Inventor · disambiguated record
Masaru Kadoshima
Also filed as: KADOSHIMA MASARU
16 granted patents·22 pending applications·66 citations·filing 1998–2024
91Inventor score
Files withRENESAS TECH CORP10RENESAS ELECTRONICS CORP8KOKUSAI ELECTRIC CORP6KADOSHIMA MASARU4NABATAME TOSHIHIDE3
Top patents by PatentIndex Score
38 records- 0182US9685565B2Semiconductor device and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2014·Granted Jun 20, 2017·5 cites·8 claims
- 0278US7323381B2Semiconductor device and manufacturing method thereofRENESAS TECH CORP·Filed 2005·Granted Jan 29, 2008·8 cites·12 claims
- 0374US8293632B2Manufacturing method of semiconductor deviceKADOSHIMA MASARU·Filed 2010·Granted Oct 23, 2012·5 cites·19 claims
- 0472US8536017B2Method of manufacturing semiconductor deviceKADOSHIMA MASARU·Filed 2012·Granted Sep 17, 2013·4 cites·5 claims
- 0571US7618855B2Manufacturing method of semiconductor deviceRENESAS TECH CORP·Filed 2006·Granted Nov 17, 2009·5 cites·10 claims
- 0666US7429770B2Semiconductor device and manufacturing method thereofRENESAS TECH CORP·Filed 2005·Granted Sep 30, 2008·4 cites·14 claims
- 0765US12431336B2Method of processing substrate, method of manufacturing semiconductor device, recording medium, and substrate processing apparatusKOKUSAI ELECTRIC CORP·Filed 2022·Granted Sep 30, 2025·0 cites·18 claims
- 0862US7202539B2Semiconductor device having misfet gate electrodes with and without GE or impurity and manufacturing method thereofRENESAS TECH CORP·Filed 2005·Granted Apr 10, 2007·2 cites·2 claims
- 0961US2024387209A1Substrate processing method, method of manufacturing semiconductor device, substrate processing apparatus and non-transitory computer- readable recording mediumKOKUSAI ELECTRIC COPRORATION·Filed 2024·Application pending·0 cites
- 1061US2024271278A1Method of processing substrate, method of manufacturing semiconductor device, substrate processing apparatus, and recording mediumKOKUSAI ELECTRIC CORP·Filed 2024·Application pending·0 cites
- 1158US6483167B1Semiconductor device and production method thereofHITACHI LTD·Filed 2000·Granted Nov 19, 2002·9 cites·3 claims
- 1257US7820503B2Semiconductor device and manufacturing method of the sameRENESAS ELECTRONICS CORP·Filed 2008·Granted Oct 26, 2010·1 cites·6 claims
- 1357US7511338B2Semiconductor device and manufacturing method of the sameRENESAS TECH CORP·Filed 2006·Granted Mar 31, 2009·1 cites·6 claims
- 1457US2023411148A1Processing method, method of manufacturing semiconductor device, processing apparatus, and recording mediumKOKUSAI ELECTRIC CORP·Filed 2023·Application pending·0 cites
- 1557US2024412969A1Method of forming film, method of manufacturing semiconductor device, film forming apparatus, and recording mediumKOKUSAI ELECTRIC CORP·Filed 2024·Application pending·0 cites
- 1655US2024145233A1Processing method, method of manufacturing semiconductor device, processing apparatus and non-transitory computer-readable recording mediumKOKUSAI ELECTRIC CORP·Filed 2024·Application pending·0 cites
- 1754US2023335398A1Substrate processing method, method of manufacturing semiconductor device, substrate processing apparatus and non-transitory computer-readable recording mediumKOKUSAI ELECTRIC CORP·Filed 2023·Application pending·0 cites
- 1853US2018308964A1Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2018·Application pending·0 cites
- 1952US6245455B1Sodium-sulfur secondary batteryHITACHI LTD·Filed 1998·Granted Jun 12, 2001·22 cites·21 claims
- 2050US11094833B2Semiconductor device including memory using hafnium and a method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2019·Granted Aug 17, 2021·0 cites·13 claims
- 2147US10062773B2Semiconductor device having a transistor and first and second embedded layersRENESAS ELECTRONICS CORP·Filed 2015·Granted Aug 28, 2018·0 cites·18 claims
- 2245US2007257320A1Semiconductor device and manufacturing method thereofNABATAME TOSHIHIDE·Filed 2007·Application pending·0 cites
- 2344US11081596B2Semiconductor device and manufacturing device of the sameRENESAS ELECTRONICS CORP·Filed 2018·Granted Aug 3, 2021·0 cites·13 claims
- 2443US2006214207A1Semiconductor device and manufacturing method thereofNABATAME TOSHIHIDE·Filed 2006·Application pending·0 cites
- 2542US2007054503A1Film forming method and fabrication process of semiconductor deviceRENESAS TECH CORP·Filed 2006·Application pending·0 cites
- 2642US2009020824A1Semiconductor device and method for producing the sameRENESAS TECH CORP·Filed 2008·Application pending·0 cites
- 2741US10475883B2Semiconductor device and method of manufacturing thereofRENESAS ELECTRONICS CORP·Filed 2017·Granted Nov 12, 2019·0 cites·15 claims
- 2841US2007221970A1Manufacturing method of semiconductor device and semiconductor deviceRENESAS TECH CORP·Filed 2007·Application pending·0 cites
- 2941US2007210354A1Semiconductor device and semiconductor device manufacturing methodRENESAS TECH CORP·Filed 2007·Application pending·0 cites
- 3040US2012252180A1Manufacturing method of semiconductor integrated circuit deviceTOMIMATSU TAKAHIRO·Filed 2012·Application pending·0 cites
- 3140US2005285206A1Semiconductor device and manufacturing method thereofRENESAS TECH CORP·Filed 2005·Application pending·0 cites
- 3239US2006278937A1Semiconductor device and manufacturing method of the sameKADOSHIMA MASARU·Filed 2006·Application pending·0 cites
- 3337US2012056268A1Semiconductor device and manufacturing method thereofMIZUTANI MASAHARU·Filed 2011·Application pending·0 cites
- 3436US2006071282A1Semiconductor device and manufacturing method thereofKADOSHIMA MASARU·Filed 2005·Application pending·0 cites
- 3536US2012045876A1Method for manufacturing a semiconductor deviceKAWAHARA TAKAAKI·Filed 2011·Application pending·0 cites
- 3636US2006091474A1Semiconductor device and manufacturing method thereofNABATAME TOSHIHIDE·Filed 2005·Application pending·0 cites
- 3734US2010320542A1Semiconductor device and manufacturing method thereofRENESAS ELECTRONICS CORP·Filed 2010·Application pending·0 cites
- 3830US2011284971A1Semiconductor device and manufacturing method thereofSAKASHITA SHINSUKE·Filed 2011·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →