layer for a iii-nitride light emitting deviceKONINKL PHILIPS ELECTRONICS NV·Filed 2011·Application pending·0 cites
- 1040US2004246566A1Optical transmission systemFiled 2004·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →