Inventor · disambiguated record
Randy W. Mann
Also filed as: MANN RANDY · MANN RANDY W · MANN RANDY WILLIAM
110 granted patents·7 pending applications·1,996 citations·filing 1993–2023
99Inventor score
Top patents by PatentIndex Score
117 records- 0198US7679083B2Semiconductor integrated test structures for electron beam inspection of semiconductor wafersSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Mar 16, 2010·105 cites·19 claims
- 0297US10109637B1Cross couple structure for vertical transistorsGLOBALFOUNDRIES INC·Filed 2017·Granted Oct 23, 2018·20 cites·20 claims
- 0396US10818674B2Structures and SRAM bit cells integrating complementary field-effect transistorsGLOBALFOUNDRIES INC·Filed 2019·Granted Oct 27, 2020·12 cites·15 claims
- 0496US7087477B2FinFET SRAM cell using low mobility plane for cell stability and method for formingIBM·Filed 2004·Granted Aug 8, 2006·120 cites·18 claims
- 0596US6967351B2Finfet SRAM cell using low mobility plane for cell stability and method for formingIBM·Filed 2001·Granted Nov 22, 2005·104 cites·13 claims
- 0695US11309319B2Structures and SRAM bit cells integrating complementary field-effect transistorsGLOBALFOUNDRIES US INC·Filed 2020·Granted Apr 19, 2022·3 cites·20 claims
- 0795US8947912B2Memory cell including unidirectional gate conductors and contactsCALHOUN BENTON H·Filed 2011·Granted Feb 3, 2015·25 cites·32 claims
- 0895US5675185ASemiconductor structure incorporating thin film transistors with undoped cap oxide layersIBM·Filed 1995·Granted Oct 7, 1997·123 cites·24 claims
- 0994US6646305B2Grounded body SOI SRAM cellIBM·Filed 2001·Granted Nov 11, 2003·72 cites·11 claims
- 1092US6294419B1Structure and method for improved latch-up using dual depth STI with impurity implantIBM·Filed 2000·Granted Sep 25, 2001·61 cites·17 claims
- 1190US9337204B2Memory cellUniv Virginia Patent Found·Filed 2015·Granted May 10, 2016·6 cites·15 claims
- 1290US6498096B2Borderless contact to diffusion with respect to gate conductor and methods for fabricatingIBM·Filed 2001·Granted Dec 24, 2002·62 cites·11 claims
- 1389US7313032B2SRAM voltage control for improved operational marginsIBM·Filed 2005·Granted Dec 25, 2007·21 cites·15 claims
- 1489US6144086AStructure for improved latch-up using dual depth STI with impurity implantIBM·Filed 1999·Granted Nov 7, 2000·84 cites·26 claims
- 1589US6022766ASemiconductor structure incorporating thin film transistors, and methods for its manufactureIBM·Filed 1997·Granted Feb 8, 2000·76 cites·2 claims
- 1688US6489223B1Angled implant processIBM·Filed 2001·Granted Dec 3, 2002·39 cites·18 claims
- 1787US6476445B1Method and structures for dual depth oxygen layers in silicon-on-insulator processesIBM·Filed 1999·Granted Nov 5, 2002·75 cites·25 claims
- 1887US5828131ALow temperature formation of low resistivity titanium silicideIBM·Filed 1996·Granted Oct 27, 1998·60 cites·6 claims
- 1986US6624478B2High mobility transistors in SOI and method for formingIBM·Filed 2002·Granted Sep 23, 2003·34 cites·15 claims
- 2083US10068902B1Integrated circuit structure incorporating non-planar field effect transistors with different channel region heights and methodGLOBALFOUNDRIES INC·Filed 2017·Granted Sep 4, 2018·4 cites·4 claims
- 2183US9219040B2Integrated circuit with semiconductor fin fuseGLOBALFOUNDRIES INC·Filed 2013·Granted Dec 22, 2015·5 cites·13 claims
- 2282US5485095AFabrication test circuit and method for signalling out-of-spec resistance in integrated circuit structureIBM·Filed 1994·Granted Jan 16, 1996·51 cites·33 claims
- 2381US10403629B2Six-transistor (6T) SRAM cell structureGLOBALFOUNDRIES INC·Filed 2017·Granted Sep 3, 2019·5 cites·20 claims
- 2481US9372226B2Wafer test structures and methods of providing wafer test structuresGLOBALFOUNDRIES INC·Filed 2014·Granted Jun 21, 2016·5 cites·18 claims
- 2581US7745863B2Flip FERAM cell and method to form sameIBM·Filed 2008·Granted Jun 29, 2010·5 cites·15 claims
- 2681US5510295AMethod for lowering the phase transformation temperature of a metal silicideIBM·Filed 1993·Granted Apr 23, 1996·47 cites·31 claims
- 2780US8569116B2Integrated circuit with a fin-based fuse, and related fabrication methodMANN RANDY W·Filed 2011·Granted Oct 29, 2013·5 cites·19 claims
- 2880US7696034B2Methods of base formation in a BiCOMS processIBM·Filed 2008·Granted Apr 13, 2010·6 cites·9 claims
- 2980US7193262B2Low-cost deep trench decoupling capacitor device and process of manufactureIBM·Filed 2004·Granted Mar 20, 2007·26 cites·16 claims
- 3079US7390721B2Methods of base formation in a BiCMOS processIBM·Filed 2005·Granted Jun 24, 2008·6 cites·12 claims
- 3179US6333202B1Flip FERAM cell and method to form sameIBM·Filed 1999·Granted Dec 25, 2001·27 cites·27 claims
- 3279US6187617B1Semiconductor structure having heterogeneous silicide regions and method for forming sameIBM·Filed 1999·Granted Feb 13, 2001·46 cites·13 claims
- 3378US9530488B1Methods, apparatus and system determining dual port DC contention marginGLOBALFOUNDRIES INC·Filed 2016·Granted Dec 27, 2016·5 cites·20 claims
- 3478US8907687B2Integrated circuit with stress generator for stressing test devicesMCMAHON WILLIAM·Filed 2012·Granted Dec 9, 2014·7 cites·23 claims
- 3578US6445050B1Symmetric device with contacts self aligned to gateIBM·Filed 2000·Granted Sep 3, 2002·24 cites·13 claims
- 3678US6268286B1Method of fabricating MOSFET with lateral resistor with ballastingIBM·Filed 2000·Granted Jul 31, 2001·20 cites·10 claims
- 3777US11037937B2SRAM bit cells formed with dummy structuresGLOBALFOUNDRIES US INC·Filed 2019·Granted Jun 15, 2021·2 cites·17 claims
- 3877US10163914B2Method of reducing fin width in FinFET SRAM array to mitigate low voltage strap bit failsGLOBALFOUNDRIES INC·Filed 2017·Granted Dec 25, 2018·2 cites·14 claims
- 3977US6774017B2Method and structures for dual depth oxygen layers in silicon-on-insulator processesIBM·Filed 2002·Granted Aug 10, 2004·17 cites·14 claims
- 4077US6512296B1Semiconductor structure having heterogenous silicide regions having titanium and molybdenumIBM·Filed 2000·Granted Jan 28, 2003·16 cites·6 claims
- 4177US5670812AField effect transistor having contact layer of transistor gate electrode materialIBM·Filed 1995·Granted Sep 23, 1997·42 cites·21 claims
- 4277US5496771AMethod of making overpass mask/insulator for local interconnectsIBM·Filed 1994·Granted Mar 5, 1996·53 cites·36 claims
- 4376US6965133B2Method of base formation in a BiCMOS processIBM·Filed 2004·Granted Nov 15, 2005·16 cites·9 claims
- 4473US6368903B1SOI low capacitance body contactIBM·Filed 2000·Granted Apr 9, 2002·16 cites·11 claims
- 4572US7190007B2Isolated fully depleted silicon-on-insulator regions by selective etchIBM·Filed 2004·Granted Mar 13, 2007·15 cites·17 claims
- 4672US6825530B1Zero Threshold Voltage pFET and method of making sameIBM·Filed 2003·Granted Nov 30, 2004·14 cites·16 claims
- 4772US6815751B2Structure for scalable, low-cost polysilicon DRAM in a planar capacitorIBM·Filed 2002·Granted Nov 9, 2004·14 cites·10 claims
- 4871US9029956B2SRAM cell with individual electrical device threshold controlMANN RANDY W·Filed 2011·Granted May 12, 2015·3 cites·19 claims
- 4971US6700163B2Selective silicide blockingIBM·Filed 2001·Granted Mar 2, 2004·15 cites·16 claims
- 5070US9202552B2Dual port SRAM bitcell structures with improved transistor arrangementGLOBALFOUNDRIES INC·Filed 2013·Granted Dec 1, 2015·4 cites·19 claims
Showing the top 50 of 117 patent records by PatentIndex Score.
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