Inventor · disambiguated record
Kelly P. Ip
Also filed as: IP KELLY P
11 granted patents·2 pending applications·46 citations·filing 2009–2022
86Inventor score
Top patents by PatentIndex Score
13 records- 0195US9478508B1Microwave integrated circuit (MMIC) damascene electrical interconnect for microwave energy transmissionRAYTHEON CO·Filed 2015·Granted Oct 25, 2016·19 cites·8 claims
- 0290US10224285B2Nitride structure having gold-free contact and methods for forming such structuresRAYTHEON CO·Filed 2017·Granted Mar 5, 2019·7 cites·4 claims
- 0390US10096550B2Nitride structure having gold-free contact and methods for forming such structuresRAYTHEON CO·Filed 2017·Granted Oct 9, 2018·7 cites·13 claims
- 0481US11515410B2Group III-V semiconductor structures having crystalline regrowth layers and methods for forming such structuresRAYTHEON CO·Filed 2020·Granted Nov 29, 2022·1 cites·16 claims
- 0576US11476154B2Field effect transistor having improved gate structuresRAYTHEON CO·Filed 2019·Granted Oct 18, 2022·2 cites·13 claims
- 0676US11177216B2Nitride structures having low capacitance gate contacts integrated with copper damascene structuresRAYTHEON CO·Filed 2018·Granted Nov 16, 2021·2 cites·34 claims
- 0775US9761445B2Methods and structures for forming microstrip transmission lines on thin silicon carbide on insulator (SICOI) wafersRAYTHEON CO·Filed 2016·Granted Sep 12, 2017·2 cites·12 claims
- 0873US8853745B2Silicon based opto-electric circuitsTABATABAIE KAMAL·Filed 2009·Granted Oct 7, 2014·6 cites·8 claims
- 0968US11784248B2Group III-V semiconductor structures having crystalline regrowth layers and methods for forming such structuresRAYTHEON CO·Filed 2022·Granted Oct 10, 2023·0 cites·16 claims
- 1058US11239326B2Electrode structure for field effect transistorRAYTHEON CO·Filed 2019·Granted Feb 1, 2022·0 cites·19 claims
- 1150US2019097001A1Electrode structure for field effect transistorRAYTHEON CO·Filed 2017·Application pending·0 cites
- 1241US2015084057A1Method and structure for reducing the propagation of cracks in epitaxial films formed on semiconductor wafersRAYTHEON CO·Filed 2013·Application pending·0 cites
- 1335US9293379B2Semiconductor structure with layers having different hydrogen contentsCHUMBES EDUARDO M·Filed 2009·Granted Mar 22, 2016·0 cites·8 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →