Inventor · disambiguated record
Jeng-Bang Yau
Also filed as: YAU JENG-BANG
133 granted patents·12 pending applications·628 citations·filing 2004–2023
99Inventor score
Top patents by PatentIndex Score
145 records- 0199US9536788B1Complementary SOI lateral bipolar transistors with backplate biasIBM·Filed 2015·Granted Jan 3, 2017·44 cites·10 claims
- 0298US10468503B1Stacked vertical transport field effect transistor electrically erasable programmable read only memory (EEPROM) devicesIBM·Filed 2018·Granted Nov 5, 2019·14 cites·7 claims
- 0397US10056379B1Low voltage (power) junction FET with all-around junction gateIBM·Filed 2017·Granted Aug 21, 2018·13 cites·13 claims
- 0497US9318585B1Semiconductor-on-insulator (SOI) lateral heterojunction bipolar transistor having a wide band gap emitter/collector which are epitaxially grownIBM·Filed 2015·Granted Apr 19, 2016·30 cites·6 claims
- 0597US8980667B2Charge sensors using inverted lateral bipolar junction transistorsCAI JIN·Filed 2012·Granted Mar 17, 2015·18 cites·14 claims
- 0696US10991711B2Stacked-nanosheet semiconductor structuresIBM·Filed 2019·Granted Apr 27, 2021·11 cites·16 claims
- 0796US10283516B1Stacked nanosheet field effect transistor floating-gate EEPROM cell and arrayIBM·Filed 2018·Granted May 7, 2019·16 cites·20 claims
- 0896US9799756B1Germanium lateral bipolar transistor with silicon passivationIBM·Filed 2016·Granted Oct 24, 2017·11 cites·10 claims
- 0996US9726631B1Ultra-sensitive biosensor based on lateral bipolar junction transistor having self-aligned epitaxially grown baseIBM·Filed 2016·Granted Aug 8, 2017·12 cites·20 claims
- 1096US9437718B1Semiconductor-on-insulator (SOI) lateral heterojunction bipolar transistor having a wide band gap emitter/collector which are epitaxially grownIBM·Filed 2015·Granted Sep 6, 2016·16 cites·14 claims
- 1195US9679967B1Contact resistance reduction by III-V Ga deficient surfaceIBM·Filed 2016·Granted Jun 13, 2017·10 cites·19 claims
- 1295US9625409B1Ultra-sensitive biosensor based on lateral bipolar junction transistor having self-aligned epitaxially grown baseIBM·Filed 2016·Granted Apr 18, 2017·11 cites·20 claims
- 1395US9431301B1Nanowire field effect transistor (FET) and method for fabricating the sameIBM·Filed 2015·Granted Aug 30, 2016·11 cites·14 claims
- 1495US8030145B2Back-gated fully depleted SOI transistorIBM·Filed 2010·Granted Oct 4, 2011·23 cites·21 claims
- 1594US9947649B1Large area electrostatic dischage for vertical transistor structuresIBM·Filed 2017·Granted Apr 17, 2018·10 cites·20 claims
- 1694US9852938B1Passivated germanium-on-insulator lateral bipolar transistorsIBM·Filed 2016·Granted Dec 26, 2017·9 cites·19 claims
- 1794US9502504B2SOI lateral bipolar transistors having surrounding extrinsic base portionsIBM·Filed 2013·Granted Nov 22, 2016·20 cites·20 claims
- 1894US9064776B2Radiation hardened transistors based on graphene and carbon nanotubesIBM·Filed 2013·Granted Jun 23, 2015·12 cites·7 claims
- 1994US8546246B2Radiation hardened transistors based on graphene and carbon nanotubesLIN YU-MING·Filed 2011·Granted Oct 1, 2013·14 cites·11 claims
- 2094US8080805B2FET radiation monitorGORDON MICHAEL·Filed 2010·Granted Dec 20, 2011·16 cites·35 claims
- 2193US10483368B1Single crystalline extrinsic bases for bipolar junction structuresIBM·Filed 2018·Granted Nov 19, 2019·6 cites·18 claims
- 2293US8105928B2Graphene based switching device having a tunable bandgapLIN YU-MING·Filed 2009·Granted Jan 31, 2012·20 cites·9 claims
- 2392US10879202B1System and method for forming solder bumpsIBM·Filed 2019·Granted Dec 29, 2020·6 cites·15 claims
- 2491US9997619B1Bipolar junction transistors and methods forming sameIBM·Filed 2017·Granted Jun 12, 2018·7 cites·23 claims
- 2591US9496347B1Graded buffer epitaxy in aspect ratio trappingIBM·Filed 2015·Granted Nov 15, 2016·7 cites·20 claims
- 2691US8803131B2Metal-free integrated circuits comprising graphene and carbon nanotubesLIN YU-MING·Filed 2012·Granted Aug 12, 2014·11 cites·7 claims
- 2791US8673703B2Fabrication of graphene nanoelectronic devices on SOI structuresLIN YU-MING·Filed 2009·Granted Mar 18, 2014·17 cites·19 claims
- 2890US11101219B2Low resistance contacts including intermetallic alloy of nickel, platinum, titanium, aluminum and type IV semiconductor elementsIBM·Filed 2019·Granted Aug 24, 2021·3 cites·18 claims
- 2990US10741645B2Thin-base high frequency lateral bipolar junction transistorIBM·Filed 2018·Granted Aug 11, 2020·5 cites·11 claims
- 3090US10269714B2Low resistance contacts including intermetallic alloy of nickel, platinum, titanium, aluminum and type IV semiconductor elementsIBM·Filed 2016·Granted Apr 23, 2019·4 cites·9 claims
- 3190US9929258B1Method of junction control for lateral bipolar junction transistorIBM·Filed 2016·Granted Mar 27, 2018·5 cites·8 claims
- 3289US10985105B2Low resistance contacts including intermetallic alloy of nickel, platinum, titanium, aluminum and type IV semiconductor elementsIBM·Filed 2018·Granted Apr 20, 2021·3 cites·18 claims
- 3389US10707336B1High-performance lateral BJT with epitaxial lightly doped intrinsic baseIBM·Filed 2019·Granted Jul 7, 2020·5 cites·20 claims
- 3489US9548355B1Compound finFET device including oxidized III-V fin isolatorIBM·Filed 2015·Granted Jan 17, 2017·5 cites·5 claims
- 3589US8455861B2Graphene based switching device having a tunable bandgapLIN YU-MING·Filed 2012·Granted Jun 4, 2013·8 cites·6 claims
- 3688US9887278B2Semiconductor-on-insulator lateral heterojunction bipolar transistor having epitaxially grown intrinsic base and deposited extrinsic baseIBM·Filed 2015·Granted Feb 6, 2018·5 cites·10 claims
- 3788US9659655B1Memory arrays using common floating gate series devicesIBM·Filed 2016·Granted May 23, 2017·8 cites·11 claims
- 3888US9331097B2High speed bipolar junction transistor for high voltage applicationsIBM·Filed 2014·Granted May 3, 2016·9 cites·15 claims
- 3988US9059195B2Lateral bipolar transistors having partially-depleted intrinsic baseIBM·Filed 2013·Granted Jun 16, 2015·6 cites·10 claims
- 4088US8361829B1On-chip radiation dosimeterIBM·Filed 2011·Granted Jan 29, 2013·8 cites·13 claims
- 4187US9659979B2Sensors including complementary lateral bipolar junction transistorsIBM·Filed 2015·Granted May 23, 2017·4 cites·16 claims
- 4287US8796668B2Metal-free integrated circuits comprising graphene and carbon nanotubesLIN YU-MING·Filed 2009·Granted Aug 5, 2014·12 cites·7 claims
- 4385US9564429B2Lateral bipolar sensor with sensing signal amplificationIBM·Filed 2015·Granted Feb 7, 2017·5 cites·18 claims
- 4484US9887264B2Nanowire field effect transistor (FET) and method for fabricating the sameIBM·Filed 2016·Granted Feb 6, 2018·3 cites·17 claims
- 4584US7767546B1Low cost fabrication of double box back gate silicon-on-insulator wafers with built-in shallow trench isolation in back gate layerIBM·Filed 2009·Granted Aug 3, 2010·12 cites·22 claims
- 4683US10916629B2Nanosheet-CMOS EPROM device with epitaxial oxide charge storage regionIBM·Filed 2018·Granted Feb 9, 2021·3 cites·9 claims
- 4783US10312151B1Monolithic co-integration of MOSFET and JFET for neuromorphic/cognitive circuit applicationsIBM·Filed 2017·Granted Jun 4, 2019·3 cites·10 claims
- 4883US10079228B1Tight integrated vertical transistor dual diode structure for electrostatic discharge circuit protectorIBM·Filed 2017·Granted Sep 18, 2018·3 cites·20 claims
- 4983US9040929B2Charge sensors using inverted lateral bipolar junction transistorsCAI JIN·Filed 2012·Granted May 26, 2015·4 cites·17 claims
- 5082US10573648B2Low voltage (power) junction FET with all-around junction gateIBM·Filed 2018·Granted Feb 25, 2020·2 cites·12 claims
Showing the top 50 of 145 patent records by PatentIndex Score.
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