Inventor · disambiguated record
Kai-Cheng Chou
Also filed as: CHOU KAI-CHENG
15 granted patents·3 pending applications·319 citations·filing 2001–2008
94Inventor score
Files withHYNIX SEMICONDUCTOR INC9HYNIX SEMICONDUCTOR AMERICA INC3RABKIN PETER2WINBOND ELECTRONICS CORP2
Top patents by PatentIndex Score
18 records- 0195US7408212B1Stackable resistive cross-point memory with schottky diode isolationWINBOND ELECTRONICS CORP·Filed 2004·Granted Aug 5, 2008·103 cites·14 claims
- 0291US6559008B2Non-volatile memory cells with selectively formed floating gateHYNIX SEMICONDUCTOR AMERICA INC·Filed 2001·Granted May 6, 2003·59 cites·24 claims
- 0387US6812515B2Polysilicon layers structure and method of forming sameHYNIX SEMICONDUCTOR INC·Filed 2001·Granted Nov 2, 2004·33 cites·9 claims
- 0485US6746906B2Transistor with ultra-short gate feature and method of fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2001·Granted Jun 8, 2004·23 cites·4 claims
- 0584US6818504B2Processes and structures for self-aligned contact non-volatile memory with peripheral transistors easily modifiable for various technologies and applicationsHYNIX SEMICONDUCTOR AMERICA INC·Filed 2001·Granted Nov 16, 2004·40 cites·30 claims
- 0679US6777741B2Non-volatile memory cells with selectively formed floating gateHYNIX SEMICONDUCTOR AMERICA INC·Filed 2003·Granted Aug 17, 2004·22 cites·19 claims
- 0772US8288219B2Method of forming a non-volatile memory cell using off-set spacersRABKIN PETER·Filed 2008·Granted Oct 16, 2012·2 cites·8 claims
- 0871US6849489B2Method for forming transistors with ultra-short gate featureHYNIX SEMICONDUCTOR INC·Filed 2004·Granted Feb 1, 2005·8 cites·2 claims
- 0968US7172939B1Method and structure for fabricating non volatile memory arraysWINBOND ELECTRONICS CORP·Filed 2005·Granted Feb 6, 2007·5 cites·17 claims
- 1064US7202134B2Method of forming transistors with ultra-short gate featureHYNIX SEMICONDUCTOR INC·Filed 2004·Granted Apr 10, 2007·5 cites·4 claims
- 1160US6876582B2Flash memory cell erase scheme using both source and channel regionsHYNIX SEMICONDUCTOR INC·Filed 2003·Granted Apr 5, 2005·10 cites·22 claims
- 1259US7160774B2Method of forming polysilicon layers in non-volatile memoryHYNIX SEMICONDUCTOR INC·Filed 2004·Granted Jan 9, 2007·6 cites·11 claims
- 1354US8946003B2Method of forming transistors with ultra-short gate featureRABKIN PETER·Filed 2007·Granted Feb 3, 2015·0 cites·9 claims
- 1450US6911370B2Flash memory device having poly spacersHYNIX SEMICONDUCTOR INC·Filed 2003·Granted Jun 28, 2005·3 cites·12 claims
- 1547US2006252193A1Method of forming polysilicon layers in a transistorHYNIX SEMICONDUCTOR INC·Filed 2006·Application pending·0 cites
- 1646US7250341B2Flash memory device having poly spacersHYNIX SEMICONDUCTOR INC·Filed 2005·Granted Jul 31, 2007·0 cites·12 claims
- 1741US2002123180A1Transistor and memory cell with ultra-short gate feature and method of fabricating the sameFiled 2001·Application pending·0 cites
- 1833US2004152260A1Non-volatile memory cell with non-uniform surface floating gate and control gateFiled 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →