Inventor · disambiguated record
Guangcai Xing
Also filed as: XING GUANGCAI
7 granted patents·3 pending applications·438 citations·filing 1998–2012
89Inventor score
Top patents by PatentIndex Score
10 records- 0193US6450116B1Apparatus for exposing a substrate to plasma radicalsAPPLIED MATERIALS INC·Filed 1999·Granted Sep 17, 2002·114 cites·30 claims
- 0292US6037273AMethod and apparatus for insitu vapor generationAPPLIED MATERIALS INC·Filed 1998·Granted Mar 14, 2000·139 cites·28 claims
- 0388US6159866AMethod for insitu vapor generation for forming an oxide on a substrateAPPLIED MATERIALS INC·Filed 2000·Granted Dec 12, 2000·35 cites·4 claims
- 0487US7341907B2Single wafer thermal CVD processes for hemispherical grained silicon and nano-crystalline grain-sized polysiliconAPPLIED MATERIALS INC·Filed 2005·Granted Mar 11, 2008·16 cites·20 claims
- 0586US8236706B2Method and apparatus for growing thin oxide films on silicon while minimizing impact on existing structuresPEUSE BRUCE W·Filed 2008·Granted Aug 7, 2012·14 cites·11 claims
- 0685US6114258AMethod of oxidizing a substrate in the presence of nitride and oxynitride filmsAPPLIED MATERIALS INC·Filed 1998·Granted Sep 5, 2000·95 cites·24 claims
- 0784US6410456B1Method and apparatus for insitu vapor generationAPPLIED MATERIALS INC·Filed 2000·Granted Jun 25, 2002·25 cites·16 claims
- 0845US2012298039A1Method and apparatus for growing thin oxide films on silicon while minimizing impact on existing structuresPEUSE BRUCE W·Filed 2012·Application pending·0 cites
- 0940US2002136831A1Method and apparatus for insitu vapor generationFiled 2002·Application pending·0 cites
- 1031US2003124873A1Method of annealing an oxide filmFiled 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →