Inventor · disambiguated record
Kapil Kelkar
Also filed as: KELKAR KAPIL
12 granted patents·3 pending applications·22 citations·filing 2010–2024
86Inventor score
Files withINFINEON TECHNOLOGIES AMERICAS CORP9INT RECTIFIER CORP3HENSON TIMOTHY D1INFINEON TECHNOLOGIES AG1INFINEON TECHNOLOGIES AUSTRIA AG1
Top patents by PatentIndex Score
15 records- 0192US9620583B2Power semiconductor device with source trench and termination trench implantsINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2015·Granted Apr 11, 2017·13 cites·20 claims
- 0284US9202882B2Semiconductor device with a thick bottom field plate trench having a single dielectric and angled sidewallsINT RECTIFIER CORP·Filed 2014·Granted Dec 1, 2015·4 cites·20 claims
- 0374US9627328B2Semiconductor structure having integrated snubber resistanceINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2015·Granted Apr 18, 2017·2 cites·20 claims
- 0470US9299793B2Semiconductor device with a field plate trench having a thick bottom dielectricINT RECTIFIER CORP·Filed 2014·Granted Mar 29, 2016·1 cites·20 claims
- 0568US10593664B2Controlled resistance integrated snubber for power switching deviceINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2016·Granted Mar 17, 2020·1 cites·7 claims
- 0663US10374533B2Block commutation to reduce inverter losses for BLDC drivesINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2017·Granted Aug 6, 2019·1 cites·20 claims
- 0760US2025014972A1Package with clip directly connected to oblong electric connection element extending along mounting baseINFINEON TECHNOLOGIES AG·Filed 2024·Application pending·0 cites
- 0859US11217577B2Controlled resistance integrated snubber for power switching deviceINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2020·Granted Jan 4, 2022·0 cites·13 claims
- 0959US10483359B2Method of fabricating a power semiconductor deviceINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2017·Granted Nov 19, 2019·0 cites·8 claims
- 1059US9735241B2Semiconductor device with a field plate double trench having a thick bottom dielectricINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2014·Granted Aug 15, 2017·0 cites·4 claims
- 1150US9966464B2Method of forming a semiconductor structure having integrated snubber resistanceINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2017·Granted May 8, 2018·0 cites·19 claims
- 1249US2017213909A1Method for Fabricating a Shallow and Narrow Trench FETINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2017·Application pending·0 cites
- 1341US9818743B2Power semiconductor device with contiguous gate trenches and offset source trenchesINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2014·Granted Nov 14, 2017·0 cites·16 claims
- 1441US9653597B2Method for fabricating a shallow and narrow trench FET and related structuresHENSON TIMOTHY D·Filed 2010·Granted May 16, 2017·0 cites·5 claims
- 1533US2015325685A1Power Semiconductor Device with Low RDSON and High Breakdown VoltageINT RECTIFIER CORP·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →