Inventor · disambiguated record
Toshie Kutsunai
Also filed as: KUTSUNAI TOSHIE
21 granted patents·7 pending applications·192 citations·filing 1998–2012
95Inventor score
Files withMATSUSHITA ELECTRIC INDUSTRIAL CO LTD17MATSUSHITA ELECTRONICS CORP3PANASONIC CORP3ITOU SATORU2KUTSUNAI TOSHIE1
Top patents by PatentIndex Score
28 records- 0193US6590252B2Semiconductor device with oxygen diffusion barrier layer termed from composite nitrideMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Granted Jul 8, 2003·57 cites·11 claims
- 0283US6750492B2Semiconductor memory with hydrogen barrierMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2002·Granted Jun 15, 2004·27 cites·13 claims
- 0372US8907425B2Semiconductor deviceITOU SATORU·Filed 2012·Granted Dec 9, 2014·5 cites·15 claims
- 0471US6239462B1Semiconductor capacitive device having improved anti-diffusion properties and a method of making the sameMATSUSHITA ELECTRONICS CORP·Filed 1998·Granted May 29, 2001·24 cites·5 claims
- 0567US6737697B2Semiconductor device and method and system for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Granted May 18, 2004·9 cites·4 claims
- 0667US6174822B1Semiconductor device and method for fabricating the sameMATSUSHITA ELECTRONICS CORP·Filed 1998·Granted Jan 16, 2001·24 cites·17 claims
- 0762US7456455B2Semiconductor memory device and method for fabricating the samePANASONIC CORP·Filed 2006·Granted Nov 25, 2008·2 cites·11 claims
- 0862US7060552B2Memory device with hydrogen-blocked ferroelectric capacitorMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted Jun 13, 2006·8 cites·12 claims
- 0960US7326990B2Semiconductor device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2006·Granted Feb 5, 2008·1 cites·12 claims
- 1059US6939725B2Method of fabricating semiconductor device with capacitor covered by a TEOS-03 filmMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted Sep 6, 2005·5 cites·23 claims
- 1158US6781177B2Semiconductor device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Aug 24, 2004·6 cites·20 claims
- 1258US6602721B2Method for fabricating ferroelectric memory device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Granted Aug 5, 2003·5 cites·8 claims
- 1354US8604554B2Semiconductor deviceITOU SATORU·Filed 2012·Granted Dec 10, 2013·1 cites·15 claims
- 1452US6809000B2Semiconductor device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Granted Oct 26, 2004·4 cites·5 claims
- 1549US2006124983A1Semiconductor device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2006·Application pending·0 cites
- 1648US7557011B2Semiconductor device and method for fabricating the samePANASONIC CORP·Filed 2005·Granted Jul 7, 2009·0 cites·18 claims
- 1748US7180122B2Semiconductor device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted Feb 20, 2007·2 cites·6 claims
- 1848US6753566B2Semiconductor device with an oxygen diffusion barrier layer formed from a composite nitrideMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Jun 22, 2004·2 cites·11 claims
- 1947US7053436B2Semiconductor device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted May 30, 2006·2 cites·10 claims
- 2045US6849887B2Semiconductor device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1998·Granted Feb 1, 2005·8 cites·16 claims
- 2144US2009250787A1Semiconductor storage device and manufacturing method of the sameKUTSUNAI TOSHIE·Filed 2009·Application pending·0 cites
- 2244US2005087788A1Semiconductor device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Application pending·0 cites
- 2343US6963095B2Ferroelectric memory device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Nov 8, 2005·0 cites·9 claims
- 2443US2005082638A1Semiconductor device and method for fabricating the sameFiled 2004·Application pending·0 cites
- 2540US6723637B2Semiconductor device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Apr 20, 2004·0 cites·4 claims
- 2639US2013015522A1Semiconductor devicePANASONIC CORP·Filed 2012·Application pending·0 cites
- 2739US2005045990A1Semiconductor device and method for fabricating the sameMATSUSHITA ELECTRONICS CORP·Filed 2004·Application pending·0 cites
- 2837US2002149082A1Semiconductor device and method for fabricating the sameFiled 2002·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →