Integrated Stacked Capacitor and Method of Fabricating Same

Abstract

An integrated stacked capacitor comprises a first capacitor film ( 46 ) of polycrystalline silicide (poly), a second capacitor film ( 48 ) and a first dielectric ( 26 ) sandwiched between the first capacitor film ( 46 ) and second capacitor film ( 48 ). A second dielectric ( 34 ) and a third capacitor film ( 50 ) are provided. The second dielectric ( 34 ) is sandwiched between the second capacitor film ( 48 ) and third capacitor film ( 50 ). A method for fabrication of an integrated stacked capacitor comprises the following sequence of steps: applying a polysilicide layer ( 20 ) to form the first capacitor film ( 46 ); applying a first dielectric ( 26 ); applying a first metallization layer ( 28 ) to form the second capacitor film ( 48 ); applying a second dielectric ( 34 ); and applying a second metallization layer ( 34 ) to form the third capacitor film ( 50 ).

1 - 14 . (canceled)  
   
   
       15 . An integrated stacked capacitor comprising: 
 a first capacitor film of polycrystalline silicide (poly);    a second capacitor film comprising a titanium-alloy;    a first dielectric sandwiched between said first capacitor film and said second capacitor film;    a second dielectric; and    a third capacitor film, wherein said second dielectric is sandwiched between said second capacitor film and said third capacitor film.