Inventor · disambiguated record
Masamichi Azuma
Also filed as: AZUMA MASAMICHI
43 granted patents·2 pending applications·1,183 citations·filing 1993–2004
98Inventor score
Top patents by PatentIndex Score
45 records- 0190US6704608B1Portable body used in two way, communication system, communication method, terminal, computer-readable recorded medium on which program is recordedMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1999·Granted Mar 9, 2004·105 cites·11 claims
- 0287US6204111B1Fabrication method of capacitor for integrated circuitMATSUSHITA ELECTRONICS CORP·Filed 1999·Granted Mar 20, 2001·60 cites·4 claims
- 0387US5822175AEncapsulated capacitor structure having a dielectric interlayerMATSUSHITA ELECTRONICS CORP·Filed 1997·Granted Oct 13, 1998·66 cites·8 claims
- 0486US6214660B1Capacitor for integrated circuit and its fabrication methodMATSUSHITA ELECTRONICS CORP·Filed 1998·Granted Apr 10, 2001·58 cites·3 claims
- 0586US5708302ABottom electrode structure for dielectric capacitorsSYMETRIX CORP·Filed 1995·Granted Jan 13, 1998·65 cites·20 claims
- 0685US5962085AMisted precursor deposition apparatus and method with improved mist and mist flowSYMETRIX CORP·Filed 1996·Granted Oct 5, 1999·75 cites·56 claims
- 0784US6537830B1Method of making ferroelectric FET with polycrystalline crystallographically oriented ferroelectric materialSYMETRIX CORP·Filed 2000·Granted Mar 25, 2003·31 cites·34 claims
- 0884US6404003B1Thin film capacitors on silicon germanium substrateSYMETRIX CORP·Filed 1999·Granted Jun 11, 2002·46 cites·26 claims
- 0983US5614018AIntegrated circuit capacitors and process for making the sameSYMETRIX CORP·Filed 1994·Granted Mar 25, 1997·78 cites·28 claims
- 1079US5955754AIntegrated circuits having mixed layered superlattice materials and precursor solutions for use in a process of making the sameSYMETRIX CORP·Filed 1995·Granted Sep 21, 1999·45 cites·34 claims
- 1179US5612082AProcess for making metal oxidesSYMETRIX CORP·Filed 1994·Granted Mar 18, 1997·67 cites·40 claims
- 1276US5814849AThin films of ABO3 with excess B-site modifiers and method of fabricating integrated circuits with sameSYMETRIX CORP·Filed 1997·Granted Sep 29, 1998·38 cites·2 claims
- 1371US6372286B1Barium strontium titanate integrated circuit capacitors and process for making the sameSYMETRIX CORP·Filed 1994·Granted Apr 16, 2002·40 cites·8 claims
- 1471US5929475ACapacitor for integrated circuit and its fabrication methodMATSUSHITA ELECTRONICS CORP·Filed 1995·Granted Jul 27, 1999·26 cites·2 claims
- 1569US6886753B2Dual-purpose portable card, a communication system, a communication method, a terminal apparatus, and a computer-readable record medium recording a programMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted May 3, 2005·10 cites·3 claims
- 1669US6840443B2Dual purpose portable card, a communication system, a communication method, a terminal apparatus, and a computer-readable record medium recording a programMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted Jan 11, 2005·10 cites·3 claims
- 1769US5723361AThin films of ABO3 with excess A-site and B-site modifiers and method of fabricating integrated circuits with sameSYMETRIX CORP·Filed 1994·Granted Mar 3, 1998·44 cites·22 claims
- 1869US5645976ACapacitor apparatus and method of manufacture of sameMATSUSHITA ELECTRONICS CORP·Filed 1994·Granted Jul 8, 1997·29 cites·13 claims
- 1964US6639262B2Metal oxide integrated circuit on silicon germanium substrateSYMETRIX CORP·Filed 2001·Granted Oct 28, 2003·7 cites·37 claims
- 2064US6310373B1Metal insulator semiconductor structure with polarization-compatible buffer layerSYMETRIX CORP·Filed 1995·Granted Oct 30, 2001·28 cites·11 claims
- 2164US5516363ASpecially doped precursor solutions for use in methods of producing doped ABO3 -type average perovskite thin-film capacitorsSYMETRIX CORP·Filed 1994·Granted May 14, 1996·36 cites·24 claims
- 2263US5690727AThin films of ABO3 with excess B-site modifiers and method of fabricating integrated circuits with sameSYMETRIX CORP·Filed 1997·Granted Nov 25, 1997·21 cites·4 claims
- 2360US6133050AUV radiation process for making electronic devices having low-leakage-current and low-polarization fatigueSYMETRIX CORP·Filed 1995·Granted Oct 17, 2000·19 cites·28 claims
- 2460US5803961AIntegrated circuits having mixed layered superlattice materials and precursor solutions for use in a process of making the sameSYMETRIX CORP·Filed 1996·Granted Sep 8, 1998·19 cites·23 claims
- 2554US5624707AMethod of forming ABO3 films with excess B-site modifiersSYMETRIX CORP·Filed 1994·Granted Apr 29, 1997·18 cites·17 claims
- 2652US6664115B2Metal insulator structure with polarization-compatible buffer layerSYMETRIX CORP·Filed 2001·Granted Dec 16, 2003·3 cites·7 claims
- 2752US6573111B2Method of making a semiconductor device with capacitor elementMATSUSHITA ELECTRONICS CORP·Filed 2002·Granted Jun 3, 2003·4 cites·4 claims
- 2852US6025619AThin films of ABO3 with excess A-site and B-site modifiers and method of fabricating integrated circuits with sameFiled 1997·Granted Feb 15, 2000·17 cites·4 claims
- 2951US6864146B2Metal oxide integrated circuit on silicon germanium substrateSYMETRIX CORP·Filed 2003·Granted Mar 8, 2005·2 cites·25 claims
- 3051US5972428AMethods and apparatus for material deposition using primerSYMETRIX CORP·Filed 1996·Granted Oct 26, 1999·16 cites·44 claims
- 3150US6447838B1Integrated circuit capacitors with barrier layer and process for making the sameSYMETRIX CORP·Filed 1995·Granted Sep 10, 2002·15 cites·19 claims
- 3247US5932281AMethod of manufacturing bi-layered ferroelectric thin filmMATSUSHITA ELECTRONICS CORP·Filed 1997·Granted Aug 3, 1999·15 cites·25 claims
- 3347US5909042AElectrical component having low-leakage current and low polarization fatigue made by UV radiation processSYMETRIX CORP·Filed 1996·Granted Jun 1, 1999·10 cites·6 claims
- 3446US5871853AUV radiation process for making electronic devices having low-leakage-current and low-polarization fatigueSYMETRIX CORP·Filed 1996·Granted Feb 16, 1999·9 cites·3 claims
- 3544US6033920AMethod of manufacturing a high dielectric constant capacitorMATSUSHITA ELECTRONICS CORP·Filed 1998·Granted Mar 7, 2000·9 cites·1 claims
- 3643US5828098ASemiconductor capacitor dielectric having various grain sizesMATSUSHITA ELECTRONICS CORP·Filed 1996·Granted Oct 27, 1998·8 cites·7 claims
- 3742US5620739AThin film capacitors on gallium arsenide substrate and process for making the sameSYMETRIX CORP·Filed 1994·Granted Apr 15, 1997·12 cites·16 claims
- 3841US6734456B2Ferroelectric film and semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2002·Granted May 11, 2004·0 cites·13 claims
- 3941US6285048B1Barium strontium titanate integrated circuit capacitors and process for making the sameSYMETRIX CORP·Filed 1993·Granted Sep 4, 2001·9 cites·13 claims
- 4040US5840110AIntegrated circuits having mixed layered superlattice materials and precursor solutions for use in a process of making the sameSYMETRIX CORP·Filed 1996·Granted Nov 24, 1998·6 cites·18 claims
- 4138US6468875B2Fabrication method of capacitor for integrated circuitMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Granted Oct 22, 2002·0 cites·5 claims
- 4238US2002109178A1Thin film capacitors on silicon germanium substrate and process for making the sameSYMETRIX CORP·Filed 2002·Application pending·0 cites
- 4336US5920574AMethod for accelerated test of semiconductor devicesMATSUSHITA ELECTRONICS CORP·Filed 1997·Granted Jul 6, 1999·5 cites·3 claims
- 4432US6327135B1Thin film capacitors on gallium arsenide substrateSYMETRIX CORP·Filed 1995·Granted Dec 4, 2001·2 cites·8 claims
- 4530US2002000589A1Semiconductor device with capacitor elements substantially free of titaniumFiled 1998·Application pending·0 cites
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