Inventor · disambiguated record
Roy Iggulden
Also filed as: IGGULDEN ROY · IGGULDEN ROY C · IGGULDEN ROY CHARLES
22 granted patents·5 pending applications·515 citations·filing 1998–2007
96Inventor score
Top patents by PatentIndex Score
27 records- 0197US6383920B1Process of enclosing via for improved reliability in dual damascene interconnectsIBM·Filed 2001·Granted May 7, 2002·179 cites·27 claims
- 0284US6444565B1Dual-rie structure for via/line interconnectionsIBM·Filed 2001·Granted Sep 3, 2002·34 cites·20 claims
- 0383US6218279B1Vertical fuse and method of fabricationINFINEON TECHNOLOGIES CORP·Filed 2000·Granted Apr 17, 2001·31 cites·24 claims
- 0482US7560375B2Gas dielectric structure forming methodsIBM·Filed 2004·Granted Jul 14, 2009·34 cites·12 claims
- 0577US6734097B2Liner with poor step coverage to improve contact resistance in W contactsINFINEON TECHNOLOGIES AG·Filed 2001·Granted May 11, 2004·27 cites·14 claims
- 0675US6252292B1Vertical electrical cavity-fuseIBM CORP·Filed 1999·Granted Jun 26, 2001·52 cites·21 claims
- 0773US6448173B1Aluminum-based metallization exhibiting reduced electromigration and method thereforIBM·Filed 2000·Granted Sep 10, 2002·21 cites·12 claims
- 0873US6242789B1Vertical fuse and method of fabricationINFINEON TECHNOLOGIES CORP·Filed 1999·Granted Jun 5, 2001·38 cites·16 claims
- 0972US7287325B2Method of forming interconnect structure or interconnect and via structures using post chemical mechanical polishingIBM·Filed 2005·Granted Oct 30, 2007·3 cites·7 claims
- 1071US6887785B1Etching openings of different depths using a single mask layer method and structureIBM·Filed 2004·Granted May 3, 2005·17 cites·17 claims
- 1168US7119545B2Capacitive monitors for detecting metal extrusion during electromigrationIBM·Filed 2004·Granted Oct 10, 2006·11 cites·11 claims
- 1261US6433436B1Dual-RIE structure for via/line interconnectionsIBM·Filed 1999·Granted Aug 13, 2002·22 cites·10 claims
- 1352US6057236ACVD/PVD method of filling structures using discontinuous CVD AL linerIBM·Filed 1998·Granted May 2, 2000·17 cites·13 claims
- 1450US2007120259A1Detection of residual liner materials after polishing in damascene processFILIPPI RONALD G·Filed 2007·Application pending·0 cites
- 1549US8465657B2Post chemical mechanical polishing etch for improved time dependent dielectric breakdown reliabilityCHANDA KAUSHIK·Filed 2007·Granted Jun 18, 2013·0 cites·21 claims
- 1649US6870263B1Device interconnectionINFINEON TECHNOLOGIES AG·Filed 1998·Granted Mar 22, 2005·15 cites·17 claims
- 1745US6635564B1Semiconductor structure and method of fabrication including forming aluminum columnsINFINEON TECHNOLOGIES AG·Filed 2000·Granted Oct 21, 2003·2 cites·7 claims
- 1844US7361584B2Detection of residual liner materials after polishing in damascene processIBM·Filed 2004·Granted Apr 22, 2008·0 cites·22 claims
- 1943US7473636B2Method to improve time dependent dielectric breakdownIBM·Filed 2006·Granted Jan 6, 2009·0 cites·14 claims
- 2039US2005116342A1Device interconnectionFiled 2004·Application pending·0 cites
- 2138US2006001162A1Nitride and polysilicon interface with titanium layerSCHUTZ RONALD J·Filed 2005·Application pending·0 cites
- 2236US6413866B1Method of forming a solute-enriched layer in a substrate surface and article formed therebyIBM·Filed 2000·Granted Jul 2, 2002·0 cites·16 claims
- 2336US6361880B1CVD/PVD/CVD/PVD fill processIBM·Filed 1999·Granted Mar 26, 2002·6 cites·5 claims
- 2436US6136709AMetal line deposition processINFINEON TECHNOLOGIES CORP·Filed 1999·Granted Oct 24, 2000·6 cites·28 claims
- 2535US6960306B2Low Cu percentages for reducing shorts in AlCu linesIBM·Filed 2002·Granted Nov 1, 2005·0 cites·10 claims
- 2634US2004155268A1Method and apparatus for improving the electrical resistance of conductive pathsINFINEON TECHNOLOGIES CORP·Filed 2003·Application pending·0 cites
- 2729US2002016050A1Heat-up time reduction before metal depositionFiled 1999·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →