Inventor · disambiguated record
Hung-Mo Yang
Also filed as: YANG HUNG-MO
13 granted patents·1 pending application·127 citations·filing 1995–2017
92Inventor score
Top patents by PatentIndex Score
14 records- 0196US7217623B2Fin FET and method of fabricating sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted May 15, 2007·41 cites·14 claims
- 0292US7868380B2Fin FET and method of fabricating sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jan 11, 2011·12 cites·12 claims
- 0391US8264034B2Fin FET and method of fabricating sameKIM KEUN-NAM·Filed 2011·Granted Sep 11, 2012·9 cites·29 claims
- 0484US8053833B2Fin FET and method of fabricating sameSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Nov 8, 2011·5 cites·4 claims
- 0582US7494895B2Method of fabricating a three-dimensional MOSFET employing a hard mask spacerSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Feb 24, 2009·8 cites·21 claims
- 0673US7436047B2Wafer having scribe lanes suitable for sawing process, reticle used in manufacturing the same, and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Oct 14, 2008·3 cites·8 claims
- 0771US6365928B1Semiconductor memory storage electrode and method of makingSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Apr 2, 2002·20 cites·5 claims
- 0863US9893190B2Fin FET and method of fabricating sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Feb 13, 2018·0 cites·20 claims
- 0961US9640665B2Fin FET and method of fabricating sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted May 2, 2017·0 cites·10 claims
- 1060US9196733B2Fin FET and method of fabricating sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Nov 24, 2015·0 cites·20 claims
- 1157US9018697B2fin FET and method of fabricating sameKIM KEUN-NAM·Filed 2012·Granted Apr 28, 2015·0 cites·15 claims
- 1253US2009081566A1Wafer having scribe lanes suitable for sawing process, reticle used in manufacturing the same, and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 1349US5786265AMethods of forming integrated semiconductor devices having improved channel-stop regions therein, and devices formed therebySAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Jul 28, 1998·19 cites·8 claims
- 1439US5523255AMethod for forming a device isolation film of a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 1995·Granted Jun 4, 1996·10 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →