Semiconductor device with capacitor elements substantially free of titanium

Abstract

A semiconductor device includes: a silicon substrate; a MOS semiconductor device provided on the silicon substrate, the MOS semiconductor device including a silicide region on an outermost surface thereof; a first insulating film covering the MOS semiconductor device; a capacitor element provided on the first insulating film, the capacitor element comprising a lower electrode, an upper electrode, and a capacitor film interposed between the lower electrode and the upper electrode, and the capacitor film comprising a ferroelectric material; a second insulating film covering the first insulating film and the capacitor element; a contact hole provided in the first insulating film and the second insulating film over the MOS semiconductor device and the capacitor element; and an interconnection layer provided on the second insulating film for electrically connecting the MOS semiconductor device and the capacitor element to each other, wherein a bottom portion of the interconnection layer comprises a conductive material other than titanium.

What is claimed is:  
     
         1 . A semiconductor device, comprising: 
 a silicon substrate;    a MOS semiconductor device provided on the silicon substrate, the MOS semiconductor device including a silicide region on an outermost surface thereof;    a first insulating film covering the MOS semiconductor device;    a capacitor element provided on the first insulating film, the capacitor element comprising a lower electrode, an upper electrode, and a capacitor film interposed between the lower electrode and the upper electrode, and the capacitor film comprising a ferroelectric material;    a second insulating film covering the first insulating film and the capacitor element;    a contact hole provided in the first insulating film and the second insulating film over the MOS semiconductor device and the capacitor element; and    an interconnection layer provided on the second insulating film for electrically connecting the MOS semiconductor device and the capacitor element to each other, wherein a bottom portion of the interconnection layer comprises a conductive material other than titanium.    
     
     
         2 . A semiconductor device according to  claim 1 , wherein the silicide region comprises one of a titanium silicide, a cobalt silicide, a chromium silicide, a molybdenum silicide, a tungsten silicide, a tantalum silicide, a palladium silicide, a platinum silicide, a vanadium silicide, and a zirconium silicide.  
     
     
         3 . A semiconductor device according to  claim 1 , wherein the interconnection layer comprises one of a multilayer structure including a titanium nitride layer, an aluminum layer and a titanium nitride layer in this order from the silicon substrate; a multilayer structure including a tungsten nitride layer, an aluminum layer and a titanium nitride layer in this order from the silicon substrate; a multilayer structure including a tantalum nitride layer, an aluminum layer and a titanium nitride layer in this order from the silicon substrate; and a multilayer structure including a tungsten nitride layer, an aluminum layer and a titanium nitride layer in this order from the silicon substrate.  
     
     
         4 . A semiconductor device according to  claim 1 , wherein the upper electrode comprises an iridium oxide layer.