Inventor · disambiguated record
Kiyokazu Nagahara
Also filed as: NAGAHARA KIYOKAZU
51 granted patents·3 pending applications·612 citations·filing 1997–2014
98Inventor score
Top patents by PatentIndex Score
54 records- 0193US6624987B1Magnetic head with a tunnel junction including metallic material sandwiched between one of an oxide and a nitride of the metallic materialNEC CORP·Filed 2000·Granted Sep 23, 2003·41 cites·3 claims
- 0293US6538861B1Magnetoresistive head having ferromagnetic tunnel junction film with a smaller resistance at a terminal portion than a central portion, magnetic resistance detection system with the magnetoresistive head and a magnetic storage system using itNEC CORP·Filed 2000·Granted Mar 25, 2003·44 cites·33 claims
- 0390US8040724B2Magnetic domain wall random access memoryNEC CORP·Filed 2008·Granted Oct 18, 2011·22 cites·15 claims
- 0489US8379429B2Domain wall motion element and magnetic random access memoryNEC CORP·Filed 2009·Granted Feb 19, 2013·20 cites·15 claims
- 0588US8830735B2Magnetic memory including memory cells incorporating data recording layer with perpendicular magnetic anisotropy filmKARIYADA EIJI·Filed 2011·Granted Sep 9, 2014·10 cites·5 claims
- 0688US6999287B2Magneto-resistance effect element, magneto-resistance effect head, magneto-resistance transducer system, and magnetic storage systemNEC CORP·Filed 2004·Granted Feb 14, 2006·21 cites·11 claims
- 0787US8503222B2Non-volatile logic circuitSUZUKI TETSUHIRO·Filed 2010·Granted Aug 6, 2013·11 cites·28 claims
- 0887US8120127B2Magnetic random access memory and method of manufacturing the sameNAGAHARA KIYOKAZU·Filed 2008·Granted Feb 21, 2012·19 cites·9 claims
- 0985US8154913B2Magnetoresistance effect element and magnetic random access memoryFUKAMI SHUNSUKE·Filed 2008·Granted Apr 10, 2012·11 cites·20 claims
- 1084US7161774B2Magneto-resistance effect element, magneto-resistance effect head, magneto-resistance transducer system, and magnetic storage systemNEC CORP·Filed 2006·Granted Jan 9, 2007·7 cites·5 claims
- 1182US7369375B2Magneto-resistance effect element and magneto-resistance effect headNEC CORP·Filed 2006·Granted May 6, 2008·6 cites·15 claims
- 1282US6903908B2Magnetoresistive effect sensor with barrier layer smoothed by composition of lower shield layerNEC CORP·Filed 2001·Granted Jun 7, 2005·16 cites·7 claims
- 1382US6515379B1Power supply apparatus, method, and electronic apparatusSONY CORP·Filed 2000·Granted Feb 4, 2003·37 cites·12 claims
- 1481US8559214B2Magnetic memory device and magnetic random access memoryFUKAMI SHUNSUKE·Filed 2009·Granted Oct 15, 2013·12 cites·23 claims
- 1581US6798626B2Magnetoresistive effect element having a ferromagnetic tunnel junction film with an oxide or nitride of a metallic materialNEC CORP·Filed 2003·Granted Sep 28, 2004·13 cites·3 claims
- 1681US6747853B2Magneto-resistance effect element, magneto-resistance effect head, magneto-resistance transducer system, and magnetic storage systemNEC CORP·Filed 2003·Granted Jun 8, 2004·13 cites·5 claims
- 1780US8194436B2Magnetic random access memory, write method therefor, and magnetoresistance effect elementFUKAMI SHUNSUKE·Filed 2008·Granted Jun 5, 2012·8 cites·17 claims
- 1880US6718621B1Magnetoresistive head production methodNEC CORP·Filed 2000·Granted Apr 13, 2004·15 cites·12 claims
- 1980US6418038B2Complex resonant DC-DC converter and high voltage generating circuit driven in a plurality of frequency regionsSONY CORP·Filed 2001·Granted Jul 9, 2002·47 cites·7 claims
- 2078US8174873B2Magnetic random access memory and initializing method for the sameSUZUKI TETSUHIRO·Filed 2008·Granted May 8, 2012·11 cites·13 claims
- 2178US6934132B2Magneto-resistance effect element, magneto-resistance effect head, magneto-resistance transducer system, and magnetic storage systemNEC CORP·Filed 2001·Granted Aug 23, 2005·12 cites·5 claims
- 2276US8120950B2Semiconductor deviceFUKAMI SHUNSUKE·Filed 2009·Granted Feb 21, 2012·10 cites·14 claims
- 2375US8481339B2Magnetic memory and manufacturing method thereofNAGAHARA KIYOKAZU·Filed 2012·Granted Jul 9, 2013·4 cites·7 claims
- 2473US8174086B2Magnetoresistive element, and magnetic random access memoryFUKAMI SHUNSUKE·Filed 2008·Granted May 8, 2012·8 cites·14 claims
- 2572US8687414B2Magnetic memory element and magnetic random access memoryNAGAHARA KIYOKAZU·Filed 2009·Granted Apr 1, 2014·8 cites·18 claims
- 2670US8791534B2Magnetic memory device and magnetic memoryFUKAMI SHUNSUKE·Filed 2011·Granted Jul 29, 2014·4 cites·14 claims
- 2770US8592930B2Magnetic memory element, magnetic memory and initializing methodFUKAMI SHUNSUKE·Filed 2010·Granted Nov 26, 2013·4 cites·20 claims
- 2867US6055137AMagnetoresistive effect composite head with configured pole tipNEC CORP·Filed 1997·Granted Apr 25, 2000·20 cites·3 claims
- 2967US5938941AMagnetoresistance effect composite head and method of forming the sameNEC CORP·Filed 1998·Granted Aug 17, 1999·19 cites·15 claims
- 3066US8159872B2Magnetic random access memoryFUKAMI SHUNSUKE·Filed 2009·Granted Apr 17, 2012·8 cites·14 claims
- 3166US7298596B2Magneto-resistance effect element, magneto-resistance effect head, magneto-resistance transducer system, and magnetic storage systemNEC CORP·Filed 2006·Granted Nov 20, 2007·2 cites·7 claims
- 3266US7265949B2Magneto-resistance effect element, magneto-resistance effect head, magneto-resistance transducer system, and magnetic storage systemNEC CORP·Filed 2006·Granted Sep 4, 2007·2 cites·7 claims
- 3366US6154345AMagnetoresistive effect composite headNEC CORP·Filed 1998·Granted Nov 28, 2000·20 cites·41 claims
- 3465US8363461B2Magnetic random access memory, method of initializing magnetic random access memory and method of writing magnetic random access memoryNEC CORP·Filed 2009·Granted Jan 29, 2013·5 cites·20 claims
- 3565US6125009AMagnetoresistive effect composite head having a pole containing Co-MNEC CORP·Filed 1997·Granted Sep 26, 2000·16 cites·7 claims
- 3663US8625327B2Magnetic random access memory and initializing method for the sameSUZUKI TETSUHIRO·Filed 2009·Granted Jan 7, 2014·3 cites·8 claims
- 3763US8514616B2Magnetic memory element and magnetic memoryISHIWATA NOBUYUKI·Filed 2010·Granted Aug 20, 2013·3 cites·18 claims
- 3863US5959857APower supply apparatus for producing a constant DC voltage from a range of AC inputsSONY CORP·Filed 1997·Granted Sep 28, 1999·30 cites·6 claims
- 3962US8884388B2Magnetic memory element, magnetic memory and manufacturing method of magnetic memoryFUKAMI SHUNSUKE·Filed 2011·Granted Nov 11, 2014·1 cites·15 claims
- 4060US8149615B2Magnetic random access memoryFUKAMI SHUNSUKE·Filed 2009·Granted Apr 3, 2012·4 cites·10 claims
- 4160US6433969B1Compound magnetoresistive head and method for manufacturing sameNEC CORP·Filed 2000·Granted Aug 13, 2002·4 cites·2 claims
- 4259US6343025B1Switching converter for generating a driving signalSONY CORP·Filed 2000·Granted Jan 29, 2002·14 cites·3 claims
- 4357US6449172B2Switching power supply with nonlinear characteristics at start upSONY CORP·Filed 2000·Granted Sep 10, 2002·13 cites·5 claims
- 4452US8994130B2Magnetic memory element and magnetic memoryFUKAMI SHUNSUKE·Filed 2010·Granted Mar 31, 2015·1 cites·16 claims
- 4550US2014346518A1Magnetic memory including memory cells incorporating data recording layer with perpendicular magnetic anisotropy filmRENESAS ELECTRONICS CORP·Filed 2014·Application pending·0 cites
- 4648US8787076B2Magnetic memory and method of manufacturing the sameFUKAMI SHUNSUKE·Filed 2009·Granted Jul 22, 2014·1 cites·11 claims
- 4747US8565011B2Method of initializing magnetic memory elementFUKAMI SHUNSUKE·Filed 2009·Granted Oct 22, 2013·1 cites·15 claims
- 4847US7158355B2Magneto-resistance effect element, magneto-resistance effect head, magneto-resistance transducer system, and magnetic storage systemNEC CORP·Filed 2005·Granted Jan 2, 2007·0 cites·4 claims
- 4943US6267824B1Method for manufacturing a magnetoresistive effect composite having a pole containing Co-MNEC CORP·Filed 1999·Granted Jul 31, 2001·5 cites·10 claims
- 5041US6057991AThin film magnetic head with an improved surface to reduce the occurrence of head crashNEC CORP·Filed 1997·Granted May 2, 2000·4 cites·6 claims
Showing the top 50 of 54 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →