Inventor · disambiguated record
James S. Dunn
Also filed as: DUNN JAMES · DUNN JAMES S · DUNN JAMES STUART
71 granted patents·3 pending applications·901 citations·filing 1988–2016
99Inventor score
Top patents by PatentIndex Score
74 records- 0196US8722508B2Low harmonic RF switch in SOIIBM·Filed 2013·Granted May 13, 2014·23 cites·18 claims
- 0296US8674472B2Low harmonic RF switch in SOIBOTULA ALAN B·Filed 2010·Granted Mar 18, 2014·25 cites·19 claims
- 0395US6900519B2Diffused extrinsic base and method for fabricationIBM·Filed 2004·Granted May 31, 2005·95 cites·17 claims
- 0492US9646993B2Single-chip field effect transistor (FET) switch with silicon germanium (SiGe) power amplifier and methods of formingIBM·Filed 2015·Granted May 9, 2017·7 cites·8 claims
- 0592US7262484B2Structure and method for performance improvement in vertical bipolar transistorsIBM·Filed 2005·Granted Aug 28, 2007·17 cites·10 claims
- 0691US9355972B2Method for making a dielectric region in a bulk silicon substrate providing a high-Q passive resonatorIBM·Filed 2014·Granted May 31, 2016·8 cites·20 claims
- 0791US9355936B2Flattened substrate surface for substrate bondingGLOBALFOUNDRIES INC·Filed 2014·Granted May 31, 2016·16 cites·20 claims
- 0889US7303968B2Semiconductor device and method having multiple subcollectors formed on a common waferIBM·Filed 2005·Granted Dec 4, 2007·13 cites·4 claims
- 0989US6521506B1Varactors for CMOS and BiCMOS technologiesIBM·Filed 2001·Granted Feb 18, 2003·41 cites·11 claims
- 1088US8375539B2Method of manufacturing complimentary metal-insulator-metal (MIM) capacitorsIBM·Filed 2009·Granted Feb 19, 2013·13 cites·13 claims
- 1188US7253096B2Bipolar transistor having raised extrinsic base with selectable self-alignment and methods of forming sameIBM·Filed 2005·Granted Aug 7, 2007·11 cites·7 claims
- 1287US7776704B2Method to build self-aligned NPN in advanced BiCMOS technologyIBM·Filed 2007·Granted Aug 17, 2010·12 cites·23 claims
- 1386US9653477B2Single-chip field effect transistor (FET) switch with silicon germanium (SiGe) power amplifier and methods of formingIBM·Filed 2014·Granted May 16, 2017·6 cites·14 claims
- 1486US6426265B1Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technologyIBM·Filed 2001·Granted Jul 30, 2002·25 cites·23 claims
- 1585US8191217B2Complimentary metal-insulator-metal (MIM) capacitors and method of manufactureDUNN JAMES S·Filed 2009·Granted Jun 5, 2012·11 cites·8 claims
- 1684US6812545B2Epitaxial base bipolar transistor with raised extrinsic baseIBM·Filed 2003·Granted Nov 2, 2004·28 cites·7 claims
- 1782US5981148AMethod for forming sidewall spacers using frequency doubling hybrid resist and device formed therebyIBM·Filed 1997·Granted Nov 9, 1999·49 cites·27 claims
- 1881US6809024B1Method to fabricate high-performance NPN transistors in a BiCMOS processIBM·Filed 2003·Granted Oct 26, 2004·24 cites·11 claims
- 1980US8735986B2Forming structures on resistive substratesBOTULA ALAN B·Filed 2011·Granted May 27, 2014·4 cites·18 claims
- 2080US8649153B2Tapered via and MIM capacitorDUNN JAMES STUART·Filed 2011·Granted Feb 11, 2014·4 cites·6 claims
- 2178US8778737B2Flattened substrate surface for substrate bondingCOONEY III EDWARD C·Filed 2011·Granted Jul 15, 2014·4 cites·22 claims
- 2278US7002221B2Bipolar transistor having raised extrinsic base with selectable self-alignment and methods of forming sameIBM·Filed 2003·Granted Feb 21, 2006·17 cites·17 claims
- 2377US8956945B2Trench isolation for bipolar junction transistors in BiCMOS technologyIBM·Filed 2013·Granted Feb 17, 2015·3 cites·12 claims
- 2477US6906401B2Method to fabricate high-performance NPN transistors in a BiCMOS processIBM·Filed 2004·Granted Jun 14, 2005·19 cites·9 claims
- 2576US8692288B2Heterojunction bipolar transistors and methods of manufactureDUNN JAMES S·Filed 2012·Granted Apr 8, 2014·3 cites·17 claims
- 2676US6597050B1Method of contacting a silicide-based schottky diode and diode so formedIBM·Filed 2000·Granted Jul 22, 2003·19 cites·12 claims
- 2775US8857022B2Method of manufacturing complimentary metal-insulator-metal (MIM) capacitorsIBM·Filed 2012·Granted Oct 14, 2014·3 cites·8 claims
- 2875US7064416B2Semiconductor device and method having multiple subcollectors formed on a common waferIBM·Filed 2001·Granted Jun 20, 2006·16 cites·2 claims
- 2974US6891251B2Varactors for CMOS and BiCMOS technologiesIBM·Filed 2002·Granted May 10, 2005·16 cites·8 claims
- 3074US6507063B2Poly-poly/MOS capacitor having a gate encapsulating first electrode layerIBM·Filed 2000·Granted Jan 14, 2003·16 cites·26 claims
- 3173US7135375B2Varactors for CMOS and BiCMOS technologiesIBM·Filed 2005·Granted Nov 14, 2006·4 cites·9 claims
- 3273US5976768AMethod for forming sidewall spacers using frequency doubling hybrid resist and device formed therebyIBM·Filed 1998·Granted Nov 2, 1999·31 cites·7 claims
- 3372US6617220B2Method for fabricating an epitaxial base bipolar transistor with raised extrinsic baseIBM·Filed 2001·Granted Sep 9, 2003·15 cites·13 claims
- 3472US6258695B1Dislocation suppression by carbon incorporationIBM·Filed 1999·Granted Jul 10, 2001·50 cites·7 claims
- 3571US8842412B2Tapered via and MIM capacitorDUNN JAMES S·Filed 2014·Granted Sep 23, 2014·1 cites·7 claims
- 3671US6440811B1Method of fabricating a poly-poly capacitor with a SiGe BiCMOS integration schemeIBM·Filed 2000·Granted Aug 27, 2002·15 cites·18 claims
- 3769US6121122AMethod of contacting a silicide-based schottky diodeIBM·Filed 1999·Granted Sep 19, 2000·24 cites·7 claims
- 3868US6476483B1Method and apparatus for cooling a silicon on insulator deviceIBM·Filed 1999·Granted Nov 5, 2002·35 cites·10 claims
- 3967US6096618AMethod of making a Schottky diode with sub-minimum guard ringIBM·Filed 1998·Granted Aug 1, 2000·26 cites·29 claims
- 4066US7932155B2Structure and method for performance improvement in vertical bipolar transistorsIBM·Filed 2007·Granted Apr 26, 2011·2 cites·24 claims
- 4166US7898061B2Structure for performance improvement in vertical bipolar transistorsIBM·Filed 2007·Granted Mar 1, 2011·2 cites·18 claims
- 4266US7713829B2Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technologyIBM·Filed 2006·Granted May 11, 2010·1 cites·14 claims
- 4364US9105677B2Base profile of self-aligned bipolar transistors for power amplifier applicationsIBM·Filed 2013·Granted Aug 11, 2015·1 cites·20 claims
- 4464US7265018B2Method to build self-aligned NPN in advanced BiCMOS technologyIBM·Filed 2004·Granted Sep 4, 2007·9 cites·18 claims
- 4563US9424992B2Complimentary metal-insulator-metal (MIM) capacitors and method of manufactureDUNN JAMES S·Filed 2012·Granted Aug 23, 2016·1 cites·7 claims
- 4661US8603889B2Integrated circuit structure having air-gap trench isolation and related design structureCAMILLO-CASTILLO RENATA A·Filed 2012·Granted Dec 10, 2013·1 cites·9 claims
- 4760US6815802B2Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technologyIBM·Filed 2002·Granted Nov 9, 2004·5 cites·5 claims
- 4858US9337323B2Trench isolation for bipolar junction transistors in BiCMOS technologyGLOBALFOUNDRIES INC·Filed 2014·Granted May 10, 2016·0 cites·9 claims
- 4958US4891020ALow profile metal shell electrical connectorTHOMAS & BETTS CORP·Filed 1988·Granted Jan 2, 1990·18 cites·6 claims
- 5056US9818688B2Dielectric region in a bulk silicon substrate providing a high-Q passive resonatorIBM·Filed 2015·Granted Nov 14, 2017·0 cites·17 claims
Showing the top 50 of 74 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →