Inventor · disambiguated record
Yunpeng Yin
Also filed as: YIN YUNPENG
84 granted patents·12 pending applications·548 citations·filing 2010–2021
99Inventor score
Top patents by PatentIndex Score
96 records- 0197US9716038B2Critical dimension shrink through selective metal growth on metal hardmask sidewallsIBM·Filed 2016·Granted Jul 25, 2017·12 cites·1 claims
- 0297US8298943B1Self aligning via patterningARNOLD JOHN CHRISTOPHER·Filed 2011·Granted Oct 30, 2012·72 cites·9 claims
- 0396US9209178B2finFET isolation by selective cyclic etchIBM·Filed 2013·Granted Dec 8, 2015·26 cites·11 claims
- 0496US8298954B1Sidewall image transfer process employing a cap material layer for a metal nitride layerARNOLD JOHN C·Filed 2011·Granted Oct 30, 2012·29 cites·20 claims
- 0596US8119531B1Mask and etch process for pattern assemblyARNOLD JOHN C·Filed 2011·Granted Feb 21, 2012·30 cites·20 claims
- 0695US9324830B2Self-aligned contact process enabled by low temperatureIBM·Filed 2014·Granted Apr 26, 2016·12 cites·19 claims
- 0795US9257334B2Double self-aligned via patterningIBM·Filed 2015·Granted Feb 9, 2016·13 cites·7 claims
- 0895US9219007B2Double self aligned via patterningIBM·Filed 2013·Granted Dec 22, 2015·24 cites·14 claims
- 0995US9059257B2Self-aligned vias formed using sacrificial metal capsIBM·Filed 2013·Granted Jun 16, 2015·20 cites·13 claims
- 1095US8916337B2Dual hard mask lithography processARNOLD JOHN C·Filed 2012·Granted Dec 23, 2014·21 cites·25 claims
- 1194US9595473B2Critical dimension shrink through selective metal growth on metal hardmask sidewallsIBM·Filed 2015·Granted Mar 14, 2017·7 cites·15 claims
- 1294US9252022B1Patterning assist feature to mitigate reactive ion etch microloading effectIBM·Filed 2014·Granted Feb 2, 2016·17 cites·19 claims
- 1394US9093326B2Electrically isolated SiGe fin formation by local oxidationIBM·Filed 2013·Granted Jul 28, 2015·14 cites·18 claims
- 1494US9064813B2Trench patterning with block first sidewall image transferIBM·Filed 2013·Granted Jun 23, 2015·14 cites·17 claims
- 1593US8883649B2Sidewall image transfer processYIN YUNPENG·Filed 2011·Granted Nov 11, 2014·27 cites·21 claims
- 1693US8859433B2DSA grapho-epitaxy process with etch stop materialIBM·Filed 2013·Granted Oct 14, 2014·21 cites·25 claims
- 1792US8986921B2Lithographic material stack including a metal-compound hard maskIBM·Filed 2013·Granted Mar 24, 2015·11 cites·18 claims
- 1892US8951850B1FinFET formed over dielectricIBM·Filed 2013·Granted Feb 10, 2015·11 cites·15 claims
- 1992US8835305B2Method of fabricating a profile control in interconnect structuresYANG CHIH-CHAO·Filed 2012·Granted Sep 16, 2014·12 cites·13 claims
- 2092US8518824B2Self aligning via patterningARNOLD JOHN CHRISTOPHER·Filed 2012·Granted Aug 27, 2013·13 cites·10 claims
- 2192US8470711B2Tone inversion with partial underlayer etch for semiconductor device formationARNOLD JOHN C·Filed 2010·Granted Jun 25, 2013·11 cites·12 claims
- 2291US9953916B2Critical dimension shrink through selective metal growth on metal hardmask sidewallsIBM·Filed 2017·Granted Apr 24, 2018·4 cites·20 claims
- 2391US9634117B2Self-aligned contact process enabled by low temperatureIBM·Filed 2016·Granted Apr 25, 2017·5 cites·20 claims
- 2491US9515089B1Bulk fin formation with vertical fin sidewall profileIBM·Filed 2015·Granted Dec 6, 2016·6 cites·12 claims
- 2590US10037944B2Self-aligned contact process enabled by low temperatureIBM·Filed 2017·Granted Jul 31, 2018·4 cites·20 claims
- 2690US9252243B2Gate structure integration scheme for fin field effect transistorsIBM·Filed 2014·Granted Feb 2, 2016·7 cites·15 claims
- 2790US9099401B2Sidewall image transfer with a spin-on hardmaskIBM·Filed 2013·Granted Aug 4, 2015·8 cites·4 claims
- 2890US9041094B2Finfet formed over dielectricIBM·Filed 2013·Granted May 26, 2015·9 cites·15 claims
- 2990US8586478B2Method of making a semiconductor deviceSODA EIICHI·Filed 2012·Granted Nov 19, 2013·14 cites·13 claims
- 3087US9064901B1Fin density control of multigate devices through sidewall image transfer processesIBM·Filed 2013·Granted Jun 23, 2015·5 cites·17 claims
- 3186US9627263B1Stop layer through ion implantation for etch stopIBM·Filed 2015·Granted Apr 18, 2017·4 cites·6 claims
- 3286US9406746B2Work function metal fill for replacement gate fin field effect transistor processIBM·Filed 2014·Granted Aug 2, 2016·5 cites·15 claims
- 3386US9059002B2Non-merged epitaxially grown MOSFET devicesIBM·Filed 2013·Granted Jun 16, 2015·4 cites·15 claims
- 3485US10168075B2Critical dimension shrink through selective metal growth on metal hardmask sidewallsIBM·Filed 2018·Granted Jan 1, 2019·2 cites·20 claims
- 3585US8901711B1Horizontal metal-insulator-metal capacitorIBM·Filed 2013·Granted Dec 2, 2014·7 cites·19 claims
- 3684US9768276B2Method and structure of forming FinFET electrical fuse structureIBM·Filed 2015·Granted Sep 19, 2017·3 cites·12 claims
- 3783US8872244B1Contact structure employing a self-aligned gate capIBM·Filed 2013·Granted Oct 28, 2014·5 cites·9 claims
- 3881US9728419B2Fin density control of multigate devices through sidewall image transfer processesIBM·Filed 2015·Granted Aug 8, 2017·2 cites·20 claims
- 3980US9330965B2Double self aligned via patterningIBM·Filed 2015·Granted May 3, 2016·2 cites·16 claims
- 4079US8957478B2Semiconductor device including source/drain formed on bulk and gate channel formed on oxide layerIBM·Filed 2013·Granted Feb 17, 2015·4 cites·3 claims
- 4179US8586482B2Film stack including metal hardmask layer for sidewall image transfer fin field effect transistor formationARNOLD JOHN C·Filed 2011·Granted Nov 19, 2013·4 cites·20 claims
- 4278US9379218B2Fin formation in fin field effect transistorsIBM·Filed 2014·Granted Jun 28, 2016·2 cites·6 claims
- 4378US8735283B2Method for forming small dimension openings in the organic masking layer of tri-layer lithographyARNOLD JOHN C·Filed 2011·Granted May 27, 2014·4 cites·33 claims
- 4478US8580692B2Film stack including metal hardmask layer for sidewall image transfer fin field effect transistor formationARNOLD JOHN C·Filed 2011·Granted Nov 12, 2013·4 cites·18 claims
- 4577US9053965B2Partially isolated Fin-shaped field effect transistorsIBM·Filed 2013·Granted Jun 9, 2015·3 cites·9 claims
- 4674US9558999B2Ultra-thin metal wires formed through selective depositionGLOBALFOUNDRIES INC·Filed 2013·Granted Jan 31, 2017·3 cites·9 claims
- 4774US9293345B2Sidewall image transfer with a spin-on hardmaskGLOBALFOUNDRIES INC·Filed 2013·Granted Mar 22, 2016·2 cites·16 claims
- 4871US9105641B2Profile control in interconnect structuresIBM·Filed 2014·Granted Aug 11, 2015·2 cites·12 claims
- 4971US8796812B2Self-aligned trench over finTSENG CHIAHSUN·Filed 2012·Granted Aug 5, 2014·2 cites·20 claims
- 5067US9508713B2Densely spaced fins for semiconductor fin field effect transistorsIBM·Filed 2014·Granted Nov 29, 2016·1 cites·10 claims
Showing the top 50 of 96 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →