Inventor · disambiguated record
Jeffrey A. Babcock
Also filed as: BABCOCK JEFFREY · BABCOCK JEFFREY A
52 granted patents·6 pending applications·1,346 citations·filing 2001–2022
98Inventor score
Files withTEXAS INSTRUMENTS INC37BABCOCK JEFFREY A11NAT SEMICONDUCTOR CORP3SHAFI ZIA ALAN2BABCOCK JEFFREY1
Top patents by PatentIndex Score
58 records- 0198US8129246B2Advanced CMOS using super steep retrograde wellsBABCOCK JEFFREY A·Filed 2011·Granted Mar 6, 2012·120 cites·1 claims
- 0298US7883977B2Advanced CMOS using super steep retrograde wellsTEXAS INSTRUMENTS INC·Filed 2009·Granted Feb 8, 2011·124 cites·4 claims
- 0398US7655523B2Advanced CMOS using super steep retrograde wellsTEXAS INSTRUMENTS INC·Filed 2007·Granted Feb 2, 2010·124 cites·10 claims
- 0498US7501324B2Advanced CMOS using super steep retrograde wellsTEXAS INSTRUMENTS INC·Filed 2006·Granted Mar 10, 2009·121 cites·9 claims
- 0598US7199430B2Advanced CMOS using super steep retrograde wellsTEXAS INSTRUMENTS INC·Filed 2006·Granted Apr 3, 2007·138 cites·3 claims
- 0698US7064399B2Advanced CMOS using super steep retrograde wellsTEXAS INSTRUMENTS INC·Filed 2001·Granted Jun 20, 2006·148 cites·5 claims
- 0796US8247300B2Control of dopant diffusion from buried layers in bipolar integrated circuitsBABCOCK JEFFREY A·Filed 2009·Granted Aug 21, 2012·97 cites·4 claims
- 0895US9633994B2BICMOS device having commonly defined gate shield in an ED-CMOS transistor and base in a bipolar transistorTEXAS INSTRUMENTS INC·Filed 2016·Granted Apr 25, 2017·11 cites·20 claims
- 0994US6407425B1Programmable neuron MOSFET on SOITEXAS INSTRUMENTS INC·Filed 2001·Granted Jun 18, 2002·87 cites·24 claims
- 1093US10269895B2Method for creating the high voltage complementary BJT with lateral collector on bulk substrate with resurf effectTEXAS INSTRUMENTS INC·Filed 2017·Granted Apr 23, 2019·7 cites·16 claims
- 1193US9633995B2Method of forming a gate shield in an ED-CMOS transistor and a base of a bipolar transistor using BICMOS technologiesTEXAS INSTRUMENTS INC·Filed 2016·Granted Apr 25, 2017·7 cites·20 claims
- 1291US6391707B1Method of manufacturing a zero mask high density metal/insulator/metal capacitorTEXAS INSTRUMENTS INC·Filed 2001·Granted May 21, 2002·62 cites·68 claims
- 1390US9741790B2Method for creating the high voltage complementary BJT with lateral collector on bulk substrate with resurf effectTEXAS INSTRUMENTS INC·Filed 2016·Granted Aug 22, 2017·5 cites·9 claims
- 1488US9306013B2Method of forming a gate shield in an ED-CMOS transistor and a base of a bipolar transistor using BICMOS technologiesTEXAS INSTRUMENTS INC·Filed 2014·Granted Apr 5, 2016·6 cites·1 claims
- 1586US8703568B2Advanced CMOS using super steep retrograde wellsBABCOCK JEFFREY A·Filed 2012·Granted Apr 22, 2014·4 cites·3 claims
- 1686US8299578B1High voltage bipolar transistor with bias shieldBABCOCK JEFFREY·Filed 2009·Granted Oct 30, 2012·17 cites·9 claims
- 1785US7422972B2On chip heating for electrical trimming of polysilicon and polysilicon-silicon-germanium resistors and electrically programmable fuses for integrated circuitsTEXAS INSTRUMENTS INC·Filed 2005·Granted Sep 9, 2008·13 cites·4 claims
- 1885US6958523B2On chip heating for electrical trimming of polysilicon and polysilicon-silicon-germanium resistors and electrically programmable fuses for integrated circuitsTEXAS INSTRUMENTS INC·Filed 2001·Granted Oct 25, 2005·38 cites·6 claims
- 1985US6646323B2Zero mask high density metal/insulator/metal capacitorTEXAS INSTRUMENTS INC·Filed 2001·Granted Nov 11, 2003·45 cites·41 claims
- 2083US6770952B2Integrated process for high voltage and high performance silicon-on-insulator bipolar devicesTEXAS INSTRUMENTS INC·Filed 2002·Granted Aug 3, 2004·29 cites·8 claims
- 2182US6660616B2P-i-n transit time silicon-on-insulator deviceTEXAS INSTRUMENTS INC·Filed 2002·Granted Dec 9, 2003·32 cites·6 claims
- 2276US6838348B2Integrated process for high voltage and high performance silicon-on-insulator bipolar devicesTEXAS INSTRUMENTS INC·Filed 2004·Granted Jan 4, 2005·18 cites·11 claims
- 2376US6465830B2RF voltage controlled capacitor on thick-film SOITEXAS INSTRUMENTS INC·Filed 2001·Granted Oct 15, 2002·20 cites·15 claims
- 2475US7902013B1Method of forming a semiconductor die with reduced RF attenuationNAT SEMICONDUCTOR CORP·Filed 2009·Granted Mar 8, 2011·5 cites·20 claims
- 2572US7919807B1Non-volatile memory cell with heating elementNAT SEMICONDUCTOR CORP·Filed 2007·Granted Apr 5, 2011·4 cites·11 claims
- 2671US11024649B2Integrated circuit with resurf region biasing under buried insulator layersTEXAS INSTRUMENTS INC·Filed 2020·Granted Jun 1, 2021·0 cites·20 claims
- 2770US6794237B2Lateral heterojunction bipolar transistorTEXAS INSTRUMENTS INC·Filed 2002·Granted Sep 21, 2004·13 cites·10 claims
- 2868US7598575B1Semiconductor die with reduced RF attenuationNAT SEMICONDUCTOR CORP·Filed 2007·Granted Oct 6, 2009·3 cites·22 claims
- 2964US10636815B2Integrated circuit with resurf region biasing under buried insulator layersTEXAS INSTRUMENTS INC·Filed 2019·Granted Apr 28, 2020·0 cites·20 claims
- 3064US6680504B2Method for constructing a metal oxide semiconductor field effect transistorTEXAS INSTRUMENTS INC·Filed 2001·Granted Jan 20, 2004·11 cites·7 claims
- 3162US8183621B2Non-volatile memory cell having a heating element and a substrate-based control gateBABCOCK JEFFREY A·Filed 2011·Granted May 22, 2012·1 cites·19 claims
- 3261US6894366B2Bipolar junction transistor with a counterdoped collector regionTEXAS INSTRUMENTS INC·Filed 2001·Granted May 17, 2005·9 cites·5 claims
- 3360US8648391B2SiGe heterojunction bipolar transistor with an improved breakdown voltage-cutoff frequency productBABCOCK JEFFREY A·Filed 2012·Granted Feb 11, 2014·1 cites·6 claims
- 3460US8207559B2Schottky junction-field-effect-transistor (JFET) structures and methods of forming JFET structuresBABCOCK JEFFREY A·Filed 2009·Granted Jun 26, 2012·2 cites·2 claims
- 3557US10504921B2Integrated circuit with resurf region biasing under buried insulator layersTEXAS INSTRUMENTS INC·Filed 2017·Granted Dec 10, 2019·0 cites·16 claims
- 3657US9640611B2HV complementary bipolar transistors with lateral collectors on SOI with resurf regions under buried oxideTEXAS INSTRUMENTS INC·Filed 2014·Granted May 2, 2017·0 cites·7 claims
- 3757US9343459B2Method for creating the high voltage complementary BJT with lateral collector on bulk substrate with resurf effectTEXAS INSTRUMENTS INC·Filed 2014·Granted May 17, 2016·0 cites·7 claims
- 3857US7217322B2Method of fabricating an epitaxial silicon-germanium layer and an integrated semiconductor device comprising an epitaxial arsenic in-situ doped silicon-germanium layerTEXAS INSTRUMENTS INC·Filed 2004·Granted May 15, 2007·5 cites·15 claims
- 3955US12389642B2Semiconductor devices for high frequency applicationsTEXAS INSTRUMENTS INC·Filed 2022·Granted Aug 12, 2025·0 cites·41 claims
- 4054US7227241B2Integrated stacked capacitor and method of fabricating sameTEXAS INSTRUMENTS INC·Filed 2004·Granted Jun 5, 2007·4 cites·7 claims
- 4154US6806159B2Method for manufacturing a semiconductor device with sinker contact regionTEXAS INSTRUMENTS INC·Filed 2002·Granted Oct 19, 2004·6 cites·13 claims
- 4252US8669157B2Non-volatile memory cell having a heating element and a substrate-based control gateBABCOCK JEFFREY A·Filed 2012·Granted Mar 11, 2014·0 cites·6 claims
- 4351US7736986B2Integrated stacked capacitor and method of fabricating sameTEXAS INSTRUMENTS INC·Filed 2007·Granted Jun 15, 2010·0 cites·4 claims
- 4448US7164186B2Structure of semiconductor device with sinker contact regionTEXAS INSTRUMENTS INC·Filed 2004·Granted Jan 16, 2007·3 cites·8 claims
- 4548US6905932B2Method for constructing a metal oxide semiconductor field effect transistorTEXAS INSTRUMENTS INC·Filed 2003·Granted Jun 14, 2005·3 cites·13 claims
- 4645US8453494B2Gas detector that utilizes an electric field to assist in the collection and removal of gas moleculesBABCOCK JEFFREY A·Filed 2010·Granted Jun 4, 2013·0 cites·13 claims
- 4745US6774455B2Semiconductor device with a collector contact in a depressed well-regionTEXAS INSTRUMENTS INC·Filed 2002·Granted Aug 10, 2004·2 cites·9 claims
- 4843US8728920B2Schottky diode with control gate for optimization of the on state resistance, the reverse leakage, and the reverse breakdownSHAFI ZIA ALAN·Filed 2012·Granted May 20, 2014·0 cites·7 claims
- 4943US6927428B2Lateral heterojunction bipolar transistorTEXAS INSTRUMENTS INC·Filed 2004·Granted Aug 9, 2005·1 cites·7 claims
- 5042US2007018225A1Integrated Stacked Capacitor and Method of Fabricating SameDIRNECKER CHRISTOPH·Filed 2006·Application pending·0 cites
Showing the top 50 of 58 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →