Inventor · disambiguated record
Se-Ho Lee
Also filed as: LEE SE-HO
95 granted patents·25 pending applications·849 citations·filing 2003–2025
99Inventor score
Files withSK HYNIX INC49SAMSUNG ELECTRONICS CO LTD23SAMSUNG DISPLAY CO LTD11SK CHEMICALS CO LTD10AMOSENSE CO LTD4
Top patents by PatentIndex Score
120 records- 0197US11362143B2Nonvolatile memory device having three-dimensional structureSK HYNIX INC·Filed 2020·Granted Jun 14, 2022·5 cites·20 claims
- 0297US10147769B2Organic light emitting diode display having an auxiliary member in contact with an upper surface of an auxiliary electrodeSAMSUNG DISPLAY CO LTD·Filed 2017·Granted Dec 4, 2018·35 cites·12 claims
- 0397US7323708B2Phase change memory devices having phase change area in porous dielectric layerSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jan 29, 2008·152 cites·13 claims
- 0496US7442602B2Methods of fabricating phase change memory cells having a cell diode and a bottom electrode self-aligned with each otherSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Oct 28, 2008·39 cites·14 claims
- 0595US10854707B2Semiconductor device including dielectric structure having ferroelectric layer and non-ferroelectric layerSK HYNIX INC·Filed 2019·Granted Dec 1, 2020·10 cites·20 claims
- 0695US7482616B2Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jan 27, 2009·39 cites·67 claims
- 0795US7130214B2Low-current and high-speed phase-change memory devices and methods of driving the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Oct 31, 2006·35 cites·18 claims
- 0895US6967865B2Low-current and high-speed phase-change memory devices and methods of driving the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Nov 22, 2005·76 cites·23 claims
- 0994US8351240B2Phase change memory device having multi-level and method of driving the sameSK HYNIX INC·Filed 2009·Granted Jan 8, 2013·22 cites·10 claims
- 1094US7214957B2PRAMS having phase-change layer pattern with electrode contact area and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted May 8, 2007·28 cites·13 claims
- 1194US6806528B2Phase-changeable memory devices having phase-changeable material regions with lateral contacts and methods of fabrication thereforSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Oct 19, 2004·53 cites·28 claims
- 1293US9074048B2Polyarylene sulfide and preparation method thereofKIM SUNG-GI·Filed 2011·Granted Jul 7, 2015·9 cites·8 claims
- 1393US7598112B2Phase change memory devices and their methods of fabricationSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Oct 6, 2009·24 cites·12 claims
- 1492US9076983B2Organic light-emitting display device and method of manufacturing the sameSAMSUNG DISPLAY CO LTD·Filed 2013·Granted Jul 7, 2015·8 cites·27 claims
- 1592US8159869B2Circuit and method for generating reference voltage, phase change random access memory apparatus and read method using the samePARK HAE CHAN·Filed 2009·Granted Apr 17, 2012·29 cites·17 claims
- 1691US10875966B2Polyarylene sulfide and a preparation method thereofSK CHEMICALS CO LTD·Filed 2018·Granted Dec 29, 2020·1 cites·14 claims
- 1790US10822457B2Polyarylene sulfide resin and preparation method thereofSK CHEMICALS CO LTD·Filed 2016·Granted Nov 3, 2020·2 cites·9 claims
- 1890US9362345B2Organic light emitting display apparatus and method of manufacturing the sameSAMSUNG DISPLAY CO LTD·Filed 2013·Granted Jun 7, 2016·8 cites·13 claims
- 1990US8842461B2Phase change memory device having multi-level and method of driving the sameSK HYNIX INC·Filed 2012·Granted Sep 23, 2014·8 cites·18 claims
- 2089US11430812B2Nonvolatile memory device including ferroelectric layer having negative capacitanceSK HYNIX INC·Filed 2020·Granted Aug 30, 2022·2 cites·9 claims
- 2189US7018911B2Methods for fabrication for phase-changeable memory devices having phase-changeable material regions with lateral contactsSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Mar 28, 2006·31 cites·17 claims
- 2288US11923609B2Radar antennaAMOTECH CO LTD·Filed 2020·Granted Mar 5, 2024·4 cites·19 claims
- 2388US7671395B2Phase change memory cells having a cell diode and a bottom electrode self-aligned with each otherSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Mar 2, 2010·14 cites·35 claims
- 2487US8026543B2Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Sep 27, 2011·12 cites·20 claims
- 2587US7534723B2Methods of forming fine patterns, and methods of forming trench isolation layers using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted May 19, 2009·12 cites·11 claims
- 2686US10930197B2Display apparatus and tiled display apparatusSAMSUNG DISPLAY CO LTD·Filed 2016·Granted Feb 23, 2021·3 cites·19 claims
- 2785US9650515B2Polyarylene sulfide resin composition and a preparation method thereofSK CHEMICALS CO LTD·Filed 2013·Granted May 16, 2017·4 cites·21 claims
- 2884US11309354B2Three-dimensional nonvolatile memory device having resistance change structure and method of operating the sameSK HYNIX INC·Filed 2020·Granted Apr 19, 2022·1 cites·17 claims
- 2983US11922062B2Controller and operating method thereofSK HYNIX INC·Filed 2021·Granted Mar 5, 2024·1 cites·16 claims
- 3082US11792995B2Semiconductor device including ferroelectric layer and method of manufacturing the sameSK HYNIX INC·Filed 2021·Granted Oct 17, 2023·1 cites·14 claims
- 3182US11424269B2Method of fabricating vertical memory deviceSK HYNIX INC·Filed 2021·Granted Aug 23, 2022·1 cites·16 claims
- 3282US11362107B2Nonvolatile memory device having a ferroelectric layerSK HYNIX INC·Filed 2020·Granted Jun 14, 2022·1 cites·5 claims
- 3382US9401393B2Organic light-emitting display device and method of manufacturing the sameSAMSUNG DISPLAY CO LTD·Filed 2015·Granted Jul 26, 2016·2 cites·8 claims
- 3481US11244959B2Semiconductor device having ferroelectric material and method of fabricating the sameSK HYNIX INC·Filed 2019·Granted Feb 8, 2022·2 cites·7 claims
- 3581US7105396B2Phase changeable memory cells and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Sep 12, 2006·22 cites·24 claims
- 3680US9818481B2Resistive memory device and operation method thereofSK HYNIX INC·Filed 2017·Granted Nov 14, 2017·4 cites·4 claims
- 3779US9613690B2Resistive memory device and operation method thereofSK HYNIX INC·Filed 2013·Granted Apr 4, 2017·5 cites·13 claims
- 3878US11251538B2Antenna moduleAMOTECH CO LTD·Filed 2018·Granted Feb 15, 2022·3 cites·13 claims
- 3978US10446613B2Method of manufacturing an organic light emitting diode display having an auxiliary member in contact with an upper surface of an auxiliary electrodeSAMSUNG DISPLAY CO LTD·Filed 2018·Granted Oct 15, 2019·2 cites·8 claims
- 4078US6995388B2Phase changeable memory devices and methods of forming the same in which an upper electrode includes a tip that extends toward a lower electrodeSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Feb 7, 2006·24 cites·34 claims
- 4178US2025298543A1Memory system and operating method of the memory systemSK HYNIX INC·Filed 2025·Application pending·0 cites
- 4277US11370915B2Polyarylene sulfide resin composition and formed articleSK CHEMICALS CO LTD·Filed 2019·Granted Jun 28, 2022·0 cites·19 claims
- 4377US8440991B2Phase change memory device having a heater with a temperature dependent resistivity, method of manufacturing the same, and circuit of the samePARK HAE CHAN·Filed 2009·Granted May 14, 2013·7 cites·15 claims
- 4477US7339185B2Phase change memory device and method for forming the sameSAMSUNG ELECTRONICS COL LTD·Filed 2005·Granted Mar 4, 2008·14 cites·21 claims
- 4577US2021079166A1Polyarylene sulfide and a preparation method thereofSK CHEMICALS CO LTD·Filed 2020·Application pending·0 cites
- 4676US7625777B2Memory device having highly integrated cell structure and method of its fabricationSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Dec 1, 2009·4 cites·12 claims
- 4776US7411208B2Phase-change memory device having a barrier layer and manufacturing methodSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Aug 12, 2008·20 cites·44 claims
- 4876US2024357836A1Nonvolatile memory device having resistance change layerSK HYNIX INC·Filed 2024·Application pending·0 cites
- 4975US11390714B2Polyarylene sulfide resin and preparation method thereofSK CHEMICALS CO LTD·Filed 2020·Granted Jul 19, 2022·0 cites·11 claims
- 5075US9450039B2Organic light emitting display apparatus and method of manufacturing the sameSAMSUNG DISPLAY CO LTD·Filed 2014·Granted Sep 20, 2016·2 cites·32 claims
Showing the top 50 of 120 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →