Inventor · disambiguated record
Chiung-Sheng Hsiung
Also filed as: HSIUNG CHIUNG-SHENG
8 granted patents·6 pending applications·513 citations·filing 1999–2005
88Inventor score
Top patents by PatentIndex Score
14 records- 0197US6174812B1Copper damascene technology for ultra large scale integration circuitsUNITED MICROELECTRONICS CORP·Filed 1999·Granted Jan 16, 2001·405 cites·12 claims
- 0287US6559004B1Method for forming three dimensional semiconductor structure and three dimensional capacitorUNITED MICROELECTRONICS CORP·Filed 2001·Granted May 6, 2003·51 cites·15 claims
- 0378US6750129B2Process for forming fusible linksINFINEON TECHNOLOGIES AG·Filed 2002·Granted Jun 15, 2004·27 cites·27 claims
- 0464US6583489B2Method for forming interconnect structure with low dielectric constantUNITED MICROELECTRONICS CORP·Filed 2002·Granted Jun 24, 2003·10 cites·8 claims
- 0556US6617234B2Method of forming metal fuse and bonding padUNITED MICROELECTRONICS CORP·Filed 2001·Granted Sep 9, 2003·13 cites·18 claims
- 0647US6806182B2Method for eliminating via resistance shift in organic ILDIBM·Filed 2002·Granted Oct 19, 2004·2 cites·9 claims
- 0746US7179732B2Interconnection structure and fabrication method thereofUNITED MICROELECTRONICS CORP·Filed 2004·Granted Feb 20, 2007·3 cites·14 claims
- 0844US6890851B2Interconnection structure and fabrication method thereofUNITED MICROELECTRONICS CORP·Filed 2003·Granted May 10, 2005·2 cites·12 claims
- 0938US2009004372A1Electroless Niwp Adhesion and Capping Layers for Tft Copper Gate ProcessNASU AKINOBU·Filed 2005·Application pending·0 cites
- 1037US2004106273A1Interconnect structure and method for manufacturing the sameUNITED MICROELECTRONICS CORP·Filed 2003·Application pending·0 cites
- 1137US2004105968A1Interconnect structure and method for manufacturing the sameUNITED MICROELECTRONICS CORP·Filed 2002·Application pending·0 cites
- 1237US2002155261A1Method for forming interconnect structure with low dielectric constantFiled 2001·Application pending·0 cites
- 1335US2002182857A1Damascene process in intergrated circuit fabricationFiled 2001·Application pending·0 cites
- 1429US2002045345A1Enhance performance of copper damascene process by embedding conformal tin layerFiled 1999·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →