Inventor · disambiguated record
Hyangkeun Yoo
Also filed as: YOO HYANGKEUN
51 granted patents·4 pending applications·104 citations·filing 2017–2024
97Inventor score
Files withSK HYNIX INC55
Top patents by PatentIndex Score
55 records- 0197US11362143B2Nonvolatile memory device having three-dimensional structureSK HYNIX INC·Filed 2020·Granted Jun 14, 2022·5 cites·20 claims
- 0297US10720437B2Ferroelectric memory device having vertical channel between source line and bit lineSK HYNIX INC·Filed 2018·Granted Jul 21, 2020·17 cites·14 claims
- 0396US10490571B2Semiconductor device having ferroelectric layer and method of manufacturing the sameSK HYNIX INC·Filed 2018·Granted Nov 26, 2019·17 cites·10 claims
- 0495US10854707B2Semiconductor device including dielectric structure having ferroelectric layer and non-ferroelectric layerSK HYNIX INC·Filed 2019·Granted Dec 1, 2020·10 cites·20 claims
- 0593US10734409B2Semiconductor devices including ferroelectric layer and methods of fabricating the sameSK HYNIX INC·Filed 2018·Granted Aug 4, 2020·7 cites·12 claims
- 0692US10475813B2Ferroelectric memory device and method of manufacturing the sameSK HYNIX INC·Filed 2017·Granted Nov 12, 2019·7 cites·17 claims
- 0789US11430812B2Nonvolatile memory device including ferroelectric layer having negative capacitanceSK HYNIX INC·Filed 2020·Granted Aug 30, 2022·2 cites·9 claims
- 0889US10804294B2Ferroelectric device and method of manufacturing the sameSK HYNIX INC·Filed 2018·Granted Oct 13, 2020·5 cites·10 claims
- 0987US10522564B2Ferroelectric memory device and method of manufacturing the sameSK HYNIX INC·Filed 2017·Granted Dec 31, 2019·4 cites·11 claims
- 1087US10374054B2Ferroelectric memory devicesSK HYNIX INC·Filed 2018·Granted Aug 6, 2019·7 cites·19 claims
- 1185US11488979B2Semiconductor device of three-dimensional structure including ferroelectric layerSK HYNIX INC·Filed 2020·Granted Nov 1, 2022·2 cites·20 claims
- 1284US11309354B2Three-dimensional nonvolatile memory device having resistance change structure and method of operating the sameSK HYNIX INC·Filed 2020·Granted Apr 19, 2022·1 cites·17 claims
- 1382US11424269B2Method of fabricating vertical memory deviceSK HYNIX INC·Filed 2021·Granted Aug 23, 2022·1 cites·16 claims
- 1482US11362107B2Nonvolatile memory device having a ferroelectric layerSK HYNIX INC·Filed 2020·Granted Jun 14, 2022·1 cites·5 claims
- 1582US10453514B2Ferroelectric memory device and method of manufacturing the sameSK HYNIX INC·Filed 2017·Granted Oct 22, 2019·3 cites·10 claims
- 1681US11393846B2Ferroelectric memory device having ferroelectric induction layer and method of manufacturing the sameSK HYNIX INC·Filed 2020·Granted Jul 19, 2022·1 cites·14 claims
- 1781US11244959B2Semiconductor device having ferroelectric material and method of fabricating the sameSK HYNIX INC·Filed 2019·Granted Feb 8, 2022·2 cites·7 claims
- 1878US10804295B2Ferroelectric memory deviceSK HYNIX INC·Filed 2018·Granted Oct 13, 2020·2 cites·18 claims
- 1978US10529852B2Ferroelectric memory device and method of manufacturing the sameSK HYNIX INC·Filed 2018·Granted Jan 7, 2020·2 cites·14 claims
- 2077US12382846B2Ferroelectric components and cross point array devices including the ferroelectric componentsSK HYNIX INC·Filed 2022·Granted Aug 5, 2025·0 cites·18 claims
- 2177US10847721B2Nonvolatile memory deviceSK HYNIX INC·Filed 2018·Granted Nov 24, 2020·1 cites·20 claims
- 2276US2024357836A1Nonvolatile memory device having resistance change layerSK HYNIX INC·Filed 2024·Application pending·0 cites
- 2375US12051751B2Ferroelectric memory deviceSK HYNIX INC·Filed 2022·Granted Jul 30, 2024·0 cites·10 claims
- 2473US11515419B2Ferroelectric semiconductor device and method of manufacturing the sameSK HYNIX INC·Filed 2018·Granted Nov 29, 2022·1 cites·10 claims
- 2573US10937808B2Vertical memory device and method of fabricating the sameSK HYNIX INC·Filed 2019·Granted Mar 2, 2021·1 cites·12 claims
- 2673US10903363B2Ferroelectric semiconductor deviceSK HYNIX INC·Filed 2018·Granted Jan 26, 2021·1 cites·20 claims
- 2772US10475653B2Methods of fabricating ferroelectric memory devicesSK HYNIX INC·Filed 2018·Granted Nov 12, 2019·1 cites·20 claims
- 2871US10847541B2Ferroelectric memory device and a method of manufacturing the sameSK HYNIX INC·Filed 2018·Granted Nov 24, 2020·1 cites·13 claims
- 2970US11508846B2Ferroelectric memory deviceSK HYNIX INC·Filed 2020·Granted Nov 22, 2022·0 cites·18 claims
- 3069US11848193B2Ferroelectric semiconductor device and method of manufacturing the sameSK HYNIX INC·Filed 2022·Granted Dec 19, 2023·0 cites·11 claims
- 3168US12108606B2Nonvolatile memory device having a ferroelectric layerSK HYNIX INC·Filed 2022·Granted Oct 1, 2024·0 cites·5 claims
- 3268US11825660B2Semiconductor device having ferroelectric material and method of fabricating the sameSK HYNIX INC·Filed 2021·Granted Nov 21, 2023·0 cites·8 claims
- 3367US11812618B2Nonvolatile memory device including ferroelectric layer having negative capacitanceSK HYNIX INC·Filed 2022·Granted Nov 7, 2023·0 cites·9 claims
- 3466US11871569B2Nonvolatile memory device having multiple numbers of channel layersSK HYNIX INC·Filed 2021·Granted Jan 9, 2024·0 cites·19 claims
- 3566US11800719B2Nonvolatile memory device having a ferroelectric layerSK HYNIX INC·Filed 2022·Granted Oct 24, 2023·0 cites·10 claims
- 3665US10964721B2Semiconductor devices including ferroelectric layer and methods of fabricating the sameSK HYNIX INC·Filed 2020·Granted Mar 30, 2021·0 cites·8 claims
- 3762US12108611B2Nonvolatile memory device having resistance change layerSK HYNIX INC·Filed 2020·Granted Oct 1, 2024·0 cites·7 claims
- 3862US11456318B2Nonvolatile memory device having a ferroelectric layerSK HYNIX INC·Filed 2020·Granted Sep 27, 2022·0 cites·12 claims
- 3962US10861878B2Semiconductor device having ferroelectric layer and method of manufacturing the sameSK HYNIX INC·Filed 2019·Granted Dec 8, 2020·0 cites·10 claims
- 4062US10593699B2Ferroelectric memory deviceSK HYNIX INC·Filed 2017·Granted Mar 17, 2020·1 cites·7 claims
- 4160US11164885B2Nonvolatile memory device having multiple numbers of channel layersSK HYNIX INC·Filed 2019·Granted Nov 2, 2021·0 cites·13 claims
- 4259US11502248B2Ferroelectric components and cross point array devices including the ferroelectric componentsSK HYNIX INC·Filed 2020·Granted Nov 15, 2022·0 cites·18 claims
- 4359US10978483B2Ferroelectric memory deviceSK HYNIX INC·Filed 2020·Granted Apr 13, 2021·0 cites·4 claims
- 4459US10475924B2Ferroelectric memory devicesSK HYNIX INC·Filed 2018·Granted Nov 12, 2019·1 cites·8 claims
- 4558US2019288116A1Ferroelectric memory deviceSK HYNIX INC·Filed 2018·Application pending·0 cites
- 4656US11482667B2Nonvolatile memory device having a resistance change layer and a plurality of electrode pattern layersSK HYNIX INC·Filed 2020·Granted Oct 25, 2022·0 cites·8 claims
- 4754US10923501B2Ferroelectric memory device and method of manufacturing the sameSK HYNIX INC·Filed 2019·Granted Feb 16, 2021·0 cites·12 claims
- 4849US10763360B2Ferroelectric memory device and method of manufacturing the sameSK HYNIX INC·Filed 2018·Granted Sep 1, 2020·0 cites·9 claims
- 4949US10475814B2Ferroelectric memory devicesSK HYNIX INC·Filed 2018·Granted Nov 12, 2019·0 cites·20 claims
- 5048US11469272B2Nonvolatile memory device having resistance change memory layerSK HYNIX INC·Filed 2020·Granted Oct 11, 2022·0 cites·20 claims
Showing the top 50 of 55 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →