Inventor · disambiguated record
Glen L. Miles
Also filed as: MILES GLEN L · MILES GLEN LESTER
18 granted patents·2 pending applications·442 citations·filing 1986–2009
95Inventor score
Top patents by PatentIndex Score
20 records- 0191US6235597B1Semiconductor structure having reduced silicide resistance between closely spaced gates and method of fabricationIBM·Filed 1999·Granted May 22, 2001·111 cites·19 claims
- 0289US4983544ASilicide bridge contact processIBM·Filed 1986·Granted Jan 8, 1991·103 cites·24 claims
- 0387US5828131ALow temperature formation of low resistivity titanium silicideIBM·Filed 1996·Granted Oct 27, 1998·60 cites·6 claims
- 0481US5510295AMethod for lowering the phase transformation temperature of a metal silicideIBM·Filed 1993·Granted Apr 23, 1996·47 cites·31 claims
- 0570US6060358ADamascene NVRAM cell and method of manufactureIBM·Filed 1997·Granted May 9, 2000·30 cites·17 claims
- 0668US6660664B1Structure and method for formation of a blocked silicide resistorIBM·Filed 2000·Granted Dec 9, 2003·9 cites·22 claims
- 0767US6069040AFabricating a floating gate with field enhancement feature self-aligned to a grooveIBM·Filed 1998·Granted May 30, 2000·26 cites·16 claims
- 0864US6670263B2Method of reducing polysilicon depletion in a polysilicon gate electrode by depositing polysilicon of varying grain sizeIBM·Filed 2001·Granted Dec 30, 2003·9 cites·5 claims
- 0963US6893948B2Method of reducing polysilicon depletion in a polysilicon gate electrode by depositing polysilicon of varying grain sizeIBM·Filed 2003·Granted May 17, 2005·8 cites·17 claims
- 1060US8136084B2Arranging through silicon vias in IC layoutDEAN JR DONALD R·Filed 2009·Granted Mar 13, 2012·4 cites·14 claims
- 1157US6853032B2Structure and method for formation of a blocked silicide resistorIBM·Filed 2003·Granted Feb 8, 2005·4 cites·4 claims
- 1252US6509265B1Process for manufacturing a contact barrierIBM·Filed 2000·Granted Jan 21, 2003·4 cites·9 claims
- 1352US6180456B1Triple polysilicon embedded NVRAM cell and method thereofIBM·Filed 1999·Granted Jan 30, 2001·16 cites·12 claims
- 1449US6187679B1Low temperature formation of low resistivity titanium silicideIBM·Filed 1997·Granted Feb 13, 2001·9 cites·14 claims
- 1540US7714366B2CMOS transistor with a polysilicon gate electrode having varying grain sizeIBM·Filed 2004·Granted May 11, 2010·0 cites·4 claims
- 1639US2001009291A1Semiconductor structure having reduced silicide resistance between closely spaced gates and method of fabricationIBM·Filed 2001·Application pending·0 cites
- 1735US2002175413A1Method for utilizing tungsten barrier in contacts to silicide and structure produced therbyIBM·Filed 2001·Application pending·0 cites
- 1830US6250803B1Method for temperature measurement using dopant segregation into titanium silicideIBM·Filed 1999·Granted Jun 26, 2001·0 cites·16 claims
- 1930US6180521B1Process for manufacturing a contact barrierIBM·Filed 1999·Granted Jan 30, 2001·0 cites·11 claims
- 2026US6348419B1Modification of the wet characteristics of deposited layers and in-line controlINFINEON TECHNOLOGIES AG·Filed 1999·Granted Feb 19, 2002·2 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →