Inventor · disambiguated record
Joelle Sharp
Also filed as: SHARP JOELLE
9 granted patents·3 pending applications·114 citations·filing 1999–2012
88Inventor score
Top patents by PatentIndex Score
12 records- 0190US7553740B2Structure and method for forming a minimum pitch trench-gate FET with heavy body regionFAIRCHILD SEMICONDUCTOR·Filed 2005·Granted Jun 30, 2009·19 cites·32 claims
- 0279US6391699B1Method of manufacturing a trench MOSFET using selective growth epitaxyFAIRCHILD SEMICONDUCTOR·Filed 2000·Granted May 21, 2002·24 cites·13 claims
- 0373US8039401B2Structure and method for forming hybrid substrateFAIRCHILD SEMICONDUCTOR·Filed 2008·Granted Oct 18, 2011·4 cites·18 claims
- 0470US6291310B1Method of increasing trench density for semiconductorFAIRFIELD SEMICONDUCTOR CORP·Filed 1999·Granted Sep 18, 2001·35 cites·12 claims
- 0560US8237195B2Power MOSFET having a strained channel in a semiconductor heterostructure on metal substrateNGAI TAT·Filed 2008·Granted Aug 7, 2012·2 cites·22 claims
- 0659US6825087B1Hydrogen anneal for creating an enhanced trench for trench MOSFETSFAIRCHILD SEMICONDUCTOR·Filed 1999·Granted Nov 30, 2004·23 cites·18 claims
- 0757US7564096B2Scalable power field effect transistor with improved heavy body structure and method of manufactureFAIRCHILD SEMICONDUCTOR·Filed 2007·Granted Jul 21, 2009·1 cites·38 claims
- 0855US6576954B2Trench MOSFET formed using selective epitaxial growthFAIRCHILD SEMICONDUCTOR·Filed 2002·Granted Jun 10, 2003·6 cites·7 claims
- 0952US7754567B2Scalable power field effect transistor with improved heavy body structure and method of manufactureFAIRCHILD SEMICONDUCTOR·Filed 2009·Granted Jul 13, 2010·0 cites·35 claims
- 1041US2012196414A1Power MOSFET Having a Strained Channel in a Semiconductor Heterostructure on Metal SubstrateNGAI TAT·Filed 2012·Application pending·0 cites
- 1140US2008199995A1Integrated Hydrogen Anneal and Gate Oxidation for Improved Gate Oxide IntegrityWOOLSEY DEBRA SUSAN·Filed 2007·Application pending·0 cites
- 1237US2001034109A1Trench seimconductor devices reduced trench pitchFiled 2001·Application pending·0 cites
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