US10446613B2ActiveUtilityA1

Method of manufacturing an organic light emitting diode display having an auxiliary member in contact with an upper surface of an auxiliary electrode

Assignee: SAMSUNG DISPLAY CO LTDPriority: Dec 7, 2016Filed: Nov 12, 2018Granted: Oct 15, 2019
Est. expiryDec 7, 2036(~10.4 yrs left)· nominal 20-yr term from priority
H01L 51/5228H01L 27/3279H01L 51/0023H01L 27/3276H01L 2227/32H01L 27/127H01L 51/0002H01L 27/3206H10K 59/1315H10K 59/80522H10K 59/30H10D 86/0221H10K 71/211H10K 59/124H10K 59/1213H10K 2102/103H10K 59/35H10K 59/122H10K 59/1201H10K 50/11H10K 59/10H10K 50/824H10K 71/621H10K 59/131H10K 71/10
78
PatentIndex Score
2
Cited by
14
References
8
Claims

Abstract

An organic light emitting diode display according to an exemplary embodiment includes: a substrate; a pixel formed on the substrate and including a pixel area displaying an image and a peripheral area adjacent to the pixel area; an insulating layer at the pixel area and the peripheral area on the substrate; a first electrode at the pixel area on the insulating layer; an organic emission layer on the first electrode and extending to the peripheral area; a second electrode on the organic emission layer and disposed in the pixel area and the peripheral area; an auxiliary electrode in the peripheral area on the substrate and partially exposed by a first opening formed in the insulating layer; and an auxiliary member disposed on the auxiliary electrode and in contact with an upper surface of the auxiliary electrode exposed by the first opening.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
       1. A method for manufacturing an organic light emitting diode display, comprising:
 preparing a substrate; 
 forming a thin film transistor including a semiconductor layer, a gate electrode on the semiconductor layer, and a source electrode and a drain electrode connected to the semiconductor layer on the substrate; 
 forming an auxiliary electrode supplying a common voltage on the substrate; 
 forming an insulating layer on the thin film transistor and the auxiliary electrode and exposing parts of the drain electrode and the auxiliary electrode; 
 forming a first electrode on the insulating layer and in contact with the drain electrode; 
 forming an auxiliary member in contact with the auxiliary electrode through a first opening formed in the insulating layer; 
 forming an organic emission layer on the first electrode and the auxiliary member; 
 removing a part of the organic emission layer to expose a part of the auxiliary member; and 
 forming a second electrode on the organic emission layer. 
 
     
     
       2. The method of  claim 1 , wherein
 the removing of the part of the organic emission layer is performed by using a laser. 
 
     
     
       3. The method of  claim 1 , wherein
 the removing of the part of the organic emission layer includes forming a second opening by removing the part of the organic emission layer. 
 
     
     
       4. The method of  claim 3 , wherein
 the second opening has a circular shape. 
 
     
     
       5. The method of  claim 1 , further comprising
 forming a pixel definition layer having a third opening exposing the part of the auxiliary member and a fourth opening exposing the part of the first electrode. 
 
     
     
       6. The method of  claim 1 , wherein:
 the source electrode, the drain electrode, and the auxiliary electrode are formed with the same layer. 
 
     
     
       7. The method of  claim 1 , wherein
 the first electrode and the auxiliary member are formed with the same layer. 
 
     
     
       8. The method of  claim 1 , wherein
 the auxiliary member is in contact with an entire upper surface of the auxiliary electrode exposed by the first opening.

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