Inventor · disambiguated record
Hossein Paravi
Also filed as: PARAVI HOSSEIN
3 granted patents·3 pending applications·5 citations·filing 2004–2012
59Inventor score
Top patents by PatentIndex Score
6 records- 0165US8278702B2High density trench field effect transistorPAN JAMES·Filed 2008·Granted Oct 2, 2012·2 cites·8 claims
- 0257US8003522B2Method for forming trenches with wide upper portion and narrow lower portionFAIRCHILD SEMICONDUCTOR·Filed 2008·Granted Aug 23, 2011·1 cites·24 claims
- 0347US2013026563A1Structures and methods for forming high density trench field effect transistorsFAIRCHILD SEMICONDUCTOR·Filed 2012·Application pending·0 cites
- 0442US7132715B2Semiconductor device having a spacer layer doped with slower diffusing atoms than substrateFAIRCHILD SEMICONDUCTOR·Filed 2004·Granted Nov 7, 2006·2 cites·38 claims
- 0542US2007059906A1Semiconductor device having a spacer layer doped with slower diffusing atoms than substrateWANG QI·Filed 2006·Application pending·0 cites
- 0635US2009050958A1Semiconductor device having a spacer layer doped with slower diffusing atoms than substrateWANG QI·Filed 2008·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →