Inventor · disambiguated record
Shulin Wang
Also filed as: WANG SHULIN
30 granted patents·11 pending applications·934 citations·filing 1996–2017
98Inventor score
Files withAPPLIED MATERIALS INC32ADVANCED MICRO FAB EQUIP INC2BRISTOL MYERS SQUIBB CO1OPTISOLAR INC1PANAYIL SHEEBA J1
Top patents by PatentIndex Score
41 records- 0196US7745329B2Tungsten nitride atomic layer deposition processesAPPLIED MATERIALS INC·Filed 2008·Granted Jun 29, 2010·36 cites·14 claims
- 0296US7172792B2Method for forming a high quality low temperature silicon nitride filmAPPLIED MATERIALS INC·Filed 2002·Granted Feb 6, 2007·135 cites·43 claims
- 0396US6833161B2Cyclical deposition of tungsten nitride for metal oxide gate electrodeAPPLIED MATERIALS INC·Filed 2002·Granted Dec 21, 2004·143 cites·53 claims
- 0496US6524952B1Method of forming a titanium silicide layer on a substrateAPPLIED MATERIALS INC·Filed 2000·Granted Feb 25, 2003·170 cites·15 claims
- 0594US7658800B2Gas distribution assembly for use in a semiconductor work piece processing reactorADVANCED MICRO FAB EQUIP INC·Filed 2006·Granted Feb 9, 2010·28 cites·21 claims
- 0690US7429516B2Tungsten nitride atomic layer deposition processesAPPLIED MATERIALS INC·Filed 2006·Granted Sep 30, 2008·12 cites·11 claims
- 0788US6582522B2Emissivity-change-free pumping plate kit in a single wafer chamberAPPLIED MATERIALS INC·Filed 2001·Granted Jun 24, 2003·37 cites·13 claims
- 0887US7115499B2Cyclical deposition of tungsten nitride for metal oxide gate electrodeAPPLIED MATERIALS INC·Filed 2004·Granted Oct 3, 2006·28 cites·23 claims
- 0986US6214714B1Method of titanium/titanium nitride integrationAPPLIED MATERIALS INC·Filed 1999·Granted Apr 10, 2001·58 cites·19 claims
- 1085US7078302B2Gate electrode dopant activation method for semiconductor manufacturing including a laser annealAPPLIED MATERIALS INC·Filed 2004·Granted Jul 18, 2006·28 cites·33 claims
- 1185US6555183B2Plasma treatment of a titanium nitride film formed by chemical vapor depositionAPPLIED MATERIALS INC·Filed 2000·Granted Apr 29, 2003·36 cites·18 claims
- 1281US7335266B2Method of forming a controlled and uniform lightly phosphorous doped silicon filmAPPLIED MATERIALS INC·Filed 2005·Granted Feb 26, 2008·7 cites·6 claims
- 1380US6559039B2Doped silicon deposition process in resistively heated single wafer chamberAPPLIED MATERIALS INC·Filed 2001·Granted May 6, 2003·23 cites·41 claims
- 1479US7365029B2Method for silicon nitride chemical vapor depositionAPPLIED MATERIALS INC·Filed 2005·Granted Apr 29, 2008·6 cites·11 claims
- 1576US6559074B1Method of forming a silicon nitride layer on a substrateAPPLIED MATERIALS INC·Filed 2001·Granted May 6, 2003·19 cites·14 claims
- 1674US6488776B2Method and apparatus for forming insitu boron doped polycrystalline and amorphous silicon filmsAPPLIED MATERIALS INC·Filed 2002·Granted Dec 3, 2002·14 cites·3 claims
- 1773US7611976B2Gate electrode dopant activation method for semiconductor manufacturingAPPLIED MATERIALS INC·Filed 2006·Granted Nov 3, 2009·3 cites·43 claims
- 1871US6726955B1Method of controlling the crystal structure of polycrystalline siliconAPPLIED MATERIALS INC·Filed 2000·Granted Apr 27, 2004·14 cites·28 claims
- 1968US6802906B2Emissivity-change-free pumping plate kit in a single wafer chamberAPPLIED MATERIALS INC·Filed 2002·Granted Oct 12, 2004·11 cites·24 claims
- 2068US5863598AMethod of forming doped silicon in high aspect ratio openingsAPPLIED MATERIALS INC·Filed 1996·Granted Jan 26, 1999·36 cites·20 claims
- 2167US6410090B1Method and apparatus for forming insitu boron doped polycrystalline and amorphous silicon filmsAPPLIED MATERIALS INC·Filed 1998·Granted Jun 25, 2002·27 cites·20 claims
- 2264US7972663B2Method and apparatus for forming a high quality low temperature silicon nitride layerAPPLIED MATERIALS INC·Filed 2003·Granted Jul 5, 2011·7 cites·29 claims
- 2363US6326690B2Method of titanium/titanium nitride integrationAPPLIED MATERIALS INC·Filed 2000·Granted Dec 4, 2001·9 cites·5 claims
- 2462US6982214B2Method of forming a controlled and uniform lightly phosphorous doped silicon filmAPPLIED MATERIALS INC·Filed 2002·Granted Jan 3, 2006·7 cites·15 claims
- 2561US6991999B2Bi-layer silicon film and method of fabricationAPPLIED MATERIALS INC·Filed 2001·Granted Jan 31, 2006·11 cites·20 claims
- 2656US2010029094A1Method and Apparatus for Forming a High Quality Low Temperature Silicon Nitride LayerAPPLIED MATERIALS INC·Filed 2009·Application pending·0 cites
- 2753US6365495B2Method for performing metallo-organic chemical vapor deposition of titanium nitride at reduced temperatureAPPLIED MATERIALS INC·Filed 1999·Granted Apr 2, 2002·13 cites·23 claims
- 2852US7250268B2Assay for measuring IκB kinase activity and identifying IκB kinase modulatorsBRISTOL MYERS SQUIBB CO·Filed 2004·Granted Jul 31, 2007·0 cites·6 claims
- 2950US6548402B2Method of depositing a thick titanium nitride filmAPPLIED MATERIALS INC·Filed 1999·Granted Apr 15, 2003·16 cites·26 claims
- 3049US2007166459A1Assembly and method for delivering a reactant material onto a substrateADVANCED MICRO FAB EQUIP INC·Filed 2006·Application pending·0 cites
- 3146US2007287271A1Deposition of nano-crystal silicon using a single wafer chamberPANAYIL SHEEBA J·Filed 2007·Application pending·0 cites
- 3244US2010151680A1Substrate carrier with enhanced temperature uniformityOPTISOLAR INC·Filed 2008·Application pending·0 cites
- 3342US10167812B2Radiation thermal absorber based on characteristic absorption spectrum, and stirling engine and operation method thereofUNIV ZHEJIANG·Filed 2017·Granted Jan 1, 2019·0 cites·8 claims
- 3441US7265036B2Deposition of nano-crystal silicon using a single wafer chamberAPPLIED MATERIALS INC·Filed 2004·Granted Sep 4, 2007·0 cites·17 claims
- 3541US2006024959A1Thin tungsten silicide layer deposition and gate metal integrationAPPLIED MATERIALS INC·Filed 2005·Application pending·0 cites
- 3639US2004266123A1Electron beam treatment of SixNy filmsAPPLIED MATERIALS INC·Filed 2004·Application pending·0 cites
- 3739US2003124818A1Method and apparatus for forming silicon containing filmsAPPLIED MATERIALS INC·Filed 2001·Application pending·0 cites
- 3838US2003207547A1Silicon deposition process in resistively heated single wafer chamberFiled 2003·Application pending·0 cites
- 3936US2003059535A1Cycling deposition of low temperature films in a cold wall single wafer process chamberFiled 2001·Application pending·0 cites
- 4033US2002192396A1Method of titanium/titanium nitride integrationFiled 2000·Application pending·0 cites
- 4133US2004009680A1Seedless method of forming a silicon germanium layer on a gate dielectric layerAPPLIED MATERIALS INC·Filed 2002·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →