Inventor · disambiguated record
Oliver Aubel
Also filed as: AUBEL OLIVER
12 granted patents·5 pending applications·17 citations·filing 2006–2016
85Inventor score
Top patents by PatentIndex Score
17 records- 0176US9455232B2Semiconductor structure including a die seal leakage detection material, method for the formation thereof and method including a test of a semiconductor structureGLOBALFOUNDRIES INC·Filed 2014·Granted Sep 27, 2016·3 cites·16 claims
- 0269US8268679B2Semiconductor device comprising eFUSES of enhanced programming efficiencyAUBEL OLIVER·Filed 2009·Granted Sep 18, 2012·5 cites·13 claims
- 0363US7512506B2IC chip stress testingIBM·Filed 2007·Granted Mar 31, 2009·5 cites·14 claims
- 0462US8653624B2Semiconductor device comprising metal-based eFuses of enhanced programming efficiency by enhancing metal agglomeration and/or voidingGLOBALFOUNDRIES INC·Filed 2013·Granted Feb 18, 2014·2 cites·18 claims
- 0558US9349641B2Wafer with improved plating current distributionGLOBALFOUNDRIES INC·Filed 2014·Granted May 24, 2016·0 cites·18 claims
- 0654US9627317B2Wafer with improved plating current distributionGLOBALFOUNDRIES INC·Filed 2016·Granted Apr 18, 2017·0 cites·18 claims
- 0754US8174010B2Unified test structure for stress migration testsFEUSTEL FRANK·Filed 2007·Granted May 8, 2012·1 cites·19 claims
- 0849US9543199B2Long-term heat treated integrated circuit arrangements and methods for producing the sameINFINEON TECHNOLOGIES AG·Filed 2013·Granted Jan 10, 2017·0 cites·14 claims
- 0949US8153524B2Providing superior electromigration performance and reducing deterioration of sensitive low-k dielectrics in metallization systems of semiconductor devicesAUBEL OLIVER·Filed 2010·Granted Apr 10, 2012·1 cites·20 claims
- 1048US8314625B2Built-in compliance in test structures for leakage and dielectric breakdown of dielectric materials of metallization systems of semiconductor devicesAUBEL OLIVER·Filed 2009·Granted Nov 20, 2012·0 cites·19 claims
- 1146US2010133700A1Performance enhancement in metallization systems of microstructure devices by incorporating grain size increasing metal featuresWERNER THOMAS·Filed 2009·Application pending·0 cites
- 1244US9362239B2Vertical breakdown protection layerGLOBALFOUNDRIES INC·Filed 2014·Granted Jun 7, 2016·0 cites·20 claims
- 1341US8643183B2Long-term heat-treated integrated circuit arrangements and methods for producing the sameAUBEL OLIVER·Filed 2006·Granted Feb 4, 2014·0 cites·17 claims
- 1433US2016260794A1Coil inductorGLOBALFOUNDRIES INC·Filed 2015·Application pending·0 cites
- 1533US2012153479A1Performance Enhancement in Metallization Systems of Microstructure Devices by Incorporating an Intermediate Barrier LayerAUBEL OLIVER·Filed 2011·Application pending·0 cites
- 1631US2011156858A1SEMICONDUCTOR DEVICE COMPRISING METAL-BASED eFUSES OF ENHANCED PROGRAMMING EFFICIENCY BY ENHANCING METAL AGGLOMERATION AND/OR VOIDINGPOPPE JENS·Filed 2010·Application pending·0 cites
- 1729US2011049727A1Recessed interlayer dielectric in a metallization structure of a semiconductor deviceAUBEL OLIVER·Filed 2010·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →